Epitaxial growth of ZnO nanowall networks on GaN/sapphire substrates

Sang Woo Kim; Hyun Kyu Park; Min Su Yi; Nae Man Park; Jong Hyurk Park; Sang Hyeob Kim; Sung Lyul Maeng; Chel Jong Choi; Seung Eon Moon

doi:10.1063/1.2430918

Epitaxial growth of ZnO nanowall networks on GaN/sapphire substrates

Sang Woo Kim, Hyun Kyu Park, Min Su Yi, Nae Man Park, Jong Hyurk Park, Sang Hyeob Kim, Sung Lyul Maeng, Chel Jong Choi, Seung Eon Moon

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Heteroepitaxy of vertically well-aligned ZnO nanowall networks with a honeycomblike pattern on GaNc- Al2 O3 substrates by the help of a Au catalyst was realized. The ZnO nanowall networks with wall thicknesses of 80-140 nm and an average height of about 2 μm were grown on a self-formed ZnO thin film during the growth on the GaNc- Al2 O3 substrates. It was found that both single-crystalline ZnO nanowalls and catalytic Au have an epitaxial relation to the GaN thin film in synchrotron x-ray scattering experiments. Hydrogen-sensing properties of the ZnO nanowall networks have also been investigated.

Original language	English
Article number	033107
Journal	Applied Physics Letters
Volume	90
Issue number	3
DOIs	https://doi.org/10.1063/1.2430918
Publication status	Published - 2007

Bibliographical note

Funding Information:
The authors thank D.-H. Lee and J.-M. Lee for their help in the growth of ZnO nanowall samples. This work was supported by the Ministry of Information and Communication (MIC), Republic of Korea, under Project No. A1100-0602-0101. Synchrotron x-ray scattering experiments at PLS were supported in part by the Ministry of Science and Technology (MOST) and POSTECH, Republic of Korea.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2430918

Cite this

@article{4150edbccf524e418c011c00a7c4ee72,

title = "Epitaxial growth of ZnO nanowall networks on GaN/sapphire substrates",

abstract = "Heteroepitaxy of vertically well-aligned ZnO nanowall networks with a honeycomblike pattern on GaNc- Al2 O3 substrates by the help of a Au catalyst was realized. The ZnO nanowall networks with wall thicknesses of 80-140 nm and an average height of about 2 μm were grown on a self-formed ZnO thin film during the growth on the GaNc- Al2 O3 substrates. It was found that both single-crystalline ZnO nanowalls and catalytic Au have an epitaxial relation to the GaN thin film in synchrotron x-ray scattering experiments. Hydrogen-sensing properties of the ZnO nanowall networks have also been investigated.",

author = "Kim, {Sang Woo} and Park, {Hyun Kyu} and Yi, {Min Su} and Park, {Nae Man} and Park, {Jong Hyurk} and Kim, {Sang Hyeob} and Maeng, {Sung Lyul} and Choi, {Chel Jong} and Moon, {Seung Eon}",

note = "Funding Information: The authors thank D.-H. Lee and J.-M. Lee for their help in the growth of ZnO nanowall samples. This work was supported by the Ministry of Information and Communication (MIC), Republic of Korea, under Project No. A1100-0602-0101. Synchrotron x-ray scattering experiments at PLS were supported in part by the Ministry of Science and Technology (MOST) and POSTECH, Republic of Korea.",

year = "2007",

doi = "10.1063/1.2430918",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "3",

}

TY - JOUR

T1 - Epitaxial growth of ZnO nanowall networks on GaN/sapphire substrates

AU - Kim, Sang Woo

AU - Park, Hyun Kyu

AU - Yi, Min Su

AU - Park, Nae Man

AU - Park, Jong Hyurk

AU - Kim, Sang Hyeob

AU - Maeng, Sung Lyul

AU - Choi, Chel Jong

AU - Moon, Seung Eon

N1 - Funding Information: The authors thank D.-H. Lee and J.-M. Lee for their help in the growth of ZnO nanowall samples. This work was supported by the Ministry of Information and Communication (MIC), Republic of Korea, under Project No. A1100-0602-0101. Synchrotron x-ray scattering experiments at PLS were supported in part by the Ministry of Science and Technology (MOST) and POSTECH, Republic of Korea.

PY - 2007

Y1 - 2007

N2 - Heteroepitaxy of vertically well-aligned ZnO nanowall networks with a honeycomblike pattern on GaNc- Al2 O3 substrates by the help of a Au catalyst was realized. The ZnO nanowall networks with wall thicknesses of 80-140 nm and an average height of about 2 μm were grown on a self-formed ZnO thin film during the growth on the GaNc- Al2 O3 substrates. It was found that both single-crystalline ZnO nanowalls and catalytic Au have an epitaxial relation to the GaN thin film in synchrotron x-ray scattering experiments. Hydrogen-sensing properties of the ZnO nanowall networks have also been investigated.

AB - Heteroepitaxy of vertically well-aligned ZnO nanowall networks with a honeycomblike pattern on GaNc- Al2 O3 substrates by the help of a Au catalyst was realized. The ZnO nanowall networks with wall thicknesses of 80-140 nm and an average height of about 2 μm were grown on a self-formed ZnO thin film during the growth on the GaNc- Al2 O3 substrates. It was found that both single-crystalline ZnO nanowalls and catalytic Au have an epitaxial relation to the GaN thin film in synchrotron x-ray scattering experiments. Hydrogen-sensing properties of the ZnO nanowall networks have also been investigated.

UR - http://www.scopus.com/inward/record.url?scp=33846456584&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846456584&partnerID=8YFLogxK

U2 - 10.1063/1.2430918

DO - 10.1063/1.2430918

M3 - Article

AN - SCOPUS:33846456584

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 033107

ER -

Epitaxial growth of ZnO nanowall networks on GaN/sapphire substrates

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this