Epitaxial TiN(001) Grown and Analyzed in situ by XPS and UPS. I. Analysis of As-deposited Layers

R. T. Haasch, T. Y. Lee, D. Gall, J. E. Greene, I. Petrov

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11 Citations (Scopus)

Abstract

X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS) were used to characterize as-deposited epitaxial TiN(001) layers grown in situ. The films were deposited by ultrahigh vacuum reactive magnetron sputtering on MgO(001) at 850 °C in pure N2 discharges maintained at a pressure of 5 mTorr (0.67 Pa). Mg Kα and monochromatic Al Kα x-ray sources were used to obtain the XPS spectra, while the UPS data was generated by He I and He II UV radiation. The spectra show that the TiN(001) surfaces are free of O and C. The films were found to be stoichiometric in agreement with Rutherford backscattering spectroscopy (RBS) results, yielding a N/Ti ratio of 1.02 ± 0.02.

Original languageEnglish
Pages (from-to)193-203
Number of pages11
JournalSurface Science Spectra
Volume7
Issue number3
DOIs
Publication statusPublished - 2000 Jul 1

Bibliographical note

Funding Information:
The authors gratefully acknowledge the financial support of the Department of Energy, under Contract No. DEFG02-96-ER45439 and the use of the facilities of the Center for Microanalysis of Materials, which is partially supported by DOE, at the University of Illinois.

Publisher Copyright:
© 2000 American Vacuum Society.

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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