Epitaxial VN(001) Grown and Analyzed in situ by XPS and UPS. I. Analysis of As-deposited Layers

R. T. Haasch; T. Y. Lee; D. Gall; J. E. Greene; I. Petrov

doi:10.1116/1.1367598

Epitaxial VN(001) Grown and Analyzed in situ by XPS and UPS. I. Analysis of As-deposited Layers

R. T. Haasch, T. Y. Lee, D. Gall, J. E. Greene, I. Petrov

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS) were used to characterize as-deposited epitaxial VN(001) layers grown in situ. The films were deposited on MgO(001) at 650 °C in pure N₂ discharges maintained at a pressure of 5 mTorr (0.67 Pa). Mg Kα and monochromatic Al Kα x-ray sources were used to generate the XPS spectra, while the UPS data were generated by He I and He II UV radiation. Analysis of the results show that the VN(001) surfaces are free of O and C. The films were found to be stoichiometric in agreement with Rutherford backscattering spectroscopy (RBS) results, yielding a N/V ratio of 1.06±0.02.

Original language	English
Pages (from-to)	221-232
Number of pages	12
Journal	Surface Science Spectra
Volume	7
Issue number	3
DOIs	https://doi.org/10.1116/1.1367598
Publication status	Published - 2000 Jul 1

Bibliographical note

Funding Information:
The authors gratefully acknowledge the financial support of the Department of Energy, under Contract No. DEFG02-96-ER45439 and the use of the facilities of the Center for Microanalysis of Materials, which is partially supported by DOE, at the University of Illinois.

Publisher Copyright:
© 2000 American Vacuum Society.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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@article{7d88a25fe6eb4b2695b4141530b839ca,

title = "Epitaxial VN(001) Grown and Analyzed in situ by XPS and UPS. I. Analysis of As-deposited Layers",

abstract = "X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS) were used to characterize as-deposited epitaxial VN(001) layers grown in situ. The films were deposited on MgO(001) at 650 °C in pure N2 discharges maintained at a pressure of 5 mTorr (0.67 Pa). Mg Kα and monochromatic Al Kα x-ray sources were used to generate the XPS spectra, while the UPS data were generated by He I and He II UV radiation. Analysis of the results show that the VN(001) surfaces are free of O and C. The films were found to be stoichiometric in agreement with Rutherford backscattering spectroscopy (RBS) results, yielding a N/V ratio of 1.06±0.02.",

author = "Haasch, {R. T.} and Lee, {T. Y.} and D. Gall and Greene, {J. E.} and I. Petrov",

note = "Funding Information: The authors gratefully acknowledge the financial support of the Department of Energy, under Contract No. DEFG02-96-ER45439 and the use of the facilities of the Center for Microanalysis of Materials, which is partially supported by DOE, at the University of Illinois. Publisher Copyright: {\textcopyright} 2000 American Vacuum Society.",

year = "2000",

month = jul,

day = "1",

doi = "10.1116/1.1367598",

language = "English",

volume = "7",

pages = "221--232",

journal = "Surface Science Spectra",

issn = "1055-5269",

publisher = "AVS Science and Technology Society",

number = "3",

}

TY - JOUR

T1 - Epitaxial VN(001) Grown and Analyzed in situ by XPS and UPS. I. Analysis of As-deposited Layers

AU - Haasch, R. T.

AU - Lee, T. Y.

AU - Gall, D.

AU - Greene, J. E.

AU - Petrov, I.

N1 - Funding Information: The authors gratefully acknowledge the financial support of the Department of Energy, under Contract No. DEFG02-96-ER45439 and the use of the facilities of the Center for Microanalysis of Materials, which is partially supported by DOE, at the University of Illinois. Publisher Copyright: © 2000 American Vacuum Society.

PY - 2000/7/1

Y1 - 2000/7/1

N2 - X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS) were used to characterize as-deposited epitaxial VN(001) layers grown in situ. The films were deposited on MgO(001) at 650 °C in pure N2 discharges maintained at a pressure of 5 mTorr (0.67 Pa). Mg Kα and monochromatic Al Kα x-ray sources were used to generate the XPS spectra, while the UPS data were generated by He I and He II UV radiation. Analysis of the results show that the VN(001) surfaces are free of O and C. The films were found to be stoichiometric in agreement with Rutherford backscattering spectroscopy (RBS) results, yielding a N/V ratio of 1.06±0.02.

AB - X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS) were used to characterize as-deposited epitaxial VN(001) layers grown in situ. The films were deposited on MgO(001) at 650 °C in pure N2 discharges maintained at a pressure of 5 mTorr (0.67 Pa). Mg Kα and monochromatic Al Kα x-ray sources were used to generate the XPS spectra, while the UPS data were generated by He I and He II UV radiation. Analysis of the results show that the VN(001) surfaces are free of O and C. The films were found to be stoichiometric in agreement with Rutherford backscattering spectroscopy (RBS) results, yielding a N/V ratio of 1.06±0.02.

UR - http://www.scopus.com/inward/record.url?scp=85116898218&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85116898218&partnerID=8YFLogxK

U2 - 10.1116/1.1367598

DO - 10.1116/1.1367598

M3 - Article

AN - SCOPUS:85116898218

SN - 1055-5269

VL - 7

SP - 221

EP - 232

JO - Surface Science Spectra

JF - Surface Science Spectra

IS - 3

ER -

Epitaxial VN(001) Grown and Analyzed in situ by XPS and UPS. I. Analysis of As-deposited Layers

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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