X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS) were used to study epitaxial VN(001) layers grown in situ which were Ar+ sputter etched. The films were deposited on MgO(001) at 650 °C in pure N2 discharges maintained at a pressure of 5 mTorr (0.67 Pa) and shown to have a N/V ratio of 1.06 ± 0.02 by Rutherford backscattering (RBS). The films were sputter etched with 3 keV Ar+ at an angle of 40° to a constant nitrogen-to-vanadium ratio. A Mg Kα x-ray source was used to obtain the XPS data, while the UPS data was generated by He I and He II UV radiation. The sputter etched films were found to have a N/V ratio of 0.46, indicating a preferential removal of nitrogen.
|Number of pages||9|
|Journal||Surface Science Spectra|
|Publication status||Published - 2000 Jul 1|
Bibliographical noteFunding Information:
The authors gratefully acknowledge the financial support of the Department of Energy, under Contract No. DEFG02-96-ER45439 and the use of the facilities of the Center for Microanalysis of Materials, which is partially supported by DOE, at the University of Illinois.
© 2000 American Vacuum Society.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films