Epitaxial Y2O3 film growth on an oxidized Si surface

Mann-Ho Cho, Dae Hong Ko, Y. K. Choi, I. W. Lyo, KwangHo Jeong, C. N. Whang

Research output: Contribution to journalLetter

11 Citations (Scopus)

Abstract

The effects of the Si surface state on epitaxial growth of Y2O3 layers were investigated by various measurement methods. The characterization using X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS) and high-resolution transmission electron microscopy (HRTEM) shows excellent film crystallinity when grown on an oxidized Si surface. The crystalline structure of the film was influenced by the interfacial mosaic structure, which depended on whether the Si surface contained adsorbed O or not. The thin SiO2 layer of approximately 1.5 nm, provided favorable interfacial reaction sites for the nucleation of Y2O3, and still maintained the structural registry with the underlying Si substrate. In particular, the reaction between the Y and SiO2 layer resulted in coherent finite growth, whereas the direct interaction between Y and Si was hindered by the nucleation of Y2O3. The high-quality epitaxial layer with the minimum channel yield (χmin), lower than 3%, could be grown on the oxidized Si surface.

Original languageEnglish
Pages (from-to)38-42
Number of pages5
JournalThin Solid Films
Volume402
Issue number1-2
DOIs
Publication statusPublished - 2002 Jan 1

Fingerprint

Epitaxial films
Film growth
Epitaxial growth
Nucleation
Epitaxial layers
Rutherford backscattering spectroscopy
Surface states
nucleation
High resolution transmission electron microscopy
Surface chemistry
Crystalline materials
X ray diffraction
crystallinity
backscattering
Substrates
transmission electron microscopy
high resolution
diffraction
spectroscopy
x rays

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Cho, Mann-Ho ; Ko, Dae Hong ; Choi, Y. K. ; Lyo, I. W. ; Jeong, KwangHo ; Whang, C. N. / Epitaxial Y2O3 film growth on an oxidized Si surface. In: Thin Solid Films. 2002 ; Vol. 402, No. 1-2. pp. 38-42.
@article{5d76e25c74d54277bc6dcd55b8d729a2,
title = "Epitaxial Y2O3 film growth on an oxidized Si surface",
abstract = "The effects of the Si surface state on epitaxial growth of Y2O3 layers were investigated by various measurement methods. The characterization using X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS) and high-resolution transmission electron microscopy (HRTEM) shows excellent film crystallinity when grown on an oxidized Si surface. The crystalline structure of the film was influenced by the interfacial mosaic structure, which depended on whether the Si surface contained adsorbed O or not. The thin SiO2 layer of approximately 1.5 nm, provided favorable interfacial reaction sites for the nucleation of Y2O3, and still maintained the structural registry with the underlying Si substrate. In particular, the reaction between the Y and SiO2 layer resulted in coherent finite growth, whereas the direct interaction between Y and Si was hindered by the nucleation of Y2O3. The high-quality epitaxial layer with the minimum channel yield (χmin), lower than 3{\%}, could be grown on the oxidized Si surface.",
author = "Mann-Ho Cho and Ko, {Dae Hong} and Choi, {Y. K.} and Lyo, {I. W.} and KwangHo Jeong and Whang, {C. N.}",
year = "2002",
month = "1",
day = "1",
doi = "10.1016/S0040-6090(01)01625-X",
language = "English",
volume = "402",
pages = "38--42",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1-2",

}

Epitaxial Y2O3 film growth on an oxidized Si surface. / Cho, Mann-Ho; Ko, Dae Hong; Choi, Y. K.; Lyo, I. W.; Jeong, KwangHo; Whang, C. N.

In: Thin Solid Films, Vol. 402, No. 1-2, 01.01.2002, p. 38-42.

Research output: Contribution to journalLetter

TY - JOUR

T1 - Epitaxial Y2O3 film growth on an oxidized Si surface

AU - Cho, Mann-Ho

AU - Ko, Dae Hong

AU - Choi, Y. K.

AU - Lyo, I. W.

AU - Jeong, KwangHo

AU - Whang, C. N.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - The effects of the Si surface state on epitaxial growth of Y2O3 layers were investigated by various measurement methods. The characterization using X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS) and high-resolution transmission electron microscopy (HRTEM) shows excellent film crystallinity when grown on an oxidized Si surface. The crystalline structure of the film was influenced by the interfacial mosaic structure, which depended on whether the Si surface contained adsorbed O or not. The thin SiO2 layer of approximately 1.5 nm, provided favorable interfacial reaction sites for the nucleation of Y2O3, and still maintained the structural registry with the underlying Si substrate. In particular, the reaction between the Y and SiO2 layer resulted in coherent finite growth, whereas the direct interaction between Y and Si was hindered by the nucleation of Y2O3. The high-quality epitaxial layer with the minimum channel yield (χmin), lower than 3%, could be grown on the oxidized Si surface.

AB - The effects of the Si surface state on epitaxial growth of Y2O3 layers were investigated by various measurement methods. The characterization using X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS) and high-resolution transmission electron microscopy (HRTEM) shows excellent film crystallinity when grown on an oxidized Si surface. The crystalline structure of the film was influenced by the interfacial mosaic structure, which depended on whether the Si surface contained adsorbed O or not. The thin SiO2 layer of approximately 1.5 nm, provided favorable interfacial reaction sites for the nucleation of Y2O3, and still maintained the structural registry with the underlying Si substrate. In particular, the reaction between the Y and SiO2 layer resulted in coherent finite growth, whereas the direct interaction between Y and Si was hindered by the nucleation of Y2O3. The high-quality epitaxial layer with the minimum channel yield (χmin), lower than 3%, could be grown on the oxidized Si surface.

UR - http://www.scopus.com/inward/record.url?scp=0036147654&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036147654&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(01)01625-X

DO - 10.1016/S0040-6090(01)01625-X

M3 - Letter

VL - 402

SP - 38

EP - 42

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -