Epitaxy of Si1%xCx via ultrahigh-vacuum chemical vapor deposition using Si2H6, Si3H8, or Si4H10 as Si precursors

Sangmo Koo, Hyunchul Jang, Dae Hong Ko

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2 Citations (Scopus)


In this study, disilane (Si2H6), trisilane (Si3H8), and tetrasilane (Si4H10) were used as Si precursors for the growth of Si1%xCx epilayers, and the growth properties of the layers were compared. The use of a higher-order silane significantly increased the growth rates of the Si1%xCx epilayers at a processing temperature of 650 °C. In addition, a higher growth rate realized by using a higher-order silane promoted an increase in the substitutional carbon concentration in the Si1%xCx epilayers owing to the additional injection of a C-source gas (SiH3CH3) and the incorporation of C atoms into substitutional sites. The differences in growth properties between Si precursors were explained on the basis of reaction mechanisms.

Original languageEnglish
Article number095502
JournalJapanese journal of applied physics
Issue number9
Publication statusPublished - 2017

Bibliographical note

Funding Information:
This research was financially supported by a grant from the R&D Programs for Industrial Core Technology funded by the Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea (Grant No. 10048929) and the Joint Program for Samsung Electronics Co., Ltd. (SEC)–Yonsei University.

Publisher Copyright:
© 2017 The Japan Society of Applied Physics.

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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