In this study, disilane (Si2H6), trisilane (Si3H8), and tetrasilane (Si4H10) were used as Si precursors for the growth of Si1%xCx epilayers, and the growth properties of the layers were compared. The use of a higher-order silane significantly increased the growth rates of the Si1%xCx epilayers at a processing temperature of 650 °C. In addition, a higher growth rate realized by using a higher-order silane promoted an increase in the substitutional carbon concentration in the Si1%xCx epilayers owing to the additional injection of a C-source gas (SiH3CH3) and the incorporation of C atoms into substitutional sites. The differences in growth properties between Si precursors were explained on the basis of reaction mechanisms.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)