Epitaxy of Si1%xCx via ultrahigh-vacuum chemical vapor deposition using Si2H6, Si3H8, or Si4H10 as Si precursors

Sangmo Koo, Hyunchul Jang, Dae Hong Ko

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this study, disilane (Si2H6), trisilane (Si3H8), and tetrasilane (Si4H10) were used as Si precursors for the growth of Si1%xCx epilayers, and the growth properties of the layers were compared. The use of a higher-order silane significantly increased the growth rates of the Si1%xCx epilayers at a processing temperature of 650 °C. In addition, a higher growth rate realized by using a higher-order silane promoted an increase in the substitutional carbon concentration in the Si1%xCx epilayers owing to the additional injection of a C-source gas (SiH3CH3) and the incorporation of C atoms into substitutional sites. The differences in growth properties between Si precursors were explained on the basis of reaction mechanisms.

Original languageEnglish
Article number095502
JournalJapanese Journal of Applied Physics
Volume56
Issue number9
DOIs
Publication statusPublished - 2017 Jan 1

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Epilayers
Ultrahigh vacuum
Epitaxial growth
epitaxy
ultrahigh vacuum
Chemical vapor deposition
vapor deposition
Silanes
silanes
Atoms
Carbon
Processing
Gases
injection
carbon
Temperature
gases
atoms
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "In this study, disilane (Si2H6), trisilane (Si3H8), and tetrasilane (Si4H10) were used as Si precursors for the growth of Si1{\%}xCx epilayers, and the growth properties of the layers were compared. The use of a higher-order silane significantly increased the growth rates of the Si1{\%}xCx epilayers at a processing temperature of 650 °C. In addition, a higher growth rate realized by using a higher-order silane promoted an increase in the substitutional carbon concentration in the Si1{\%}xCx epilayers owing to the additional injection of a C-source gas (SiH3CH3) and the incorporation of C atoms into substitutional sites. The differences in growth properties between Si precursors were explained on the basis of reaction mechanisms.",
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Epitaxy of Si1%xCx via ultrahigh-vacuum chemical vapor deposition using Si2H6, Si3H8, or Si4H10 as Si precursors. / Koo, Sangmo; Jang, Hyunchul; Ko, Dae Hong.

In: Japanese Journal of Applied Physics, Vol. 56, No. 9, 095502, 01.01.2017.

Research output: Contribution to journalArticle

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AU - Koo, Sangmo

AU - Jang, Hyunchul

AU - Ko, Dae Hong

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AB - In this study, disilane (Si2H6), trisilane (Si3H8), and tetrasilane (Si4H10) were used as Si precursors for the growth of Si1%xCx epilayers, and the growth properties of the layers were compared. The use of a higher-order silane significantly increased the growth rates of the Si1%xCx epilayers at a processing temperature of 650 °C. In addition, a higher growth rate realized by using a higher-order silane promoted an increase in the substitutional carbon concentration in the Si1%xCx epilayers owing to the additional injection of a C-source gas (SiH3CH3) and the incorporation of C atoms into substitutional sites. The differences in growth properties between Si precursors were explained on the basis of reaction mechanisms.

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