Equivalent circuit model for Si avalanche photodetectors fabricated in standard CMOS process

Myung Jae Lee, Hyo Soon Kang, Woo Young Choi

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)

Abstract

We present an equivalent circuit model for CMOS-compatible avalanche photodetectors. The equivalent circuit model includes an inductive component for avalanche delay, a current source for photogenerated carriers, and several components that model the device structure and parasitic effects. The model provides accurate impedance characteristics and photodetection frequency responses.

Original languageEnglish
Pages (from-to)1115-1117
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number10
DOIs
Publication statusPublished - 2008

Bibliographical note

Funding Information:
Manuscript received April 12, 2008. Current version published September 24, 2008. This work was supported by the Ministry of Information and Communication (MIC), Korea, under the Information Technology Research Center (ITRC) support program supervised by the Institute of Information Technology Advancement (IITA). The review of this letter was arranged by Prof. P. K.-L. Yu.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Equivalent circuit model for Si avalanche photodetectors fabricated in standard CMOS process'. Together they form a unique fingerprint.

Cite this