We present an equivalent circuit model for CMOS-compatible avalanche photodetectors. The equivalent circuit model includes an inductive component for avalanche delay, a current source for photogenerated carriers, and several components that model the device structure and parasitic effects. The model provides accurate impedance characteristics and photodetection frequency responses.
Bibliographical noteFunding Information:
Manuscript received April 12, 2008. Current version published September 24, 2008. This work was supported by the Ministry of Information and Communication (MIC), Korea, under the Information Technology Research Center (ITRC) support program supervised by the Institute of Information Technology Advancement (IITA). The review of this letter was arranged by Prof. P. K.-L. Yu.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering