We present equivalent circuit models for Si micro-ring modulators and Ge-on-Si photodetectors. Model parameters are extracted from measurement and simulation. These circuit models are very useful for designing Si photonic and electronic ICs.
|Title of host publication||2016 Asia Communications and Photonics Conference, ACP 2016 - Proceedings|
|Publisher||OSA - The Optical Society|
|Publication status||Published - 2016 Nov|
|Event||2016 Asia Communications and Photonics Conference, ACP 2016 - Wuhan, China|
Duration: 2016 Nov 2 → 2016 Nov 5
|Name||Asia Communications and Photonics Conference, ACP|
|Conference||2016 Asia Communications and Photonics Conference, ACP 2016|
|Period||16/11/2 → 16/11/5|
Bibliographical noteFunding Information:
We developed accurate equivalent circuit models for Si MRM and waveguide-type Ge-PD on Si. Their model parameter values are extracted from measurement and simulation. These models should be very helpful for designing electronic photonic integrated circuits using the standard EDA tools for IC design. This work was supported by National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIP) (2015R1A2A2A01007772) and Materials and Parts Technology R&D Program funded by the Ministry of Trade, Industry & Energy (MOTIE), Korea (Project No. 10065666).
All Science Journal Classification (ASJC) codes
- Computer Networks and Communications
- Electrical and Electronic Engineering