ErAs: (InGaAs)1-x (InAlAs)x alloy power generator modules

Gehong Zeng, Je Hyeong Bahk, John E. Bowers, Joshua M.O. Zide, Arthur C. Gossard, Zhixi Bian, Rajeev Singh, Ali Shakouri, Woochul Kim, Suzanne L. Singer, Arun Majumdar

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28 Citations (Scopus)


We report a wafer scale approach for the fabrication of 400 element power generator modules composed of 200 n -type ErAs: (InGaAs)0.8 (InAlAs)0.2 and 200 p -type ErAs:InGaAs alloy thermoelectric elements. The thermoelectric properties of the materials were characterized. Two sets of generator modules with the element thicknesses of 20 and 10 μm, respectively, were fabricated. The 20 μm module had an output power density of 2.5 W cm2 and 3.5 V open circuit voltages, and the 10 μm generator modules had an output power density of 1.12 W cm2 and open circuit voltage of 2.1 V. The performance of thermoelectric generator modules can further be improved by increasing the thicknesses of the elements and reducing the electrical and thermal parasitic resistances.

Original languageEnglish
Article number263510
JournalApplied Physics Letters
Issue number26
Publication statusPublished - 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Zeng, G., Bahk, J. H., Bowers, J. E., Zide, J. M. O., Gossard, A. C., Bian, Z., Singh, R., Shakouri, A., Kim, W., Singer, S. L., & Majumdar, A. (2007). ErAs: (InGaAs)1-x (InAlAs)x alloy power generator modules. Applied Physics Letters, 91(26), [263510].