ErAs: InGaAs/InGaAlAs superlattice thin-film power generator array

Gehong Zeng, John E. Bowers, Joshua M.O. Zide, Arthur C. Gossard, Woochul Kim, Suzanne Singer, Arun Majumdar, Rajeev Singh, Zhixi Bian, Yan Zhang, Ali Shakouri

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Abstract

We report a wafer scale approach for the fabrication of thin-film power generators composed of arrays of 400 p and n type ErAs:InGaAs/InGaAlAs superlattice thermoelectric elements. The elements incorporate ErAs metallic nanoparticles into the semiconductor superlattice structure to provide charge carriers and create scattering centers for phonons. p- and n-type ErAs:InGaAs/InGaAlAs superlattices with a total thickness of 5 μm were grown on InP substrate using molecular beam epitaxy. The cross-plane Seebeck coefficients and cross-plane thermal conductivity of the superlattice were measured using test pattern devices and the 3ω method, respectively. Four hundred element power generators were fabricated from these 5 μm thick, 200 μm × 200 μm in area superlattice elements. The output power was over 0.7 mW for an external resistor of 100 Ω with a 30 K temperature difference drop across the generator. We discuss the limitations to the generator performance and provide suggestions for improvements.

Original languageEnglish
Article number113502
JournalApplied Physics Letters
Volume88
Issue number11
DOIs
Publication statusPublished - 2006 Mar 30

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Zeng, G., Bowers, J. E., Zide, J. M. O., Gossard, A. C., Kim, W., Singer, S., Majumdar, A., Singh, R., Bian, Z., Zhang, Y., & Shakouri, A. (2006). ErAs: InGaAs/InGaAlAs superlattice thin-film power generator array. Applied Physics Letters, 88(11), [113502]. https://doi.org/10.1063/1.2186387