ErAs

InGaAs/InGaAlAs superlattice thin-film power generator array

Gehong Zeng, John E. Bowers, Joshua M.O. Zide, Arthur C. Gossard, Woochul Kim, Suzanne Singer, Arun Majumdar, Rajeev Singh, Zhixi Bian, Yan Zhang, Ali Shakouri

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

We report a wafer scale approach for the fabrication of thin-film power generators composed of arrays of 400 p and n type ErAs:InGaAs/InGaAlAs superlattice thermoelectric elements. The elements incorporate ErAs metallic nanoparticles into the semiconductor superlattice structure to provide charge carriers and create scattering centers for phonons. p- and n-type ErAs:InGaAs/InGaAlAs superlattices with a total thickness of 5 μm were grown on InP substrate using molecular beam epitaxy. The cross-plane Seebeck coefficients and cross-plane thermal conductivity of the superlattice were measured using test pattern devices and the 3ω method, respectively. Four hundred element power generators were fabricated from these 5 μm thick, 200 μm × 200 μm in area superlattice elements. The output power was over 0.7 mW for an external resistor of 100 Ω with a 30 K temperature difference drop across the generator. We discuss the limitations to the generator performance and provide suggestions for improvements.

Original languageEnglish
Article number113502
JournalApplied Physics Letters
Volume88
Issue number11
DOIs
Publication statusPublished - 2006 Mar 30

Fingerprint

electric generators
generators
Seebeck effect
thin films
resistors
suggestion
superlattices
charge carriers
temperature gradients
phonons
molecular beam epitaxy
thermal conductivity
wafers
nanoparticles
fabrication
output
scattering

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Zeng, G., Bowers, J. E., Zide, J. M. O., Gossard, A. C., Kim, W., Singer, S., ... Shakouri, A. (2006). ErAs: InGaAs/InGaAlAs superlattice thin-film power generator array. Applied Physics Letters, 88(11), [113502]. https://doi.org/10.1063/1.2186387
Zeng, Gehong ; Bowers, John E. ; Zide, Joshua M.O. ; Gossard, Arthur C. ; Kim, Woochul ; Singer, Suzanne ; Majumdar, Arun ; Singh, Rajeev ; Bian, Zhixi ; Zhang, Yan ; Shakouri, Ali. / ErAs : InGaAs/InGaAlAs superlattice thin-film power generator array. In: Applied Physics Letters. 2006 ; Vol. 88, No. 11.
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Zeng, G, Bowers, JE, Zide, JMO, Gossard, AC, Kim, W, Singer, S, Majumdar, A, Singh, R, Bian, Z, Zhang, Y & Shakouri, A 2006, 'ErAs: InGaAs/InGaAlAs superlattice thin-film power generator array', Applied Physics Letters, vol. 88, no. 11, 113502. https://doi.org/10.1063/1.2186387

ErAs : InGaAs/InGaAlAs superlattice thin-film power generator array. / Zeng, Gehong; Bowers, John E.; Zide, Joshua M.O.; Gossard, Arthur C.; Kim, Woochul; Singer, Suzanne; Majumdar, Arun; Singh, Rajeev; Bian, Zhixi; Zhang, Yan; Shakouri, Ali.

In: Applied Physics Letters, Vol. 88, No. 11, 113502, 30.03.2006.

Research output: Contribution to journalArticle

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AU - Zeng, Gehong

AU - Bowers, John E.

AU - Zide, Joshua M.O.

AU - Gossard, Arthur C.

AU - Kim, Woochul

AU - Singer, Suzanne

AU - Majumdar, Arun

AU - Singh, Rajeev

AU - Bian, Zhixi

AU - Zhang, Yan

AU - Shakouri, Ali

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N2 - We report a wafer scale approach for the fabrication of thin-film power generators composed of arrays of 400 p and n type ErAs:InGaAs/InGaAlAs superlattice thermoelectric elements. The elements incorporate ErAs metallic nanoparticles into the semiconductor superlattice structure to provide charge carriers and create scattering centers for phonons. p- and n-type ErAs:InGaAs/InGaAlAs superlattices with a total thickness of 5 μm were grown on InP substrate using molecular beam epitaxy. The cross-plane Seebeck coefficients and cross-plane thermal conductivity of the superlattice were measured using test pattern devices and the 3ω method, respectively. Four hundred element power generators were fabricated from these 5 μm thick, 200 μm × 200 μm in area superlattice elements. The output power was over 0.7 mW for an external resistor of 100 Ω with a 30 K temperature difference drop across the generator. We discuss the limitations to the generator performance and provide suggestions for improvements.

AB - We report a wafer scale approach for the fabrication of thin-film power generators composed of arrays of 400 p and n type ErAs:InGaAs/InGaAlAs superlattice thermoelectric elements. The elements incorporate ErAs metallic nanoparticles into the semiconductor superlattice structure to provide charge carriers and create scattering centers for phonons. p- and n-type ErAs:InGaAs/InGaAlAs superlattices with a total thickness of 5 μm were grown on InP substrate using molecular beam epitaxy. The cross-plane Seebeck coefficients and cross-plane thermal conductivity of the superlattice were measured using test pattern devices and the 3ω method, respectively. Four hundred element power generators were fabricated from these 5 μm thick, 200 μm × 200 μm in area superlattice elements. The output power was over 0.7 mW for an external resistor of 100 Ω with a 30 K temperature difference drop across the generator. We discuss the limitations to the generator performance and provide suggestions for improvements.

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Zeng G, Bowers JE, Zide JMO, Gossard AC, Kim W, Singer S et al. ErAs: InGaAs/InGaAlAs superlattice thin-film power generator array. Applied Physics Letters. 2006 Mar 30;88(11). 113502. https://doi.org/10.1063/1.2186387