Erratum

Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (Japanese Journal Applied Physics (2006) 45 (L227))

Sung Hyun Lee, Wan Shick Hong, Jong Man Kim, Hyuck Lim, Kuyng Bae Park, Chul Lae Cho, Kyung Eun Lee, Do Young Kim, Ji Sim Jung, Jang-Yeon Kwon, Takashi Noguchi

Research output: Contribution to journalComment/debate

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume45
Issue number17-19
DOIs
Publication statusPublished - 2006 Apr 28

Fingerprint

silicon films
amorphous silicon
transistors
vapor deposition
crystallization
physics
silicon
thin films
lasers

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

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title = "Erratum: Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (Japanese Journal Applied Physics (2006) 45 (L227))",
author = "Lee, {Sung Hyun} and Hong, {Wan Shick} and Kim, {Jong Man} and Hyuck Lim and Park, {Kuyng Bae} and Cho, {Chul Lae} and Lee, {Kyung Eun} and Kim, {Do Young} and Jung, {Ji Sim} and Jang-Yeon Kwon and Takashi Noguchi",
year = "2006",
month = "4",
day = "28",
doi = "10.1143/JJAP.45.L485",
language = "English",
volume = "45",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "17-19",

}

Erratum : Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (Japanese Journal Applied Physics (2006) 45 (L227)). / Lee, Sung Hyun; Hong, Wan Shick; Kim, Jong Man; Lim, Hyuck; Park, Kuyng Bae; Cho, Chul Lae; Lee, Kyung Eun; Kim, Do Young; Jung, Ji Sim; Kwon, Jang-Yeon; Noguchi, Takashi.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 45, No. 17-19, 28.04.2006.

Research output: Contribution to journalComment/debate

TY - JOUR

T1 - Erratum

T2 - Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (Japanese Journal Applied Physics (2006) 45 (L227))

AU - Lee, Sung Hyun

AU - Hong, Wan Shick

AU - Kim, Jong Man

AU - Lim, Hyuck

AU - Park, Kuyng Bae

AU - Cho, Chul Lae

AU - Lee, Kyung Eun

AU - Kim, Do Young

AU - Jung, Ji Sim

AU - Kwon, Jang-Yeon

AU - Noguchi, Takashi

PY - 2006/4/28

Y1 - 2006/4/28

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U2 - 10.1143/JJAP.45.L485

DO - 10.1143/JJAP.45.L485

M3 - Comment/debate

VL - 45

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 17-19

ER -