Erratum: Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (Japanese Journal Applied Physics (2006) 45 (L227))

Sung Hyun Lee, Wan Shick Hong, Jong Man Kim, Hyuck Lim, Kuyng Bae Park, Chul Lae Cho, Kyung Eun Lee, Do Young Kim, Ji Sim Jung, Jang Yeon Kwon, Takashi Noguchi

Research output: Contribution to journalComment/debate

Original languageEnglish
Pages (from-to)L485
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume45
Issue number17-19
DOIs
Publication statusPublished - 2006 Apr 28

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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