Erratum: Selective epitaxial growth of Si 1-xGe x films via the alternating gas supply of Si 2H 6, GeH 4, and Cl 2: Effects of Cl 2 exposure (Mater. Lett. (2012) (89-92))

Sang Joon Park, Sunggi Baik, Hyugjun Kim

Research output: Contribution to journalComment/debate

Original languageEnglish
Pages (from-to)354-355
Number of pages2
JournalMaterials Letters
Volume89
DOIs
Publication statusPublished - 2012 Dec 15

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Gas supply
Epitaxial growth

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "Erratum: Selective epitaxial growth of Si 1-xGe x films via the alternating gas supply of Si 2H 6, GeH 4, and Cl 2: Effects of Cl 2 exposure (Mater. Lett. (2012) (89-92))",
author = "Park, {Sang Joon} and Sunggi Baik and Hyugjun Kim",
year = "2012",
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language = "English",
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pages = "354--355",
journal = "Materials Letters",
issn = "0167-577X",
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AU - Baik, Sunggi

AU - Kim, Hyugjun

PY - 2012/12/15

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U2 - 10.1016/j.matlet.2012.10.001

DO - 10.1016/j.matlet.2012.10.001

M3 - Comment/debate

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SP - 354

EP - 355

JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

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