Erratum: Selective epitaxial growth of Si 1-xGe x films via the alternating gas supply of Si 2H 6, GeH 4, and Cl 2: Effects of Cl 2 exposure (Mater. Lett. (2012) (89-92))

Sang Joon Park; Sunggi Baik; Hyugjun Kim

doi:10.1016/j.matlet.2012.10.001

Erratum: Selective epitaxial growth of Si _1-xGe _x films via the alternating gas supply of Si ₂H ₆, GeH ₄, and Cl ₂: Effects of Cl ₂ exposure (Mater. Lett. (2012) (89-92))

Sang Joon Park, Sunggi Baik, Hyugjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Pages (from-to)	354-355
Number of pages	2
Journal	Materials Letters
Volume	89
DOIs	https://doi.org/10.1016/j.matlet.2012.10.001
Publication status	Published - 2012 Dec 15

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.matlet.2012.10.001

Cite this

@article{fec1e560a76944589dcdea9276a13874,

title = "Erratum: Selective epitaxial growth of Si 1-xGe x films via the alternating gas supply of Si 2H 6, GeH 4, and Cl 2: Effects of Cl 2 exposure (Mater. Lett. (2012) (89-92))",

author = "Park, {Sang Joon} and Sunggi Baik and Hyugjun Kim",

year = "2012",

month = dec,

day = "15",

doi = "10.1016/j.matlet.2012.10.001",

language = "English",

volume = "89",

pages = "354--355",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier",

}

TY - JOUR

T1 - Erratum

T2 - Selective epitaxial growth of Si 1-xGe x films via the alternating gas supply of Si 2H 6, GeH 4, and Cl 2: Effects of Cl 2 exposure (Mater. Lett. (2012) (89-92))

AU - Park, Sang Joon

AU - Baik, Sunggi

AU - Kim, Hyugjun

PY - 2012/12/15

Y1 - 2012/12/15

UR - http://www.scopus.com/inward/record.url?scp=84867555533&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84867555533&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2012.10.001

DO - 10.1016/j.matlet.2012.10.001

M3 - Comment/debate

AN - SCOPUS:84867555533

SN - 0167-577X

VL - 89

SP - 354

EP - 355

JO - Materials Letters

JF - Materials Letters

ER -

Erratum: Selective epitaxial growth of Si 1-xGe x films via the alternating gas supply of Si 2H 6, GeH 4, and Cl 2: Effects of Cl 2 exposure (Mater. Lett. (2012) (89-92))

All Science Journal Classification (ASJC) codes

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Cite this

Erratum: Selective epitaxial growth of Si _1-xGe _x films via the alternating gas supply of Si ₂H ₆, GeH ₄, and Cl ₂: Effects of Cl ₂ exposure (Mater. Lett. (2012) (89-92))