Etch behavior of ALD Al2O3 on HfSiO and HfSiON stacks in acidic and basic etchants

Jisook Oh, Jihyun Myoung, Jin Sung Bae, Sangwoo Lim

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

For the integration of advance gate stacks, selective wet etching of an Al2O3 capping layer on top of high-k dielectrics was studied. From the fundamental etch study on the single-layer Al 2O3, HfSiO and HfSiON thin films were prepared by atomic layer deposition (ALD). Using the etch rate information of each single layer, several optimized etch conditions in acidic and basic etchants including H 3PO4, NH4OH, and TMAH resulted in wet etch selectivities of Al2O3 to high-k materials higher than 50:1. As a result, the Al2O3 capping layer on Si/SiO 2/high-k multi-layer gate stack could be completely removed without thinning of the underlying high-k thin films. Finally, the etch mechanisms of Al2O3 in acidic and basic etchants were studied and the etch rates of Al2O3 were determined as functions of H and OH-.

Original languageEnglish
Pages (from-to)D217-D222
JournalJournal of the Electrochemical Society
Volume158
Issue number4
DOIs
Publication statusPublished - 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Etch behavior of ALD Al<sub>2</sub>O<sub>3</sub> on HfSiO and HfSiON stacks in acidic and basic etchants'. Together they form a unique fingerprint.

Cite this