Etching characteristics and mechanism of Ge2 Sb2 Te5 thin films in inductively coupled Cl2 Ar plasma

Nam Ki Min, Alexander Efremov, Yun Ho Kim, Mansu Kim, Hyung-Ho Park, Hyun Woo Lee, Kwang Ho Kwon

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

This work reports the investigations of both etch characteristics and mechanisms for the Ge2 Sb2 Te5 (GST) thin films in the Cl2 Ar inductively coupled plasma. The GST etch rates and etch selectivities over Si O2 were measured as functions of the Cl2 Ar mixing ratio (43%-86% Ar), gas pressure (4-10 mTorr), and source power (400-700 W). Langmuir probe diagnostics and zero-dimensional (global) plasma modeling provided the information on plasma parameters and behaviors of plasma active species. From the model-based analysis of surface kinetics, it was found that with variations of the Cl2 Ar mixing ratio and gas pressure, the GST etch rate follows the changes of Cl atom density and flux but contradicts with those for positive ions. The GST etch mechanism in the Cl2 -containing plasmas represents a combination of spontaneous and ion-assisted chemical reactions with no limitation by ion-surface interaction kinetics such as physical sputtering of the main material or the ion-stimulated desorption of low volatile reaction products.

Original languageEnglish
Pages (from-to)205-211
Number of pages7
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume26
Issue number2
DOIs
Publication statusPublished - 2008 Mar 10

Fingerprint

Etching
etching
Plasmas
Thin films
Ions
thin films
mixing ratios
Gases
gas pressure
Plasma diagnostics
Langmuir probes
Kinetics
Inductively coupled plasma
Reaction products
ions
Sputtering
kinetics
Chemical reactions
electrostatic probes
Desorption

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Min, Nam Ki ; Efremov, Alexander ; Kim, Yun Ho ; Kim, Mansu ; Park, Hyung-Ho ; Lee, Hyun Woo ; Kwon, Kwang Ho. / Etching characteristics and mechanism of Ge2 Sb2 Te5 thin films in inductively coupled Cl2 Ar plasma. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2008 ; Vol. 26, No. 2. pp. 205-211.
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abstract = "This work reports the investigations of both etch characteristics and mechanisms for the Ge2 Sb2 Te5 (GST) thin films in the Cl2 Ar inductively coupled plasma. The GST etch rates and etch selectivities over Si O2 were measured as functions of the Cl2 Ar mixing ratio (43{\%}-86{\%} Ar), gas pressure (4-10 mTorr), and source power (400-700 W). Langmuir probe diagnostics and zero-dimensional (global) plasma modeling provided the information on plasma parameters and behaviors of plasma active species. From the model-based analysis of surface kinetics, it was found that with variations of the Cl2 Ar mixing ratio and gas pressure, the GST etch rate follows the changes of Cl atom density and flux but contradicts with those for positive ions. The GST etch mechanism in the Cl2 -containing plasmas represents a combination of spontaneous and ion-assisted chemical reactions with no limitation by ion-surface interaction kinetics such as physical sputtering of the main material or the ion-stimulated desorption of low volatile reaction products.",
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Etching characteristics and mechanism of Ge2 Sb2 Te5 thin films in inductively coupled Cl2 Ar plasma. / Min, Nam Ki; Efremov, Alexander; Kim, Yun Ho; Kim, Mansu; Park, Hyung-Ho; Lee, Hyun Woo; Kwon, Kwang Ho.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 26, No. 2, 10.03.2008, p. 205-211.

Research output: Contribution to journalArticle

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AU - Min, Nam Ki

AU - Efremov, Alexander

AU - Kim, Yun Ho

AU - Kim, Mansu

AU - Park, Hyung-Ho

AU - Lee, Hyun Woo

AU - Kwon, Kwang Ho

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N2 - This work reports the investigations of both etch characteristics and mechanisms for the Ge2 Sb2 Te5 (GST) thin films in the Cl2 Ar inductively coupled plasma. The GST etch rates and etch selectivities over Si O2 were measured as functions of the Cl2 Ar mixing ratio (43%-86% Ar), gas pressure (4-10 mTorr), and source power (400-700 W). Langmuir probe diagnostics and zero-dimensional (global) plasma modeling provided the information on plasma parameters and behaviors of plasma active species. From the model-based analysis of surface kinetics, it was found that with variations of the Cl2 Ar mixing ratio and gas pressure, the GST etch rate follows the changes of Cl atom density and flux but contradicts with those for positive ions. The GST etch mechanism in the Cl2 -containing plasmas represents a combination of spontaneous and ion-assisted chemical reactions with no limitation by ion-surface interaction kinetics such as physical sputtering of the main material or the ion-stimulated desorption of low volatile reaction products.

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