Evaluation of phase transition behavior of Ge2Sb 2Te5 thin film for phase change random access memory

Woo Hyuk Do, Sung Soon Kim, Jun Hyun Bae, Jun Ho Cha, Kyung Ho Kim, Young-Kook Lee, Hong Lim Lee

Research output: Contribution to journalArticle

Abstract

The phase transition behavior of Ge2Sb2Te5 (GST) thin film, which is a candidate material of recording layer for phase change random access memory (PRAM), has been evaluated using an in-situ reflectance measurement method. The experimental data have been analyzed by using johnson-mehl-avrami-kolomogorov (JMAK) model. JMAK model can be used only in isothermal state. However, temperature changes with time during the operation of PRAM. To apply JMAK equation to PRAM simulation, it has been assumed that the temperature increases stepwise and isothermally. By using JMAK equation and assumption for the transient state, the phase transition behavior of GST thin film has been predicted under 3°C/min heating rate in this study. The simulation result agrees well with the experimental results. Therefore, it can be concluded that JMAK equation can be used for the PRAM simulation model.

Original languageEnglish
Pages (from-to)18-22
Number of pages5
JournalJournal of the Korean Ceramic Society
Volume44
Issue number1
DOIs
Publication statusPublished - 2007 Jan 1

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Phase transitions
Data storage equipment
Thin films
Reflectometers
Heating rate
Temperature

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites

Cite this

Do, Woo Hyuk ; Kim, Sung Soon ; Bae, Jun Hyun ; Cha, Jun Ho ; Kim, Kyung Ho ; Lee, Young-Kook ; Lee, Hong Lim. / Evaluation of phase transition behavior of Ge2Sb 2Te5 thin film for phase change random access memory. In: Journal of the Korean Ceramic Society. 2007 ; Vol. 44, No. 1. pp. 18-22.
@article{cd32dba444a24fa38df7c9af655d6dc1,
title = "Evaluation of phase transition behavior of Ge2Sb 2Te5 thin film for phase change random access memory",
abstract = "The phase transition behavior of Ge2Sb2Te5 (GST) thin film, which is a candidate material of recording layer for phase change random access memory (PRAM), has been evaluated using an in-situ reflectance measurement method. The experimental data have been analyzed by using johnson-mehl-avrami-kolomogorov (JMAK) model. JMAK model can be used only in isothermal state. However, temperature changes with time during the operation of PRAM. To apply JMAK equation to PRAM simulation, it has been assumed that the temperature increases stepwise and isothermally. By using JMAK equation and assumption for the transient state, the phase transition behavior of GST thin film has been predicted under 3°C/min heating rate in this study. The simulation result agrees well with the experimental results. Therefore, it can be concluded that JMAK equation can be used for the PRAM simulation model.",
author = "Do, {Woo Hyuk} and Kim, {Sung Soon} and Bae, {Jun Hyun} and Cha, {Jun Ho} and Kim, {Kyung Ho} and Young-Kook Lee and Lee, {Hong Lim}",
year = "2007",
month = "1",
day = "1",
doi = "10.4191/KCERS.2007.44.1.018",
language = "English",
volume = "44",
pages = "18--22",
journal = "Journal of the Korean Ceramic Society",
issn = "1229-7801",
publisher = "Korean Ceramic Society",
number = "1",

}

Evaluation of phase transition behavior of Ge2Sb 2Te5 thin film for phase change random access memory. / Do, Woo Hyuk; Kim, Sung Soon; Bae, Jun Hyun; Cha, Jun Ho; Kim, Kyung Ho; Lee, Young-Kook; Lee, Hong Lim.

In: Journal of the Korean Ceramic Society, Vol. 44, No. 1, 01.01.2007, p. 18-22.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Evaluation of phase transition behavior of Ge2Sb 2Te5 thin film for phase change random access memory

AU - Do, Woo Hyuk

AU - Kim, Sung Soon

AU - Bae, Jun Hyun

AU - Cha, Jun Ho

AU - Kim, Kyung Ho

AU - Lee, Young-Kook

AU - Lee, Hong Lim

PY - 2007/1/1

Y1 - 2007/1/1

N2 - The phase transition behavior of Ge2Sb2Te5 (GST) thin film, which is a candidate material of recording layer for phase change random access memory (PRAM), has been evaluated using an in-situ reflectance measurement method. The experimental data have been analyzed by using johnson-mehl-avrami-kolomogorov (JMAK) model. JMAK model can be used only in isothermal state. However, temperature changes with time during the operation of PRAM. To apply JMAK equation to PRAM simulation, it has been assumed that the temperature increases stepwise and isothermally. By using JMAK equation and assumption for the transient state, the phase transition behavior of GST thin film has been predicted under 3°C/min heating rate in this study. The simulation result agrees well with the experimental results. Therefore, it can be concluded that JMAK equation can be used for the PRAM simulation model.

AB - The phase transition behavior of Ge2Sb2Te5 (GST) thin film, which is a candidate material of recording layer for phase change random access memory (PRAM), has been evaluated using an in-situ reflectance measurement method. The experimental data have been analyzed by using johnson-mehl-avrami-kolomogorov (JMAK) model. JMAK model can be used only in isothermal state. However, temperature changes with time during the operation of PRAM. To apply JMAK equation to PRAM simulation, it has been assumed that the temperature increases stepwise and isothermally. By using JMAK equation and assumption for the transient state, the phase transition behavior of GST thin film has been predicted under 3°C/min heating rate in this study. The simulation result agrees well with the experimental results. Therefore, it can be concluded that JMAK equation can be used for the PRAM simulation model.

UR - http://www.scopus.com/inward/record.url?scp=33947226104&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33947226104&partnerID=8YFLogxK

U2 - 10.4191/KCERS.2007.44.1.018

DO - 10.4191/KCERS.2007.44.1.018

M3 - Article

AN - SCOPUS:33947226104

VL - 44

SP - 18

EP - 22

JO - Journal of the Korean Ceramic Society

JF - Journal of the Korean Ceramic Society

SN - 1229-7801

IS - 1

ER -