The material and dielectric properties of SiO2 aerogel thin films were studied. These films were fabricated by spin coating and a subsequent supercritical drying method. Film porosity was evaluated as 67% with Rutherford backscattering spectrometry and its dielectric constant was measured to be 2.15 using metal/insulator/semiconductor structure. Dielectric constant of SiO2 aerogel was sensitive to the surface coverage and we could obtain a lower dielectric constant, 2.07 with thermal dehydration at 450°C. This value was one of the lowest among intermetal dielectric materials ever reported.
Bibliographical noteFunding Information:
This research was performed under the auspices of the Electronics and Telecommunications Research Institute (ETRI) in Korea under Contract No. 96004.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering