Evaluation of sio2 aerogel thin film with ultra low dielectric constant as an intermetal dielectric

Moon Ho Jo, Jung Kyun Hong, Hyung Ho Park, Joong Jung Kim, Sang Hun Hyun

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29 Citations (Scopus)

Abstract

The material and dielectric properties of SiO2 aerogel thin films were studied. These films were fabricated by spin coating and a subsequent supercritical drying method. Film porosity was evaluated as 67% with Rutherford backscattering spectrometry and its dielectric constant was measured to be 2.15 using metal/insulator/semiconductor structure. Dielectric constant of SiO2 aerogel was sensitive to the surface coverage and we could obtain a lower dielectric constant, 2.07 with thermal dehydration at 450°C. This value was one of the lowest among intermetal dielectric materials ever reported.

Original languageEnglish
Pages (from-to)343-348
Number of pages6
JournalMicroelectronic Engineering
Volume33
Issue number1-4
DOIs
Publication statusPublished - 1997 Jan

Bibliographical note

Funding Information:
This research was performed under the auspices of the Electronics and Telecommunications Research Institute (ETRI) in Korea under Contract No. 96004.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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