Evaluation of the electrical properties and interfacial reactions for the polycrystalline Si1-xGex(x=0,0.6)/HfO2 gate stack

Sung Kwan Kang; Suheun Nam; Byung Gi Min; Seok Woo Nam; Dae Hong Ko; Mann Ho Cho

doi:10.1063/1.1608487

Evaluation of the electrical properties and interfacial reactions for the polycrystalline Si_1-xGe_x(x=0,0.6)/HfO₂ gate stack

Sung Kwan Kang, Suheun Nam, Byung Gi Min, Seok Woo Nam, Dae Hong Ko, Mann Ho Cho

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

An evaluation of the effect of interfacial reactions on the electrical properties of a polycrystalline Si_1-xGe_x/HfO₂ gate stack was performed. It was found that the results were compared with those of a conventional poly-Si/HfO₂ system. Results showed that the differences in reactions between a poly-Si_0.4Ge _0.6/HfO₂ and a poly-Si/HfO₂ interface were due to the accumulation of Ge.

Original language	English
Pages (from-to)	2004-2006
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	10
DOIs	https://doi.org/10.1063/1.1608487
Publication status	Published - 2003 Sep 8

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1608487

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abstract = "An evaluation of the effect of interfacial reactions on the electrical properties of a polycrystalline Si1-xGex/HfO2 gate stack was performed. It was found that the results were compared with those of a conventional poly-Si/HfO2 system. Results showed that the differences in reactions between a poly-Si0.4Ge 0.6/HfO2 and a poly-Si/HfO2 interface were due to the accumulation of Ge.",

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AU - Nam, Suheun

AU - Min, Byung Gi

AU - Nam, Seok Woo

AU - Ko, Dae Hong

AU - Cho, Mann Ho

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AB - An evaluation of the effect of interfacial reactions on the electrical properties of a polycrystalline Si1-xGex/HfO2 gate stack was performed. It was found that the results were compared with those of a conventional poly-Si/HfO2 system. Results showed that the differences in reactions between a poly-Si0.4Ge 0.6/HfO2 and a poly-Si/HfO2 interface were due to the accumulation of Ge.

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