Abstract
An evaluation of the effect of interfacial reactions on the electrical properties of a polycrystalline Si1-xGex/HfO2 gate stack was performed. It was found that the results were compared with those of a conventional poly-Si/HfO2 system. Results showed that the differences in reactions between a poly-Si0.4Ge 0.6/HfO2 and a poly-Si/HfO2 interface were due to the accumulation of Ge.
Original language | English |
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Pages (from-to) | 2004-2006 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 83 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2003 Sep 8 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)