Abstract
An evaluation of the effect of interfacial reactions on the electrical properties of a polycrystalline Si 1-x Ge x /HfO 2 gate stack was performed. It was found that the results were compared with those of a conventional poly-Si/HfO 2 system. Results showed that the differences in reactions between a poly-Si 0.4 Ge 0.6 /HfO 2 and a poly-Si/HfO 2 interface were due to the accumulation of Ge.
| Original language | English |
|---|---|
| Pages (from-to) | 2004-2006 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 83 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2003 Sep 8 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Evaluation of the electrical properties and interfacial reactions for the polycrystalline Si 1-x Ge x (x=0,0.6)/HfO 2 gate stack . / Kang, Sung Kwan; Nam, Suheun; Min, Byung Gi; Nam, Seok Woo; Ko, Dae Hong; Cho, Mann-Ho.
In: Applied Physics Letters, Vol. 83, No. 10, 08.09.2003, p. 2004-2006.Research output: Contribution to journal › Article
TY - JOUR
T1 - Evaluation of the electrical properties and interfacial reactions for the polycrystalline Si 1-x Ge x (x=0,0.6)/HfO 2 gate stack
AU - Kang, Sung Kwan
AU - Nam, Suheun
AU - Min, Byung Gi
AU - Nam, Seok Woo
AU - Ko, Dae Hong
AU - Cho, Mann-Ho
PY - 2003/9/8
Y1 - 2003/9/8
N2 - An evaluation of the effect of interfacial reactions on the electrical properties of a polycrystalline Si 1-x Ge x /HfO 2 gate stack was performed. It was found that the results were compared with those of a conventional poly-Si/HfO 2 system. Results showed that the differences in reactions between a poly-Si 0.4 Ge 0.6 /HfO 2 and a poly-Si/HfO 2 interface were due to the accumulation of Ge.
AB - An evaluation of the effect of interfacial reactions on the electrical properties of a polycrystalline Si 1-x Ge x /HfO 2 gate stack was performed. It was found that the results were compared with those of a conventional poly-Si/HfO 2 system. Results showed that the differences in reactions between a poly-Si 0.4 Ge 0.6 /HfO 2 and a poly-Si/HfO 2 interface were due to the accumulation of Ge.
UR - http://www.scopus.com/inward/record.url?scp=0141886162&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0141886162&partnerID=8YFLogxK
U2 - 10.1063/1.1608487
DO - 10.1063/1.1608487
M3 - Article
AN - SCOPUS:0141886162
VL - 83
SP - 2004
EP - 2006
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 10
ER -