Abstract
An evaluation of the effect of interfacial reactions on the electrical properties of a polycrystalline Si1-xGex/HfO2 gate stack was performed. It was found that the results were compared with those of a conventional poly-Si/HfO2 system. Results showed that the differences in reactions between a poly-Si0.4Ge 0.6/HfO2 and a poly-Si/HfO2 interface were due to the accumulation of Ge.
| Original language | English |
|---|---|
| Pages (from-to) | 2004-2006 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 83 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2003 Sep 8 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Kang, S. K., Nam, S., Min, B. G., Nam, S. W., Ko, D. H., & Cho, M. H. (2003). Evaluation of the electrical properties and interfacial reactions for the polycrystalline Si1-xGex(x=0,0.6)/HfO2 gate stack. Applied Physics Letters, 83(10), 2004-2006. https://doi.org/10.1063/1.1608487