Evaluation of the electrical properties and interfacial reactions for the polycrystalline Si 1-x Ge x (x=0,0.6)/HfO 2 gate stack

Sung Kwan Kang, Suheun Nam, Byung Gi Min, Seok Woo Nam, Dae Hong Ko, Mann-Ho Cho

Research output: Contribution to journalArticle

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Abstract

An evaluation of the effect of interfacial reactions on the electrical properties of a polycrystalline Si 1-x Ge x /HfO 2 gate stack was performed. It was found that the results were compared with those of a conventional poly-Si/HfO 2 system. Results showed that the differences in reactions between a poly-Si 0.4 Ge 0.6 /HfO 2 and a poly-Si/HfO 2 interface were due to the accumulation of Ge.

Original languageEnglish
Pages (from-to)2004-2006
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number10
DOIs
Publication statusPublished - 2003 Sep 8

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electrical properties
evaluation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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Evaluation of the electrical properties and interfacial reactions for the polycrystalline Si 1-x Ge x (x=0,0.6)/HfO 2 gate stack . / Kang, Sung Kwan; Nam, Suheun; Min, Byung Gi; Nam, Seok Woo; Ko, Dae Hong; Cho, Mann-Ho.

In: Applied Physics Letters, Vol. 83, No. 10, 08.09.2003, p. 2004-2006.

Research output: Contribution to journalArticle

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AU - Cho, Mann-Ho

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