Evaluation of the electrical properties and interfacial reactions for the polycrystalline Si1-xGex(x=0,0.6)/HfO2 gate stack

Sung Kwan Kang, Suheun Nam, Byung Gi Min, Seok Woo Nam, Dae Hong Ko, Mann Ho Cho

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An evaluation of the effect of interfacial reactions on the electrical properties of a polycrystalline Si1-xGex/HfO2 gate stack was performed. It was found that the results were compared with those of a conventional poly-Si/HfO2 system. Results showed that the differences in reactions between a poly-Si0.4Ge 0.6/HfO2 and a poly-Si/HfO2 interface were due to the accumulation of Ge.

Original languageEnglish
Pages (from-to)2004-2006
Number of pages3
JournalApplied Physics Letters
Issue number10
Publication statusPublished - 2003 Sep 8


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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