Evaluation of the electrical properties and interfacial reactions for the polycrystalline Si1-xGex(x=0,0.6)/HfO2 gate stack

Sung Kwan Kang; Suheun Nam; Byung Gi Min; Seok Woo Nam; Dae Hong Ko; Mann Ho Cho

doi:10.1063/1.1608487

Evaluation of the electrical properties and interfacial reactions for the polycrystalline Si_1-xGe_x(x=0,0.6)/HfO₂ gate stack

Sung Kwan Kang, Suheun Nam, Byung Gi Min, Seok Woo Nam, Dae Hong Ko, Mann Ho Cho

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

An evaluation of the effect of interfacial reactions on the electrical properties of a polycrystalline Si_1-xGe_x/HfO₂ gate stack was performed. It was found that the results were compared with those of a conventional poly-Si/HfO₂ system. Results showed that the differences in reactions between a poly-Si_0.4Ge _0.6/HfO₂ and a poly-Si/HfO₂ interface were due to the accumulation of Ge.

Original language	English
Pages (from-to)	2004-2006
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	10
DOIs	https://doi.org/10.1063/1.1608487
Publication status	Published - 2003 Sep 8

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1608487

Cite this

@article{8fb2c3bb99334a0fa4a4458a26495202,

title = "Evaluation of the electrical properties and interfacial reactions for the polycrystalline Si1-xGex(x=0,0.6)/HfO2 gate stack",

abstract = "An evaluation of the effect of interfacial reactions on the electrical properties of a polycrystalline Si1-xGex/HfO2 gate stack was performed. It was found that the results were compared with those of a conventional poly-Si/HfO2 system. Results showed that the differences in reactions between a poly-Si0.4Ge 0.6/HfO2 and a poly-Si/HfO2 interface were due to the accumulation of Ge.",

author = "Kang, {Sung Kwan} and Suheun Nam and Min, {Byung Gi} and Nam, {Seok Woo} and Ko, {Dae Hong} and Cho, {Mann Ho}",

year = "2003",

month = sep,

day = "8",

doi = "10.1063/1.1608487",

language = "English",

volume = "83",

pages = "2004--2006",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "10",

}

TY - JOUR

T1 - Evaluation of the electrical properties and interfacial reactions for the polycrystalline Si1-xGex(x=0,0.6)/HfO2 gate stack

AU - Kang, Sung Kwan

AU - Nam, Suheun

AU - Min, Byung Gi

AU - Nam, Seok Woo

AU - Ko, Dae Hong

AU - Cho, Mann Ho

PY - 2003/9/8

Y1 - 2003/9/8

N2 - An evaluation of the effect of interfacial reactions on the electrical properties of a polycrystalline Si1-xGex/HfO2 gate stack was performed. It was found that the results were compared with those of a conventional poly-Si/HfO2 system. Results showed that the differences in reactions between a poly-Si0.4Ge 0.6/HfO2 and a poly-Si/HfO2 interface were due to the accumulation of Ge.

AB - An evaluation of the effect of interfacial reactions on the electrical properties of a polycrystalline Si1-xGex/HfO2 gate stack was performed. It was found that the results were compared with those of a conventional poly-Si/HfO2 system. Results showed that the differences in reactions between a poly-Si0.4Ge 0.6/HfO2 and a poly-Si/HfO2 interface were due to the accumulation of Ge.

UR - http://www.scopus.com/inward/record.url?scp=0141886162&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0141886162&partnerID=8YFLogxK

U2 - 10.1063/1.1608487

DO - 10.1063/1.1608487

M3 - Article

AN - SCOPUS:0141886162

VL - 83

SP - 2004

EP - 2006

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

ER -

Evaluation of the electrical properties and interfacial reactions for the polycrystalline Si_1-xGe_x(x=0,0.6)/HfO₂ gate stack

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this