Evaluation of titanium disilicide/copper Schottky gate for AlGaN/GaN high electron mobility transistors

Seonno Yoon, Seung Min Lee, Jeyoung Kim, Hi Deok Lee, Ho Young Cha, Jungwoo Oh

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1 Citation (Scopus)

Abstract

Titanium disilicide/copper (TiSi2/Cu) gate AlGaN/GaN high electron mobility transistors (HEMTs) with low gate leakage current are demonstrated. The TiSi2/Cu gate devices demonstrate electrical characteristics that are comparable to those of conventional Ni/Au gate devices. At gate voltage of -20 V, typical gate leakage current for a TiSi2/Cu gate device with a gate length of 5 μm and width of 200 μm is found to be as low as 5.15 10-7 mA mm-1, which is three orders lower than that of the Ni/Au gate device. The lower gate leakage current is primarily caused by the higher Schottky barrier height of TiSi2/Cu on AlGaN/GaN HEMTs than that of Ni/Au by 0.36 eV. The threshold voltages of the TiSi2/Cu gate HEMTs were maintained to be equivalent to that of the Ni/Au gate device. No Cu diffusion was found at the metal and AlGaN interface by secondary ion mass spectrometry and scanning transmission electron microscopy. These results indicate that TiSi2 is a good barrier layer of Cu diffusion, and titanium disilicide/copper is a promising candidate for high-performance AlGaN/GaN HEMTs.

Original languageEnglish
Article number035012
JournalSemiconductor Science and Technology
Volume32
Issue number3
DOIs
Publication statusPublished - 2017 Feb 10

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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