Evidence for carrier-induced ferromagnetic ordering in Zn 1-xMnxO thin films: Anomalous Hall effect

Wooyoung Shim, Kyoung Il Lee, Wooyoung Lee, Kyung Ah Jeon, Sang Yeol Lee, Myung Hwa Jung

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The intrinsic origin of the ferromagnetic ordering in Zn1-x Mnx O thin films grown by pulsed-laser deposition was investigated. The ferromagnetic behaviors for a Zn1-x Mnx O (x=0.26) film grown at 700 °C under oxygen pressures of 10-1 Torr were observed at 4 and 300 K. The anomalous Hall effect (AHE) was found at temperatures of up to 210 K for the Zn0.74 Mn0.26 O thin film. The anomalous Hall coefficients (RA) were determined to be approximately proportional to the square of resistivity in the low field region, indicating the side-jump process for the AHE. Our results provide direct experimental evidence that a carrier-mediated mechanism is responsible for the ferromagnetic ordering in Zn1-x Mnx O thin films grown by pulsed-laser deposition.

Original languageEnglish
Article number123908
JournalJournal of Applied Physics
Volume101
Issue number12
DOIs
Publication statusPublished - 2007 Aug 2

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Hall effect
pulsed laser deposition
thin films
electrical resistivity
oxygen
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Shim, Wooyoung ; Lee, Kyoung Il ; Lee, Wooyoung ; Jeon, Kyung Ah ; Lee, Sang Yeol ; Jung, Myung Hwa. / Evidence for carrier-induced ferromagnetic ordering in Zn 1-xMnxO thin films : Anomalous Hall effect. In: Journal of Applied Physics. 2007 ; Vol. 101, No. 12.
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abstract = "The intrinsic origin of the ferromagnetic ordering in Zn1-x Mnx O thin films grown by pulsed-laser deposition was investigated. The ferromagnetic behaviors for a Zn1-x Mnx O (x=0.26) film grown at 700 °C under oxygen pressures of 10-1 Torr were observed at 4 and 300 K. The anomalous Hall effect (AHE) was found at temperatures of up to 210 K for the Zn0.74 Mn0.26 O thin film. The anomalous Hall coefficients (RA) were determined to be approximately proportional to the square of resistivity in the low field region, indicating the side-jump process for the AHE. Our results provide direct experimental evidence that a carrier-mediated mechanism is responsible for the ferromagnetic ordering in Zn1-x Mnx O thin films grown by pulsed-laser deposition.",
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Evidence for carrier-induced ferromagnetic ordering in Zn 1-xMnxO thin films : Anomalous Hall effect. / Shim, Wooyoung; Lee, Kyoung Il; Lee, Wooyoung; Jeon, Kyung Ah; Lee, Sang Yeol; Jung, Myung Hwa.

In: Journal of Applied Physics, Vol. 101, No. 12, 123908, 02.08.2007.

Research output: Contribution to journalArticle

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AU - Shim, Wooyoung

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