The intrinsic origin of the ferromagnetic ordering in Zn1-x Mnx O thin films grown by pulsed-laser deposition was investigated. The ferromagnetic behaviors for a Zn1-x Mnx O (x=0.26) film grown at 700 °C under oxygen pressures of 10-1 Torr were observed at 4 and 300 K. The anomalous Hall effect (AHE) was found at temperatures of up to 210 K for the Zn0.74 Mn0.26 O thin film. The anomalous Hall coefficients (RA) were determined to be approximately proportional to the square of resistivity in the low field region, indicating the side-jump process for the AHE. Our results provide direct experimental evidence that a carrier-mediated mechanism is responsible for the ferromagnetic ordering in Zn1-x Mnx O thin films grown by pulsed-laser deposition.
Bibliographical noteFunding Information:
This work was supported by KOSEF through the National Core Research Center for Nanomedical Technology (R15–2004–024–00000–0) and by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST, R01–2005–000–10711–0) and by the Korean Ministry of Science and Technology through the Cavendish-KAIST Research Cooperation Program.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)