Evidence for carrier-induced ferromagnetic ordering in Zn 1-xMnxO thin films: Anomalous Hall effect

Wooyoung Shim; Kyoung Il Lee; Wooyoung Lee; Kyung Ah Jeon; Sang Yeol Lee; Myung Hwa Jung

doi:10.1063/1.2743728

Evidence for carrier-induced ferromagnetic ordering in Zn _1-xMn_xO thin films: Anomalous Hall effect

Wooyoung Shim, Kyoung Il Lee, Wooyoung Lee, Kyung Ah Jeon, Sang Yeol Lee, Myung Hwa Jung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The intrinsic origin of the ferromagnetic ordering in Zn1-x Mnx O thin films grown by pulsed-laser deposition was investigated. The ferromagnetic behaviors for a Zn1-x Mnx O (x=0.26) film grown at 700 °C under oxygen pressures of 10-1 Torr were observed at 4 and 300 K. The anomalous Hall effect (AHE) was found at temperatures of up to 210 K for the Zn0.74 Mn0.26 O thin film. The anomalous Hall coefficients (RA) were determined to be approximately proportional to the square of resistivity in the low field region, indicating the side-jump process for the AHE. Our results provide direct experimental evidence that a carrier-mediated mechanism is responsible for the ferromagnetic ordering in Zn1-x Mnx O thin films grown by pulsed-laser deposition.

Original language	English
Article number	123908
Journal	Journal of Applied Physics
Volume	101
Issue number	12
DOIs	https://doi.org/10.1063/1.2743728
Publication status	Published - 2007

Bibliographical note

Funding Information:
This work was supported by KOSEF through the National Core Research Center for Nanomedical Technology (R15–2004–024–00000–0) and by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST, R01–2005–000–10711–0) and by the Korean Ministry of Science and Technology through the Cavendish-KAIST Research Cooperation Program.

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Access to Document

10.1063/1.2743728

Cite this

@article{04454d613b6c43b289a20ae11531d461,

title = "Evidence for carrier-induced ferromagnetic ordering in Zn 1-xMnxO thin films: Anomalous Hall effect",

abstract = "The intrinsic origin of the ferromagnetic ordering in Zn1-x Mnx O thin films grown by pulsed-laser deposition was investigated. The ferromagnetic behaviors for a Zn1-x Mnx O (x=0.26) film grown at 700 °C under oxygen pressures of 10-1 Torr were observed at 4 and 300 K. The anomalous Hall effect (AHE) was found at temperatures of up to 210 K for the Zn0.74 Mn0.26 O thin film. The anomalous Hall coefficients (RA) were determined to be approximately proportional to the square of resistivity in the low field region, indicating the side-jump process for the AHE. Our results provide direct experimental evidence that a carrier-mediated mechanism is responsible for the ferromagnetic ordering in Zn1-x Mnx O thin films grown by pulsed-laser deposition.",

author = "Wooyoung Shim and Lee, {Kyoung Il} and Wooyoung Lee and Jeon, {Kyung Ah} and Lee, {Sang Yeol} and Jung, {Myung Hwa}",

note = "Funding Information: This work was supported by KOSEF through the National Core Research Center for Nanomedical Technology (R15–2004–024–00000–0) and by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST, R01–2005–000–10711–0) and by the Korean Ministry of Science and Technology through the Cavendish-KAIST Research Cooperation Program.",

year = "2007",

doi = "10.1063/1.2743728",

language = "English",

volume = "101",

journal = "Journal of Applied Physics",

issn = "0021-8979",

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T2 - Anomalous Hall effect

AU - Shim, Wooyoung

AU - Lee, Kyoung Il

AU - Lee, Wooyoung

AU - Jeon, Kyung Ah

AU - Lee, Sang Yeol

AU - Jung, Myung Hwa

N1 - Funding Information: This work was supported by KOSEF through the National Core Research Center for Nanomedical Technology (R15–2004–024–00000–0) and by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST, R01–2005–000–10711–0) and by the Korean Ministry of Science and Technology through the Cavendish-KAIST Research Cooperation Program.

PY - 2007

Y1 - 2007

N2 - The intrinsic origin of the ferromagnetic ordering in Zn1-x Mnx O thin films grown by pulsed-laser deposition was investigated. The ferromagnetic behaviors for a Zn1-x Mnx O (x=0.26) film grown at 700 °C under oxygen pressures of 10-1 Torr were observed at 4 and 300 K. The anomalous Hall effect (AHE) was found at temperatures of up to 210 K for the Zn0.74 Mn0.26 O thin film. The anomalous Hall coefficients (RA) were determined to be approximately proportional to the square of resistivity in the low field region, indicating the side-jump process for the AHE. Our results provide direct experimental evidence that a carrier-mediated mechanism is responsible for the ferromagnetic ordering in Zn1-x Mnx O thin films grown by pulsed-laser deposition.

AB - The intrinsic origin of the ferromagnetic ordering in Zn1-x Mnx O thin films grown by pulsed-laser deposition was investigated. The ferromagnetic behaviors for a Zn1-x Mnx O (x=0.26) film grown at 700 °C under oxygen pressures of 10-1 Torr were observed at 4 and 300 K. The anomalous Hall effect (AHE) was found at temperatures of up to 210 K for the Zn0.74 Mn0.26 O thin film. The anomalous Hall coefficients (RA) were determined to be approximately proportional to the square of resistivity in the low field region, indicating the side-jump process for the AHE. Our results provide direct experimental evidence that a carrier-mediated mechanism is responsible for the ferromagnetic ordering in Zn1-x Mnx O thin films grown by pulsed-laser deposition.

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