Evidence for carrier-induced ferromagnetic ordering in Zn 1-xMnxO thin films: Anomalous Hall effect

Wooyoung Shim, Kyoung Il Lee, Wooyoung Lee, Kyung Ah Jeon, Sang Yeol Lee, Myung Hwa Jung

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The intrinsic origin of the ferromagnetic ordering in Zn1-x Mnx O thin films grown by pulsed-laser deposition was investigated. The ferromagnetic behaviors for a Zn1-x Mnx O (x=0.26) film grown at 700 °C under oxygen pressures of 10-1 Torr were observed at 4 and 300 K. The anomalous Hall effect (AHE) was found at temperatures of up to 210 K for the Zn0.74 Mn0.26 O thin film. The anomalous Hall coefficients (RA) were determined to be approximately proportional to the square of resistivity in the low field region, indicating the side-jump process for the AHE. Our results provide direct experimental evidence that a carrier-mediated mechanism is responsible for the ferromagnetic ordering in Zn1-x Mnx O thin films grown by pulsed-laser deposition.

Original languageEnglish
Article number123908
JournalJournal of Applied Physics
Volume101
Issue number12
DOIs
Publication statusPublished - 2007 Aug 2

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Evidence for carrier-induced ferromagnetic ordering in Zn <sub>1-x</sub>Mn<sub>x</sub>O thin films: Anomalous Hall effect'. Together they form a unique fingerprint.

  • Cite this