Evidence for O2p hole-driven conductivity in La1−xSrxMnO3 (0 ≤ x ≤ 0.7) and La0.7Sr0.3MnOz thin films

Honglyoul Ju, Hyunchul Sohn, Kannan M. Krishnan

Research output: Contribution to journalArticle

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Abstract

Oxygen K-edge electron-energy-loss spectra have been measured for La1−xSrxMnO3 (0 ≤ x ≤ 0.7) and La0.7Sr0.3MnOz thin films as a function of x and z. The spectra show a prepeak at the Fermi level, corresponding to transitions to empty states in the O2p band, at the threshold of the K edge around 529 eV. This prepeak systematically increases with an increase in conductivity through divalent doping (x) or oxygen content (z). This confirms that these materials are charge-transfer-type oxides with carriers having significant oxygen 2p hole character. We argue that, the double exchange mechanism has to include the role of oxygen hole density to satisfactorily describe their transport properties.

Original languageEnglish
Pages (from-to)3230-3233
Number of pages4
JournalPhysical Review Letters
Volume79
Issue number17
DOIs
Publication statusPublished - 1997 Jan 1

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conductivity
oxygen
thin films
energy dissipation
transport properties
charge transfer
electron energy
thresholds
oxides

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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title = "Evidence for O2p hole-driven conductivity in La1−xSrxMnO3 (0 ≤ x ≤ 0.7) and La0.7Sr0.3MnOz thin films",
abstract = "Oxygen K-edge electron-energy-loss spectra have been measured for La1−xSrxMnO3 (0 ≤ x ≤ 0.7) and La0.7Sr0.3MnOz thin films as a function of x and z. The spectra show a prepeak at the Fermi level, corresponding to transitions to empty states in the O2p band, at the threshold of the K edge around 529 eV. This prepeak systematically increases with an increase in conductivity through divalent doping (x) or oxygen content (z). This confirms that these materials are charge-transfer-type oxides with carriers having significant oxygen 2p hole character. We argue that, the double exchange mechanism has to include the role of oxygen hole density to satisfactorily describe their transport properties.",
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Evidence for O2p hole-driven conductivity in La1−xSrxMnO3 (0 ≤ x ≤ 0.7) and La0.7Sr0.3MnOz thin films. / Ju, Honglyoul; Sohn, Hyunchul; Krishnan, Kannan M.

In: Physical Review Letters, Vol. 79, No. 17, 01.01.1997, p. 3230-3233.

Research output: Contribution to journalArticle

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T1 - Evidence for O2p hole-driven conductivity in La1−xSrxMnO3 (0 ≤ x ≤ 0.7) and La0.7Sr0.3MnOz thin films

AU - Ju, Honglyoul

AU - Sohn, Hyunchul

AU - Krishnan, Kannan M.

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AB - Oxygen K-edge electron-energy-loss spectra have been measured for La1−xSrxMnO3 (0 ≤ x ≤ 0.7) and La0.7Sr0.3MnOz thin films as a function of x and z. The spectra show a prepeak at the Fermi level, corresponding to transitions to empty states in the O2p band, at the threshold of the K edge around 529 eV. This prepeak systematically increases with an increase in conductivity through divalent doping (x) or oxygen content (z). This confirms that these materials are charge-transfer-type oxides with carriers having significant oxygen 2p hole character. We argue that, the double exchange mechanism has to include the role of oxygen hole density to satisfactorily describe their transport properties.

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