Evidence for the changes in hole injection mechanism with a CoPc hole injection layer

Dongguen Shin, Jeihyun Lee, Hyunbok Lee, Hyein Kim, Yeonjin Yi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The hole injection in hole-only devices with the structures of Al/N,N′-bis(1-naphthyle)-N,N′-diphenyl-1,1′-biphenyl-4, 4′-diamine (NPB)/ITO and Al/NPB/cobalt phthalocyanine (CoPc)/ITO were analyzed. With the combined analysis of current density-voltage and impedance measurement, the charge injection mechanism based on the injection limited current model was investigated. The NPB single layer device shows Richardson-Schottky type thermionic emission in the entire applied bias range. On the other hand, the device with the CoPc hole injection layer shows thermionic emission until the applied bias reaches 3.7 V. Increasing the bias further, Fowler-Nordheim tunneling dominates the charge injection. The changes of hole injection mechanism were discussed by evaluating the energy level changes with internal field distributions.

Original languageEnglish
Pages (from-to)778-783
Number of pages6
JournalCurrent Applied Physics
Volume14
Issue number5
DOIs
Publication statusPublished - 2014 May 1

Fingerprint

Thermionic emission
Charge injection
Cobalt
cobalt
injection
Field emission
Electron energy levels
Diamines
Current density
thermionic emission
ITO (semiconductors)
Electric potential
impedance measurement
diamines
electrical measurement
cobalt phthalocyanine
4-nitrophenethyl bromide
energy levels
current density
diphenyl

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Shin, Dongguen ; Lee, Jeihyun ; Lee, Hyunbok ; Kim, Hyein ; Yi, Yeonjin. / Evidence for the changes in hole injection mechanism with a CoPc hole injection layer. In: Current Applied Physics. 2014 ; Vol. 14, No. 5. pp. 778-783.
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Evidence for the changes in hole injection mechanism with a CoPc hole injection layer. / Shin, Dongguen; Lee, Jeihyun; Lee, Hyunbok; Kim, Hyein; Yi, Yeonjin.

In: Current Applied Physics, Vol. 14, No. 5, 01.05.2014, p. 778-783.

Research output: Contribution to journalArticle

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T1 - Evidence for the changes in hole injection mechanism with a CoPc hole injection layer

AU - Shin, Dongguen

AU - Lee, Jeihyun

AU - Lee, Hyunbok

AU - Kim, Hyein

AU - Yi, Yeonjin

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AB - The hole injection in hole-only devices with the structures of Al/N,N′-bis(1-naphthyle)-N,N′-diphenyl-1,1′-biphenyl-4, 4′-diamine (NPB)/ITO and Al/NPB/cobalt phthalocyanine (CoPc)/ITO were analyzed. With the combined analysis of current density-voltage and impedance measurement, the charge injection mechanism based on the injection limited current model was investigated. The NPB single layer device shows Richardson-Schottky type thermionic emission in the entire applied bias range. On the other hand, the device with the CoPc hole injection layer shows thermionic emission until the applied bias reaches 3.7 V. Increasing the bias further, Fowler-Nordheim tunneling dominates the charge injection. The changes of hole injection mechanism were discussed by evaluating the energy level changes with internal field distributions.

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