Evidence for the formation of n+-GaAs layer in Pd/Ge ohmic contact to n-type GaAs

Jong Lam Lee, Yi Tae Kim, Joon Seop Kwak, Hong Koo Baik, Akira Uedono, Shoichiro Tanigawa

Research output: Contribution to journalArticle

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Abstract

Microstructural reactions of PdGe ohmic contact to n-type GaAs were investigated using x-ray diffraction, Auger electron spectroscopy, and slow positron beam. The results were compared with electrical properties to interpret the ohmic contact formation mechanism for the Ge/Pd/n-type GaAs system. The lowest contact resistance of 1.7 Ω mm and the formation of a PdGe compound are observed at the annealing temperature of 240 °C. Slow positron beam results show that Ga vacancies are produced below PdGe during the formation of PdGe ohmic contact to n-type GaAs. This means the existence of n+ -GaAs layer below PdGe because Ga vacancy concentration increases with n-type impurity concentration. This supports that the n+-GaAs layer is a regrown layer decomposed from PdxGaAs containing excess Ge atoms during annealing.

Original languageEnglish
Pages (from-to)5460-5464
Number of pages5
JournalJournal of Applied Physics
Volume82
Issue number11
DOIs
Publication statusPublished - 1997 Dec 1

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electric contacts
positrons
annealing
contact resistance
Auger spectroscopy
electron spectroscopy
x ray diffraction
electrical properties
impurities
atoms
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Lee, Jong Lam ; Kim, Yi Tae ; Kwak, Joon Seop ; Baik, Hong Koo ; Uedono, Akira ; Tanigawa, Shoichiro. / Evidence for the formation of n+-GaAs layer in Pd/Ge ohmic contact to n-type GaAs. In: Journal of Applied Physics. 1997 ; Vol. 82, No. 11. pp. 5460-5464.
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abstract = "Microstructural reactions of PdGe ohmic contact to n-type GaAs were investigated using x-ray diffraction, Auger electron spectroscopy, and slow positron beam. The results were compared with electrical properties to interpret the ohmic contact formation mechanism for the Ge/Pd/n-type GaAs system. The lowest contact resistance of 1.7 Ω mm and the formation of a PdGe compound are observed at the annealing temperature of 240 °C. Slow positron beam results show that Ga vacancies are produced below PdGe during the formation of PdGe ohmic contact to n-type GaAs. This means the existence of n+ -GaAs layer below PdGe because Ga vacancy concentration increases with n-type impurity concentration. This supports that the n+-GaAs layer is a regrown layer decomposed from PdxGaAs containing excess Ge atoms during annealing.",
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Evidence for the formation of n+-GaAs layer in Pd/Ge ohmic contact to n-type GaAs. / Lee, Jong Lam; Kim, Yi Tae; Kwak, Joon Seop; Baik, Hong Koo; Uedono, Akira; Tanigawa, Shoichiro.

In: Journal of Applied Physics, Vol. 82, No. 11, 01.12.1997, p. 5460-5464.

Research output: Contribution to journalArticle

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AU - Lee, Jong Lam

AU - Kim, Yi Tae

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