Evidence of the C 60 /Cu contact formation after thermal treatment

Sangwan Cho, J. H. Seo, C. Y. Kim, Kyung-hwa Yoo, KwangHo Jeong, C. N. Whang, Yeonjin Yi, S. J. Kang, M. Noh

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The origin of the lowered electron injection barrier height of C60 Cu was investigated by in situ ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy (XPS). The onset of the highest occupied molecular orbital level was shifted by 0.2 eV toward high binding energy upon the heat treatment, resulting in the improved injection characteristics of the device. Moreover, an unexpected gap state has been observed at 1.2 eV below the Fermi level. The XPS core-level spectra revealed that the chemical reaction between C60 and Cu at the interface induced the gap state after heat treatment. The gap state pinned the Fermi level close to the lowest unoccupied molecular orbital of C60. We obtained the complete energy level diagram of C60 Cu before and after the heat treatment.

Original languageEnglish
Article number151103
JournalApplied Physics Letters
Volume88
Issue number15
DOIs
Publication statusPublished - 2006 Apr 10

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heat treatment
photoelectron spectroscopy
x ray spectroscopy
molecular orbitals
injection
ultraviolet spectroscopy
chemical reactions
binding energy
energy levels
diagrams
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{41709989ca0c44a29e8f79d85b9a9284,
title = "Evidence of the C 60 /Cu contact formation after thermal treatment",
abstract = "The origin of the lowered electron injection barrier height of C60 Cu was investigated by in situ ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy (XPS). The onset of the highest occupied molecular orbital level was shifted by 0.2 eV toward high binding energy upon the heat treatment, resulting in the improved injection characteristics of the device. Moreover, an unexpected gap state has been observed at 1.2 eV below the Fermi level. The XPS core-level spectra revealed that the chemical reaction between C60 and Cu at the interface induced the gap state after heat treatment. The gap state pinned the Fermi level close to the lowest unoccupied molecular orbital of C60. We obtained the complete energy level diagram of C60 Cu before and after the heat treatment.",
author = "Sangwan Cho and Seo, {J. H.} and Kim, {C. Y.} and Kyung-hwa Yoo and KwangHo Jeong and Whang, {C. N.} and Yeonjin Yi and Kang, {S. J.} and M. Noh",
year = "2006",
month = "4",
day = "10",
doi = "10.1063/1.2193038",
language = "English",
volume = "88",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "15",

}

Evidence of the C 60 /Cu contact formation after thermal treatment . / Cho, Sangwan; Seo, J. H.; Kim, C. Y.; Yoo, Kyung-hwa; Jeong, KwangHo; Whang, C. N.; Yi, Yeonjin; Kang, S. J.; Noh, M.

In: Applied Physics Letters, Vol. 88, No. 15, 151103, 10.04.2006.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Evidence of the C 60 /Cu contact formation after thermal treatment

AU - Cho, Sangwan

AU - Seo, J. H.

AU - Kim, C. Y.

AU - Yoo, Kyung-hwa

AU - Jeong, KwangHo

AU - Whang, C. N.

AU - Yi, Yeonjin

AU - Kang, S. J.

AU - Noh, M.

PY - 2006/4/10

Y1 - 2006/4/10

N2 - The origin of the lowered electron injection barrier height of C60 Cu was investigated by in situ ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy (XPS). The onset of the highest occupied molecular orbital level was shifted by 0.2 eV toward high binding energy upon the heat treatment, resulting in the improved injection characteristics of the device. Moreover, an unexpected gap state has been observed at 1.2 eV below the Fermi level. The XPS core-level spectra revealed that the chemical reaction between C60 and Cu at the interface induced the gap state after heat treatment. The gap state pinned the Fermi level close to the lowest unoccupied molecular orbital of C60. We obtained the complete energy level diagram of C60 Cu before and after the heat treatment.

AB - The origin of the lowered electron injection barrier height of C60 Cu was investigated by in situ ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy (XPS). The onset of the highest occupied molecular orbital level was shifted by 0.2 eV toward high binding energy upon the heat treatment, resulting in the improved injection characteristics of the device. Moreover, an unexpected gap state has been observed at 1.2 eV below the Fermi level. The XPS core-level spectra revealed that the chemical reaction between C60 and Cu at the interface induced the gap state after heat treatment. The gap state pinned the Fermi level close to the lowest unoccupied molecular orbital of C60. We obtained the complete energy level diagram of C60 Cu before and after the heat treatment.

UR - http://www.scopus.com/inward/record.url?scp=33646147358&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646147358&partnerID=8YFLogxK

U2 - 10.1063/1.2193038

DO - 10.1063/1.2193038

M3 - Article

AN - SCOPUS:33646147358

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 15

M1 - 151103

ER -