Evolution of sputtered HfO2 thin films upon annealing

S. Nam, S. W. Nam, J. H. Yoo, D. H. Ko, Ja Hum Ku, Siyoung Choi

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

We investigated the evolution of the physical and electrical properties of HfO2 thin films deposited by the reactive DC magnetron sputtering method on the (100) silicon substrate upon annealing. The HfO2 thin films deposited at room temperature were amorphous, while the films after annealing were poly crystalline. The crystallization temperature of the HfO2 thin films was dependent on the annealing methods (RTF or Furnace) and ambient (nitrogen or oxygen). The microstructures of HfO2 thin gate oxides of Tox <15 A thick were analyzed by HRTEM, XPS and XRD. We also focused on the interfacial layer between HfO2 thin films and silicon substrates. Due to its high oxygen diffusivity, any annealing led to oxygen diffusion rapidly through the HfO2 films. The EOT increased upon annealing due to the increased SiO2-containing layer. The HfO2 thin films deposited at room temperature have the undesirable interfacial states due to the surface damage by sputtering. We found that the HfO2 thin films <15 A thick were optimized by RTP or furnace annealing.

Original languageEnglish
Pages (from-to)221-226
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume716
Publication statusPublished - 2002 Dec 1
EventSilicon Materials - Processing, Characterization and Reliability - San Francisco, CA, United States
Duration: 2002 Apr 12002 Apr 5

Fingerprint

Annealing
Thin films
annealing
thin films
Silicon
Oxygen
furnaces
Furnaces
oxygen
silicon
room temperature
Substrates
Crystallization
Magnetron sputtering
Temperature
Oxides
diffusivity
Sputtering
magnetron sputtering
Electric properties

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Nam, S., Nam, S. W., Yoo, J. H., Ko, D. H., Ku, J. H., & Choi, S. (2002). Evolution of sputtered HfO2 thin films upon annealing. Materials Research Society Symposium - Proceedings, 716, 221-226.
Nam, S. ; Nam, S. W. ; Yoo, J. H. ; Ko, D. H. ; Ku, Ja Hum ; Choi, Siyoung. / Evolution of sputtered HfO2 thin films upon annealing. In: Materials Research Society Symposium - Proceedings. 2002 ; Vol. 716. pp. 221-226.
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Nam, S, Nam, SW, Yoo, JH, Ko, DH, Ku, JH & Choi, S 2002, 'Evolution of sputtered HfO2 thin films upon annealing', Materials Research Society Symposium - Proceedings, vol. 716, pp. 221-226.

Evolution of sputtered HfO2 thin films upon annealing. / Nam, S.; Nam, S. W.; Yoo, J. H.; Ko, D. H.; Ku, Ja Hum; Choi, Siyoung.

In: Materials Research Society Symposium - Proceedings, Vol. 716, 01.12.2002, p. 221-226.

Research output: Contribution to journalConference article

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N2 - We investigated the evolution of the physical and electrical properties of HfO2 thin films deposited by the reactive DC magnetron sputtering method on the (100) silicon substrate upon annealing. The HfO2 thin films deposited at room temperature were amorphous, while the films after annealing were poly crystalline. The crystallization temperature of the HfO2 thin films was dependent on the annealing methods (RTF or Furnace) and ambient (nitrogen or oxygen). The microstructures of HfO2 thin gate oxides of Tox <15 A thick were analyzed by HRTEM, XPS and XRD. We also focused on the interfacial layer between HfO2 thin films and silicon substrates. Due to its high oxygen diffusivity, any annealing led to oxygen diffusion rapidly through the HfO2 films. The EOT increased upon annealing due to the increased SiO2-containing layer. The HfO2 thin films deposited at room temperature have the undesirable interfacial states due to the surface damage by sputtering. We found that the HfO2 thin films <15 A thick were optimized by RTP or furnace annealing.

AB - We investigated the evolution of the physical and electrical properties of HfO2 thin films deposited by the reactive DC magnetron sputtering method on the (100) silicon substrate upon annealing. The HfO2 thin films deposited at room temperature were amorphous, while the films after annealing were poly crystalline. The crystallization temperature of the HfO2 thin films was dependent on the annealing methods (RTF or Furnace) and ambient (nitrogen or oxygen). The microstructures of HfO2 thin gate oxides of Tox <15 A thick were analyzed by HRTEM, XPS and XRD. We also focused on the interfacial layer between HfO2 thin films and silicon substrates. Due to its high oxygen diffusivity, any annealing led to oxygen diffusion rapidly through the HfO2 films. The EOT increased upon annealing due to the increased SiO2-containing layer. The HfO2 thin films deposited at room temperature have the undesirable interfacial states due to the surface damage by sputtering. We found that the HfO2 thin films <15 A thick were optimized by RTP or furnace annealing.

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