Evolution of surface morphology and strain in low-temperature AlN grown by plasma-assisted molecular beam epitaxy

Kyu Hwan Shim, Jae Min Myoung, Oleg Gluschenkov, Kyekyoon Kim, Chinkyo Kim, Ian K. Robinson

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The evolution of stress-driven surface roughening in low-temperature (LT) grown AlN has been investigated in a wide range of film thicknesses using plasma assisted molecular beam epitaxy and atomic force microscopy analysis. The relaxation of residual strain causing morphological instability after approximately 50 nm thickness represents the kinetic stabilization of LT growth. LT-AlN layers with thicknesses of approximately 20 nm provide excellent surface smoothness of <0.9 nm and large relaxation, approximately 94% of the lattice mismatch strain. AlN films thicker than 50 nm, for which the scaling exponents are greater than 1, revealed stress-driven surface roughening with coherent islands. The implementation of thick LT-AlN buffer layers is limited by the stress-driven surface roughening above approximately 50 nm thickness.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume37
Issue number3 B
Publication statusPublished - 1998 Jan 1

Fingerprint

Molecular beam epitaxy
Surface morphology
molecular beam epitaxy
Plasmas
Temperature
Lattice mismatch
Growth temperature
Buffer layers
Thick films
thick films
Film thickness
Atomic force microscopy
film thickness
Stabilization
buffers
stabilization
atomic force microscopy
exponents
scaling
Kinetics

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

@article{649e574199334ffbaf73f5049b2e9e02,
title = "Evolution of surface morphology and strain in low-temperature AlN grown by plasma-assisted molecular beam epitaxy",
abstract = "The evolution of stress-driven surface roughening in low-temperature (LT) grown AlN has been investigated in a wide range of film thicknesses using plasma assisted molecular beam epitaxy and atomic force microscopy analysis. The relaxation of residual strain causing morphological instability after approximately 50 nm thickness represents the kinetic stabilization of LT growth. LT-AlN layers with thicknesses of approximately 20 nm provide excellent surface smoothness of <0.9 nm and large relaxation, approximately 94{\%} of the lattice mismatch strain. AlN films thicker than 50 nm, for which the scaling exponents are greater than 1, revealed stress-driven surface roughening with coherent islands. The implementation of thick LT-AlN buffer layers is limited by the stress-driven surface roughening above approximately 50 nm thickness.",
author = "Shim, {Kyu Hwan} and Myoung, {Jae Min} and Oleg Gluschenkov and Kyekyoon Kim and Chinkyo Kim and Robinson, {Ian K.}",
year = "1998",
month = "1",
day = "1",
language = "English",
volume = "37",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "3 B",

}

Evolution of surface morphology and strain in low-temperature AlN grown by plasma-assisted molecular beam epitaxy. / Shim, Kyu Hwan; Myoung, Jae Min; Gluschenkov, Oleg; Kim, Kyekyoon; Kim, Chinkyo; Robinson, Ian K.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 37, No. 3 B, 01.01.1998.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Evolution of surface morphology and strain in low-temperature AlN grown by plasma-assisted molecular beam epitaxy

AU - Shim, Kyu Hwan

AU - Myoung, Jae Min

AU - Gluschenkov, Oleg

AU - Kim, Kyekyoon

AU - Kim, Chinkyo

AU - Robinson, Ian K.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - The evolution of stress-driven surface roughening in low-temperature (LT) grown AlN has been investigated in a wide range of film thicknesses using plasma assisted molecular beam epitaxy and atomic force microscopy analysis. The relaxation of residual strain causing morphological instability after approximately 50 nm thickness represents the kinetic stabilization of LT growth. LT-AlN layers with thicknesses of approximately 20 nm provide excellent surface smoothness of <0.9 nm and large relaxation, approximately 94% of the lattice mismatch strain. AlN films thicker than 50 nm, for which the scaling exponents are greater than 1, revealed stress-driven surface roughening with coherent islands. The implementation of thick LT-AlN buffer layers is limited by the stress-driven surface roughening above approximately 50 nm thickness.

AB - The evolution of stress-driven surface roughening in low-temperature (LT) grown AlN has been investigated in a wide range of film thicknesses using plasma assisted molecular beam epitaxy and atomic force microscopy analysis. The relaxation of residual strain causing morphological instability after approximately 50 nm thickness represents the kinetic stabilization of LT growth. LT-AlN layers with thicknesses of approximately 20 nm provide excellent surface smoothness of <0.9 nm and large relaxation, approximately 94% of the lattice mismatch strain. AlN films thicker than 50 nm, for which the scaling exponents are greater than 1, revealed stress-driven surface roughening with coherent islands. The implementation of thick LT-AlN buffer layers is limited by the stress-driven surface roughening above approximately 50 nm thickness.

UR - http://www.scopus.com/inward/record.url?scp=0032022949&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032022949&partnerID=8YFLogxK

M3 - Article

VL - 37

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 3 B

ER -