Evolution of tungsten-oxide whiskers synthesized by a rapid thermal-annealing treatment

M. H. Cho, S. A. Park, K. D. Yang, I. W. Lyo, K. Jeong, S. K. Kang, D. H. Ko, K. W. Kwon, J. H. Ku, S. Y. Choi, H. J. Shin

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

Rapid thermal annealing was used to synthesize tungsten-oxide whiskers. W/WN films as a metal gate were deposited on a poly Si (1800 Å)/oxidized Si (100) substrate by sputtering method. The sputtering gases used in the growth of W and WN were pure Ar and a mixture of Ar and N2, respectively. The change in the crystalline structure and chemical state suggests that whisker formation is subsequent to nucleation and growth of whisker on the nucleation sites through dissociated W oxide.

Original languageEnglish
Pages (from-to)1084-1087
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number3
Publication statusPublished - 2004 May 1

Fingerprint

tungsten oxides
Rapid thermal annealing
Sputtering
Tungsten
Nucleation
sputtering
nucleation
Crystal whiskers
annealing
Oxides
Polysilicon
Crystalline materials
oxides
Substrates
Metals
Gases
gases
metals

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Cho, M. H. ; Park, S. A. ; Yang, K. D. ; Lyo, I. W. ; Jeong, K. ; Kang, S. K. ; Ko, D. H. ; Kwon, K. W. ; Ku, J. H. ; Choi, S. Y. ; Shin, H. J. / Evolution of tungsten-oxide whiskers synthesized by a rapid thermal-annealing treatment. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2004 ; Vol. 22, No. 3. pp. 1084-1087.
@article{45f269e9040f42a5aafa2634f86787dc,
title = "Evolution of tungsten-oxide whiskers synthesized by a rapid thermal-annealing treatment",
abstract = "Rapid thermal annealing was used to synthesize tungsten-oxide whiskers. W/WN films as a metal gate were deposited on a poly Si (1800 {\AA})/oxidized Si (100) substrate by sputtering method. The sputtering gases used in the growth of W and WN were pure Ar and a mixture of Ar and N2, respectively. The change in the crystalline structure and chemical state suggests that whisker formation is subsequent to nucleation and growth of whisker on the nucleation sites through dissociated W oxide.",
author = "Cho, {M. H.} and Park, {S. A.} and Yang, {K. D.} and Lyo, {I. W.} and K. Jeong and Kang, {S. K.} and Ko, {D. H.} and Kwon, {K. W.} and Ku, {J. H.} and Choi, {S. Y.} and Shin, {H. J.}",
year = "2004",
month = "5",
day = "1",
language = "English",
volume = "22",
pages = "1084--1087",
journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",
issn = "1071-1023",
number = "3",

}

Evolution of tungsten-oxide whiskers synthesized by a rapid thermal-annealing treatment. / Cho, M. H.; Park, S. A.; Yang, K. D.; Lyo, I. W.; Jeong, K.; Kang, S. K.; Ko, D. H.; Kwon, K. W.; Ku, J. H.; Choi, S. Y.; Shin, H. J.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 3, 01.05.2004, p. 1084-1087.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Evolution of tungsten-oxide whiskers synthesized by a rapid thermal-annealing treatment

AU - Cho, M. H.

AU - Park, S. A.

AU - Yang, K. D.

AU - Lyo, I. W.

AU - Jeong, K.

AU - Kang, S. K.

AU - Ko, D. H.

AU - Kwon, K. W.

AU - Ku, J. H.

AU - Choi, S. Y.

AU - Shin, H. J.

PY - 2004/5/1

Y1 - 2004/5/1

N2 - Rapid thermal annealing was used to synthesize tungsten-oxide whiskers. W/WN films as a metal gate were deposited on a poly Si (1800 Å)/oxidized Si (100) substrate by sputtering method. The sputtering gases used in the growth of W and WN were pure Ar and a mixture of Ar and N2, respectively. The change in the crystalline structure and chemical state suggests that whisker formation is subsequent to nucleation and growth of whisker on the nucleation sites through dissociated W oxide.

AB - Rapid thermal annealing was used to synthesize tungsten-oxide whiskers. W/WN films as a metal gate were deposited on a poly Si (1800 Å)/oxidized Si (100) substrate by sputtering method. The sputtering gases used in the growth of W and WN were pure Ar and a mixture of Ar and N2, respectively. The change in the crystalline structure and chemical state suggests that whisker formation is subsequent to nucleation and growth of whisker on the nucleation sites through dissociated W oxide.

UR - http://www.scopus.com/inward/record.url?scp=3242661030&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3242661030&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:3242661030

VL - 22

SP - 1084

EP - 1087

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 3

ER -