Evolution of tungsten-oxide whiskers synthesized by a rapid thermal-annealing treatment

M. H. Cho, S. A. Park, K. D. Yang, I. W. Lyo, K. Jeong, S. K. Kang, D. H. Ko, K. W. Kwon, J. H. Ku, S. Y. Choi, H. J. Shin

Research output: Contribution to journalArticle

26 Citations (Scopus)


Rapid thermal annealing was used to synthesize tungsten-oxide whiskers. W/WN films as a metal gate were deposited on a poly Si (1800 Å)/oxidized Si (100) substrate by sputtering method. The sputtering gases used in the growth of W and WN were pure Ar and a mixture of Ar and N2, respectively. The change in the crystalline structure and chemical state suggests that whisker formation is subsequent to nucleation and growth of whisker on the nucleation sites through dissociated W oxide.

Original languageEnglish
Pages (from-to)1084-1087
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number3
Publication statusPublished - 2004 May 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Evolution of tungsten-oxide whiskers synthesized by a rapid thermal-annealing treatment'. Together they form a unique fingerprint.

  • Cite this