Rapid thermal annealing was used to synthesize tungsten-oxide whiskers. W/WN films as a metal gate were deposited on a poly Si (1800 Å)/oxidized Si (100) substrate by sputtering method. The sputtering gases used in the growth of W and WN were pure Ar and a mixture of Ar and N2, respectively. The change in the crystalline structure and chemical state suggests that whisker formation is subsequent to nucleation and growth of whisker on the nucleation sites through dissociated W oxide.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2004 May 1|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering