Exact solutions to the tight-binding model for the conductance of carbon nanotubes

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

The exact form of the Green's function in the armchair-type carbon nanotube with the tight-binding Hamiltonian is derived and the analytic expressions for the conductance of the nanotube with local perturbations are obtained. The results show the explicit functional dependence of the conductance on the Fermi level, the tubular radius, and the strength of the perturbations. The change of on-site energy at one or two atomic sites as an examples is considered. Eventhough, the exact form of the Green's function and the computational scheme for the conductance may be used for any kinds of local defects including topological defects, such as the pentagon-heptagon-pair defect.

Original languageEnglish
Pages (from-to)385-390
Number of pages6
JournalSolid State Communications
Volume111
Issue number7
DOIs
Publication statusPublished - 1999 Jul 14

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Carbon Nanotubes
Carbon nanotubes
carbon nanotubes
Green's function
Defects
defects
Green's functions
Hamiltonians
perturbation
Fermi level
Nanotubes
nanotubes
radii
energy

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

@article{bda498f55b0446b48728f09281be9bee,
title = "Exact solutions to the tight-binding model for the conductance of carbon nanotubes",
abstract = "The exact form of the Green's function in the armchair-type carbon nanotube with the tight-binding Hamiltonian is derived and the analytic expressions for the conductance of the nanotube with local perturbations are obtained. The results show the explicit functional dependence of the conductance on the Fermi level, the tubular radius, and the strength of the perturbations. The change of on-site energy at one or two atomic sites as an examples is considered. Eventhough, the exact form of the Green's function and the computational scheme for the conductance may be used for any kinds of local defects including topological defects, such as the pentagon-heptagon-pair defect.",
author = "Choi, {Hyoung Joon} and J. Ihm",
year = "1999",
month = "7",
day = "14",
doi = "10.1016/S0038-1098(99)00199-4",
language = "English",
volume = "111",
pages = "385--390",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",
number = "7",

}

Exact solutions to the tight-binding model for the conductance of carbon nanotubes. / Choi, Hyoung Joon; Ihm, J.

In: Solid State Communications, Vol. 111, No. 7, 14.07.1999, p. 385-390.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Exact solutions to the tight-binding model for the conductance of carbon nanotubes

AU - Choi, Hyoung Joon

AU - Ihm, J.

PY - 1999/7/14

Y1 - 1999/7/14

N2 - The exact form of the Green's function in the armchair-type carbon nanotube with the tight-binding Hamiltonian is derived and the analytic expressions for the conductance of the nanotube with local perturbations are obtained. The results show the explicit functional dependence of the conductance on the Fermi level, the tubular radius, and the strength of the perturbations. The change of on-site energy at one or two atomic sites as an examples is considered. Eventhough, the exact form of the Green's function and the computational scheme for the conductance may be used for any kinds of local defects including topological defects, such as the pentagon-heptagon-pair defect.

AB - The exact form of the Green's function in the armchair-type carbon nanotube with the tight-binding Hamiltonian is derived and the analytic expressions for the conductance of the nanotube with local perturbations are obtained. The results show the explicit functional dependence of the conductance on the Fermi level, the tubular radius, and the strength of the perturbations. The change of on-site energy at one or two atomic sites as an examples is considered. Eventhough, the exact form of the Green's function and the computational scheme for the conductance may be used for any kinds of local defects including topological defects, such as the pentagon-heptagon-pair defect.

UR - http://www.scopus.com/inward/record.url?scp=0344339169&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0344339169&partnerID=8YFLogxK

U2 - 10.1016/S0038-1098(99)00199-4

DO - 10.1016/S0038-1098(99)00199-4

M3 - Article

VL - 111

SP - 385

EP - 390

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 7

ER -