Exchange-biased ferromagnetic electrodes and their application to complementary spin transistors

Youn Ho Park, Jun Woo Choi, Joonyeon Chang, Heon Jin Choi, Hyun Cheol Koo

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Abstract Exchange biased Co84Fe16/Ir22Mn78 bilayers are designed for controlling the magnetization direction of ferromagnetic source and drain in the spin field effect transistor. Depending on the applied field direction during the sputtering, two different orientations of exchange bias fields, +35.5 mT and -36.3 mT are obtained. Using these Co84Fe16/Ir22Mn78 electrodes, two types of spin transistors, which have roles of n and p-type transistors in the conventional complementary scheme, are implemented. Using the parameters extracted from experimental data, the complementary inverter operation is also presented.

Original languageEnglish
Article number3889
Pages (from-to)S32-S35
JournalCurrent Applied Physics
Volume15
Issue numberS1
DOIs
Publication statusPublished - 2015 Aug 3

Fingerprint

Transistors
transistors
Electrodes
electrodes
Field effect transistors
Sputtering
Magnetization
field effect transistors
sputtering
magnetization
Direction compound

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Park, Youn Ho ; Choi, Jun Woo ; Chang, Joonyeon ; Choi, Heon Jin ; Koo, Hyun Cheol. / Exchange-biased ferromagnetic electrodes and their application to complementary spin transistors. In: Current Applied Physics. 2015 ; Vol. 15, No. S1. pp. S32-S35.
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Exchange-biased ferromagnetic electrodes and their application to complementary spin transistors. / Park, Youn Ho; Choi, Jun Woo; Chang, Joonyeon; Choi, Heon Jin; Koo, Hyun Cheol.

In: Current Applied Physics, Vol. 15, No. S1, 3889, 03.08.2015, p. S32-S35.

Research output: Contribution to journalArticle

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T1 - Exchange-biased ferromagnetic electrodes and their application to complementary spin transistors

AU - Park, Youn Ho

AU - Choi, Jun Woo

AU - Chang, Joonyeon

AU - Choi, Heon Jin

AU - Koo, Hyun Cheol

PY - 2015/8/3

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N2 - Abstract Exchange biased Co84Fe16/Ir22Mn78 bilayers are designed for controlling the magnetization direction of ferromagnetic source and drain in the spin field effect transistor. Depending on the applied field direction during the sputtering, two different orientations of exchange bias fields, +35.5 mT and -36.3 mT are obtained. Using these Co84Fe16/Ir22Mn78 electrodes, two types of spin transistors, which have roles of n and p-type transistors in the conventional complementary scheme, are implemented. Using the parameters extracted from experimental data, the complementary inverter operation is also presented.

AB - Abstract Exchange biased Co84Fe16/Ir22Mn78 bilayers are designed for controlling the magnetization direction of ferromagnetic source and drain in the spin field effect transistor. Depending on the applied field direction during the sputtering, two different orientations of exchange bias fields, +35.5 mT and -36.3 mT are obtained. Using these Co84Fe16/Ir22Mn78 electrodes, two types of spin transistors, which have roles of n and p-type transistors in the conventional complementary scheme, are implemented. Using the parameters extracted from experimental data, the complementary inverter operation is also presented.

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