Excimer laser annealed low temperature solution-processed oxide thin film transistors

Jeong Soo Lee, Seung Min Song, Seung Hwan Cho, Moon Kyu Song, Yong Hoon Kim, Jang Yeon Kwon, Min Koo Han

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We have employed XeCl Excimer Laser Annealing (ELA) treatment on ZTO active layer in low temperature solution-processed Zinc Tin Oxide (ZTO) Thin Film Transistors (TFTs) with 300°C of annealing temperature. The threshold voltage decreased from 18.38 V to 4.78 V because of the increase of carrier concentration by reduction of Cl bonding by employing ELA treatment. The saturation mobility was also gradually improved from 0.04 cm 2/Vsec to 0.58 cm 2/Vsec because of the reduction of halide residues as trap states by employing ELA treatment. We have observed that the electrical characteristics of 300°C low temperature solution-processed ZTO TFTs could be improved by employing ELA treatment so that it is suitable for flexible display backplane such as glass or plastic substrate.

Original languageEnglish
Title of host publicationProceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
Pages135-138
Number of pages4
Publication statusPublished - 2012 Oct 31
Event19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 - Kyoto, Japan
Duration: 2012 Jul 42012 Jul 6

Other

Other19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
CountryJapan
CityKyoto
Period12/7/412/7/6

Fingerprint

Excimer lasers
Thin film transistors
Oxide films
Annealing
Zinc oxide
Tin oxides
Temperature
Flexible displays
Threshold voltage
Carrier concentration
Plastics
Glass
Substrates

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Lee, J. S., Song, S. M., Cho, S. H., Song, M. K., Kim, Y. H., Kwon, J. Y., & Han, M. K. (2012). Excimer laser annealed low temperature solution-processed oxide thin film transistors. In Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 (pp. 135-138). [6294862]
Lee, Jeong Soo ; Song, Seung Min ; Cho, Seung Hwan ; Song, Moon Kyu ; Kim, Yong Hoon ; Kwon, Jang Yeon ; Han, Min Koo. / Excimer laser annealed low temperature solution-processed oxide thin film transistors. Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012. 2012. pp. 135-138
@inproceedings{f0d17ba5a6f9483bb64a211071e9ea09,
title = "Excimer laser annealed low temperature solution-processed oxide thin film transistors",
abstract = "We have employed XeCl Excimer Laser Annealing (ELA) treatment on ZTO active layer in low temperature solution-processed Zinc Tin Oxide (ZTO) Thin Film Transistors (TFTs) with 300°C of annealing temperature. The threshold voltage decreased from 18.38 V to 4.78 V because of the increase of carrier concentration by reduction of Cl bonding by employing ELA treatment. The saturation mobility was also gradually improved from 0.04 cm 2/Vsec to 0.58 cm 2/Vsec because of the reduction of halide residues as trap states by employing ELA treatment. We have observed that the electrical characteristics of 300°C low temperature solution-processed ZTO TFTs could be improved by employing ELA treatment so that it is suitable for flexible display backplane such as glass or plastic substrate.",
author = "Lee, {Jeong Soo} and Song, {Seung Min} and Cho, {Seung Hwan} and Song, {Moon Kyu} and Kim, {Yong Hoon} and Kwon, {Jang Yeon} and Han, {Min Koo}",
year = "2012",
month = "10",
day = "31",
language = "English",
isbn = "9781467303996",
pages = "135--138",
booktitle = "Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012",

}

Lee, JS, Song, SM, Cho, SH, Song, MK, Kim, YH, Kwon, JY & Han, MK 2012, Excimer laser annealed low temperature solution-processed oxide thin film transistors. in Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012., 6294862, pp. 135-138, 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012, Kyoto, Japan, 12/7/4.

Excimer laser annealed low temperature solution-processed oxide thin film transistors. / Lee, Jeong Soo; Song, Seung Min; Cho, Seung Hwan; Song, Moon Kyu; Kim, Yong Hoon; Kwon, Jang Yeon; Han, Min Koo.

Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012. 2012. p. 135-138 6294862.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Excimer laser annealed low temperature solution-processed oxide thin film transistors

AU - Lee, Jeong Soo

AU - Song, Seung Min

AU - Cho, Seung Hwan

AU - Song, Moon Kyu

AU - Kim, Yong Hoon

AU - Kwon, Jang Yeon

AU - Han, Min Koo

PY - 2012/10/31

Y1 - 2012/10/31

N2 - We have employed XeCl Excimer Laser Annealing (ELA) treatment on ZTO active layer in low temperature solution-processed Zinc Tin Oxide (ZTO) Thin Film Transistors (TFTs) with 300°C of annealing temperature. The threshold voltage decreased from 18.38 V to 4.78 V because of the increase of carrier concentration by reduction of Cl bonding by employing ELA treatment. The saturation mobility was also gradually improved from 0.04 cm 2/Vsec to 0.58 cm 2/Vsec because of the reduction of halide residues as trap states by employing ELA treatment. We have observed that the electrical characteristics of 300°C low temperature solution-processed ZTO TFTs could be improved by employing ELA treatment so that it is suitable for flexible display backplane such as glass or plastic substrate.

AB - We have employed XeCl Excimer Laser Annealing (ELA) treatment on ZTO active layer in low temperature solution-processed Zinc Tin Oxide (ZTO) Thin Film Transistors (TFTs) with 300°C of annealing temperature. The threshold voltage decreased from 18.38 V to 4.78 V because of the increase of carrier concentration by reduction of Cl bonding by employing ELA treatment. The saturation mobility was also gradually improved from 0.04 cm 2/Vsec to 0.58 cm 2/Vsec because of the reduction of halide residues as trap states by employing ELA treatment. We have observed that the electrical characteristics of 300°C low temperature solution-processed ZTO TFTs could be improved by employing ELA treatment so that it is suitable for flexible display backplane such as glass or plastic substrate.

UR - http://www.scopus.com/inward/record.url?scp=84867916105&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84867916105&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84867916105

SN - 9781467303996

SP - 135

EP - 138

BT - Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012

ER -

Lee JS, Song SM, Cho SH, Song MK, Kim YH, Kwon JY et al. Excimer laser annealed low temperature solution-processed oxide thin film transistors. In Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012. 2012. p. 135-138. 6294862