Excimer laser annealing of PbZr0.4Ti0.6O3 thin film at low temperature

Wenxu Xianyu; Hans Se Young Cho; Jang Yeon Kwon; Huaxinag Yin; Takashi Noguchi

doi:10.1093/ietele/e89-c.10.1460

Excimer laser annealing of PbZr_0.4Ti_0.6O₃ thin film at low temperature

Wenxu Xianyu, Hans Se Young Cho, Jang Yeon Kwon, Huaxinag Yin, Takashi Noguchi

School of Integrated Technology

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

PbZr_0.4Ti_0.6O₃ (PZT) thin films with high crystallinity and high remanant polarization (P_r) have been fabricated by sol-gel deposition with pulsed excimer (XeCl) laser annealing at low process temperatures. The amorphous PZT films were prepared on Pt/Ti/SiO₂/Si substrates by a sol-gel method. The deposited amorphous PZT films were annealed at 550°C for 10 min. to initiate the nucleation of the PZT perovskite phase, and then annealed with an UV pulsed excimer laser (308 nm) heating at 400°C. X-ray diffraction (XRD) patterns show that 150-230 mJ/cm² range multi-shot excimer laser irradiation drastically improved the crystallinity of the PZT perovskite phase. Field emission SEM (FE SEM) image show that the PZT thin film has uniform-sized crystal grains. The ferroelectric properties were found to depend on the laser energy density and shot number.

Original language	English
Pages (from-to)	1460-1464
Number of pages	5
Journal	IEICE Transactions on Electronics
Volume	E89-C
Issue number	10
DOIs	https://doi.org/10.1093/ietele/e89-c.10.1460
Publication status	Published - 2006 Oct

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Xianyu, W., Cho, H. S. Y., Kwon, J. Y., Yin, H., & Noguchi, T. (2006). Excimer laser annealing of PbZr_0.4Ti_0.6O₃ thin film at low temperature. IEICE Transactions on Electronics, E89-C(10), 1460-1464. https://doi.org/10.1093/ietele/e89-c.10.1460

@article{fa33e0ea87a64f6c984880534f54c600,

title = "Excimer laser annealing of PbZr0.4Ti0.6O3 thin film at low temperature",

abstract = "PbZr0.4Ti0.6O3 (PZT) thin films with high crystallinity and high remanant polarization (Pr) have been fabricated by sol-gel deposition with pulsed excimer (XeCl) laser annealing at low process temperatures. The amorphous PZT films were prepared on Pt/Ti/SiO2/Si substrates by a sol-gel method. The deposited amorphous PZT films were annealed at 550°C for 10 min. to initiate the nucleation of the PZT perovskite phase, and then annealed with an UV pulsed excimer laser (308 nm) heating at 400°C. X-ray diffraction (XRD) patterns show that 150-230 mJ/cm2 range multi-shot excimer laser irradiation drastically improved the crystallinity of the PZT perovskite phase. Field emission SEM (FE SEM) image show that the PZT thin film has uniform-sized crystal grains. The ferroelectric properties were found to depend on the laser energy density and shot number.",

author = "Wenxu Xianyu and Cho, {Hans Se Young} and Kwon, {Jang Yeon} and Huaxinag Yin and Takashi Noguchi",

year = "2006",

month = oct,

doi = "10.1093/ietele/e89-c.10.1460",

language = "English",

volume = "E89-C",

pages = "1460--1464",

journal = "IEICE Transactions on Electronics",

issn = "0916-8524",

publisher = "Maruzen Co., Ltd/Maruzen Kabushikikaisha",

number = "10",

}

TY - JOUR

T1 - Excimer laser annealing of PbZr0.4Ti0.6O3 thin film at low temperature

AU - Xianyu, Wenxu

AU - Cho, Hans Se Young

AU - Kwon, Jang Yeon

AU - Yin, Huaxinag

AU - Noguchi, Takashi

PY - 2006/10

Y1 - 2006/10

N2 - PbZr0.4Ti0.6O3 (PZT) thin films with high crystallinity and high remanant polarization (Pr) have been fabricated by sol-gel deposition with pulsed excimer (XeCl) laser annealing at low process temperatures. The amorphous PZT films were prepared on Pt/Ti/SiO2/Si substrates by a sol-gel method. The deposited amorphous PZT films were annealed at 550°C for 10 min. to initiate the nucleation of the PZT perovskite phase, and then annealed with an UV pulsed excimer laser (308 nm) heating at 400°C. X-ray diffraction (XRD) patterns show that 150-230 mJ/cm2 range multi-shot excimer laser irradiation drastically improved the crystallinity of the PZT perovskite phase. Field emission SEM (FE SEM) image show that the PZT thin film has uniform-sized crystal grains. The ferroelectric properties were found to depend on the laser energy density and shot number.

AB - PbZr0.4Ti0.6O3 (PZT) thin films with high crystallinity and high remanant polarization (Pr) have been fabricated by sol-gel deposition with pulsed excimer (XeCl) laser annealing at low process temperatures. The amorphous PZT films were prepared on Pt/Ti/SiO2/Si substrates by a sol-gel method. The deposited amorphous PZT films were annealed at 550°C for 10 min. to initiate the nucleation of the PZT perovskite phase, and then annealed with an UV pulsed excimer laser (308 nm) heating at 400°C. X-ray diffraction (XRD) patterns show that 150-230 mJ/cm2 range multi-shot excimer laser irradiation drastically improved the crystallinity of the PZT perovskite phase. Field emission SEM (FE SEM) image show that the PZT thin film has uniform-sized crystal grains. The ferroelectric properties were found to depend on the laser energy density and shot number.

UR - http://www.scopus.com/inward/record.url?scp=33750086998&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33750086998&partnerID=8YFLogxK

U2 - 10.1093/ietele/e89-c.10.1460

DO - 10.1093/ietele/e89-c.10.1460

M3 - Article

AN - SCOPUS:33750086998

VL - E89-C

SP - 1460

EP - 1464

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

SN - 0916-8524

IS - 10

ER -