Excimer laser annealing of PbZr 0.4 Ti 0.6 O 3 thin film at low temperature

Wenxu Xianyu, Hans Se Young Cho, Jang-Yeon Kwon, Huaxinag Yin, Takashi Noguchi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

PbZr 0.4 Ti 0.6 O 3 (PZT) thin films with high crystallinity and high remanant polarization (P r ) have been fabricated by sol-gel deposition with pulsed excimer (XeCl) laser annealing at low process temperatures. The amorphous PZT films were prepared on Pt/Ti/SiO 2 /Si substrates by a sol-gel method. The deposited amorphous PZT films were annealed at 550°C for 10 min. to initiate the nucleation of the PZT perovskite phase, and then annealed with an UV pulsed excimer laser (308 nm) heating at 400°C. X-ray diffraction (XRD) patterns show that 150-230 mJ/cm 2 range multi-shot excimer laser irradiation drastically improved the crystallinity of the PZT perovskite phase. Field emission SEM (FE SEM) image show that the PZT thin film has uniform-sized crystal grains. The ferroelectric properties were found to depend on the laser energy density and shot number.

Original languageEnglish
Pages (from-to)1460-1464
Number of pages5
JournalIEICE Transactions on Electronics
VolumeE89-C
Issue number10
DOIs
Publication statusPublished - 2006 Jan 1

Fingerprint

Excimer lasers
Annealing
Pulsed lasers
Thin films
Perovskite
Laser beam effects
Field emission
Temperature
Diffraction patterns
Sol-gel process
Ferroelectric materials
Sol-gels
Nucleation
Polarization
Heating
X ray diffraction
Crystals
Scanning electron microscopy
Lasers
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Xianyu, Wenxu ; Cho, Hans Se Young ; Kwon, Jang-Yeon ; Yin, Huaxinag ; Noguchi, Takashi. / Excimer laser annealing of PbZr 0.4 Ti 0.6 O 3 thin film at low temperature In: IEICE Transactions on Electronics. 2006 ; Vol. E89-C, No. 10. pp. 1460-1464.
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Excimer laser annealing of PbZr 0.4 Ti 0.6 O 3 thin film at low temperature . / Xianyu, Wenxu; Cho, Hans Se Young; Kwon, Jang-Yeon; Yin, Huaxinag; Noguchi, Takashi.

In: IEICE Transactions on Electronics, Vol. E89-C, No. 10, 01.01.2006, p. 1460-1464.

Research output: Contribution to journalArticle

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AU - Xianyu, Wenxu

AU - Cho, Hans Se Young

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AB - PbZr 0.4 Ti 0.6 O 3 (PZT) thin films with high crystallinity and high remanant polarization (P r ) have been fabricated by sol-gel deposition with pulsed excimer (XeCl) laser annealing at low process temperatures. The amorphous PZT films were prepared on Pt/Ti/SiO 2 /Si substrates by a sol-gel method. The deposited amorphous PZT films were annealed at 550°C for 10 min. to initiate the nucleation of the PZT perovskite phase, and then annealed with an UV pulsed excimer laser (308 nm) heating at 400°C. X-ray diffraction (XRD) patterns show that 150-230 mJ/cm 2 range multi-shot excimer laser irradiation drastically improved the crystallinity of the PZT perovskite phase. Field emission SEM (FE SEM) image show that the PZT thin film has uniform-sized crystal grains. The ferroelectric properties were found to depend on the laser energy density and shot number.

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