Excimer laser annealing of PbZr0.4Ti0.6O3 thin film at low temperature

Wenxu Xianyu, Hans Se Young Cho, Jang Yeon Kwon, Huaxinag Yin, Takashi Noguchi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

PbZr0.4Ti0.6O3 (PZT) thin films with high crystallinity and high remanant polarization (Pr) have been fabricated by sol-gel deposition with pulsed excimer (XeCl) laser annealing at low process temperatures. The amorphous PZT films were prepared on Pt/Ti/SiO2/Si substrates by a sol-gel method. The deposited amorphous PZT films were annealed at 550°C for 10 min. to initiate the nucleation of the PZT perovskite phase, and then annealed with an UV pulsed excimer laser (308 nm) heating at 400°C. X-ray diffraction (XRD) patterns show that 150-230 mJ/cm2 range multi-shot excimer laser irradiation drastically improved the crystallinity of the PZT perovskite phase. Field emission SEM (FE SEM) image show that the PZT thin film has uniform-sized crystal grains. The ferroelectric properties were found to depend on the laser energy density and shot number.

Original languageEnglish
Pages (from-to)1460-1464
Number of pages5
JournalIEICE Transactions on Electronics
VolumeE89-C
Issue number10
DOIs
Publication statusPublished - 2006 Oct

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Excimer laser annealing of PbZr<sub>0.4</sub>Ti<sub>0.6</sub>O<sub>3</sub> thin film at low temperature'. Together they form a unique fingerprint.

  • Cite this