Excimer laser annealing of PbZr
                        0.4
                        Ti
                        0.6
                        O
                        3
                         thin film at low temperature

Wenxu Xianyu; Hans Se Young Cho; Jang-Yeon Kwon; Huaxinag Yin; Takashi Noguchi

doi:10.1093/ietele/e89-c.10.1460

Excimer laser annealing of PbZr _0.4 Ti _0.6 O ₃ thin film at low temperature

Wenxu Xianyu, Hans Se Young Cho, Jang-Yeon Kwon, Huaxinag Yin, Takashi Noguchi

School of Integrated Technology

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

PbZr _0.4 Ti _0.6 O ₃ (PZT) thin films with high crystallinity and high remanant polarization (P _r ) have been fabricated by sol-gel deposition with pulsed excimer (XeCl) laser annealing at low process temperatures. The amorphous PZT films were prepared on Pt/Ti/SiO ₂ /Si substrates by a sol-gel method. The deposited amorphous PZT films were annealed at 550°C for 10 min. to initiate the nucleation of the PZT perovskite phase, and then annealed with an UV pulsed excimer laser (308 nm) heating at 400°C. X-ray diffraction (XRD) patterns show that 150-230 mJ/cm ² range multi-shot excimer laser irradiation drastically improved the crystallinity of the PZT perovskite phase. Field emission SEM (FE SEM) image show that the PZT thin film has uniform-sized crystal grains. The ferroelectric properties were found to depend on the laser energy density and shot number.

Original language	English
Pages (from-to)	1460-1464
Number of pages	5
Journal	IEICE Transactions on Electronics
Volume	E89-C
Issue number	10
DOIs	https://doi.org/10.1093/ietele/e89-c.10.1460
Publication status	Published - 2006 Jan 1

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Xianyu, W., Cho, H. S. Y., Kwon, J-Y., Yin, H., & Noguchi, T. (2006). Excimer laser annealing of PbZr _0.4 Ti _0.6 O ₃ thin film at low temperature IEICE Transactions on Electronics, E89-C(10), 1460-1464. https://doi.org/10.1093/ietele/e89-c.10.1460

Xianyu, Wenxu ; Cho, Hans Se Young ; Kwon, Jang-Yeon ; Yin, Huaxinag ; Noguchi, Takashi. / Excimer laser annealing of PbZr _0.4 Ti _0.6 O ₃ thin film at low temperature In: IEICE Transactions on Electronics. 2006 ; Vol. E89-C, No. 10. pp. 1460-1464.

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title = " Excimer laser annealing of PbZr 0.4 Ti 0.6 O 3 thin film at low temperature ",

abstract = " PbZr 0.4 Ti 0.6 O 3 (PZT) thin films with high crystallinity and high remanant polarization (P r ) have been fabricated by sol-gel deposition with pulsed excimer (XeCl) laser annealing at low process temperatures. The amorphous PZT films were prepared on Pt/Ti/SiO 2 /Si substrates by a sol-gel method. The deposited amorphous PZT films were annealed at 550°C for 10 min. to initiate the nucleation of the PZT perovskite phase, and then annealed with an UV pulsed excimer laser (308 nm) heating at 400°C. X-ray diffraction (XRD) patterns show that 150-230 mJ/cm 2 range multi-shot excimer laser irradiation drastically improved the crystallinity of the PZT perovskite phase. Field emission SEM (FE SEM) image show that the PZT thin film has uniform-sized crystal grains. The ferroelectric properties were found to depend on the laser energy density and shot number.",

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Xianyu, W, Cho, HSY, Kwon, J-Y, Yin, H & Noguchi, T 2006, ' Excimer laser annealing of PbZr _0.4 Ti _0.6 O ₃ thin film at low temperature ', IEICE Transactions on Electronics, vol. E89-C, no. 10, pp. 1460-1464. https://doi.org/10.1093/ietele/e89-c.10.1460

Excimer laser annealing of PbZr _0.4 Ti _0.6 O ₃ thin film at low temperature . / Xianyu, Wenxu; Cho, Hans Se Young; Kwon, Jang-Yeon; Yin, Huaxinag; Noguchi, Takashi.

In: IEICE Transactions on Electronics, Vol. E89-C, No. 10, 01.01.2006, p. 1460-1464.

Research output: Contribution to journal › Article

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T1 - Excimer laser annealing of PbZr 0.4 Ti 0.6 O 3 thin film at low temperature

AU - Xianyu, Wenxu

AU - Cho, Hans Se Young

AU - Kwon, Jang-Yeon

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AU - Noguchi, Takashi

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N2 - PbZr 0.4 Ti 0.6 O 3 (PZT) thin films with high crystallinity and high remanant polarization (P r ) have been fabricated by sol-gel deposition with pulsed excimer (XeCl) laser annealing at low process temperatures. The amorphous PZT films were prepared on Pt/Ti/SiO 2 /Si substrates by a sol-gel method. The deposited amorphous PZT films were annealed at 550°C for 10 min. to initiate the nucleation of the PZT perovskite phase, and then annealed with an UV pulsed excimer laser (308 nm) heating at 400°C. X-ray diffraction (XRD) patterns show that 150-230 mJ/cm 2 range multi-shot excimer laser irradiation drastically improved the crystallinity of the PZT perovskite phase. Field emission SEM (FE SEM) image show that the PZT thin film has uniform-sized crystal grains. The ferroelectric properties were found to depend on the laser energy density and shot number.

AB - PbZr 0.4 Ti 0.6 O 3 (PZT) thin films with high crystallinity and high remanant polarization (P r ) have been fabricated by sol-gel deposition with pulsed excimer (XeCl) laser annealing at low process temperatures. The amorphous PZT films were prepared on Pt/Ti/SiO 2 /Si substrates by a sol-gel method. The deposited amorphous PZT films were annealed at 550°C for 10 min. to initiate the nucleation of the PZT perovskite phase, and then annealed with an UV pulsed excimer laser (308 nm) heating at 400°C. X-ray diffraction (XRD) patterns show that 150-230 mJ/cm 2 range multi-shot excimer laser irradiation drastically improved the crystallinity of the PZT perovskite phase. Field emission SEM (FE SEM) image show that the PZT thin film has uniform-sized crystal grains. The ferroelectric properties were found to depend on the laser energy density and shot number.

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Xianyu W, Cho HSY, Kwon J-Y, Yin H, Noguchi T. Excimer laser annealing of PbZr _0.4 Ti _0.6 O ₃ thin film at low temperature IEICE Transactions on Electronics. 2006 Jan 1;E89-C(10):1460-1464. https://doi.org/10.1093/ietele/e89-c.10.1460

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10.1093/ietele/e89-c.10.1460