Excimer laser annealing of PbZr 0.4 Ti 0.6 O 3 thin film at low temperature

Wenxu Xianyu, Hans Se Young Cho, Jang-Yeon Kwon, Huaxinag Yin, Takashi Noguchi

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PbZr 0.4 Ti 0.6 O 3 (PZT) thin films with high crystallinity and high remanant polarization (P r ) have been fabricated by sol-gel deposition with pulsed excimer (XeCl) laser annealing at low process temperatures. The amorphous PZT films were prepared on Pt/Ti/SiO 2 /Si substrates by a sol-gel method. The deposited amorphous PZT films were annealed at 550°C for 10 min. to initiate the nucleation of the PZT perovskite phase, and then annealed with an UV pulsed excimer laser (308 nm) heating at 400°C. X-ray diffraction (XRD) patterns show that 150-230 mJ/cm 2 range multi-shot excimer laser irradiation drastically improved the crystallinity of the PZT perovskite phase. Field emission SEM (FE SEM) image show that the PZT thin film has uniform-sized crystal grains. The ferroelectric properties were found to depend on the laser energy density and shot number.

Original languageEnglish
Pages (from-to)1460-1464
Number of pages5
JournalIEICE Transactions on Electronics
Issue number10
Publication statusPublished - 2006 Jan 1


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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