Abstract
PbZr 0.4 Ti 0.6 O 3 (PZT) thin films with high crystallinity and high remanant polarization (P r ) have been fabricated by sol-gel deposition with pulsed excimer (XeCl) laser annealing at low process temperatures. The amorphous PZT films were prepared on Pt/Ti/SiO 2 /Si substrates by a sol-gel method. The deposited amorphous PZT films were annealed at 550°C for 10 min. to initiate the nucleation of the PZT perovskite phase, and then annealed with an UV pulsed excimer laser (308 nm) heating at 400°C. X-ray diffraction (XRD) patterns show that 150-230 mJ/cm 2 range multi-shot excimer laser irradiation drastically improved the crystallinity of the PZT perovskite phase. Field emission SEM (FE SEM) image show that the PZT thin film has uniform-sized crystal grains. The ferroelectric properties were found to depend on the laser energy density and shot number.
| Original language | English |
|---|---|
| Pages (from-to) | 1460-1464 |
| Number of pages | 5 |
| Journal | IEICE Transactions on Electronics |
| Volume | E89-C |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2006 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Excimer laser annealing of PbZr 0.4 Ti 0.6 O 3 thin film at low temperature . / Xianyu, Wenxu; Cho, Hans Se Young; Kwon, Jang-Yeon; Yin, Huaxinag; Noguchi, Takashi.
In: IEICE Transactions on Electronics, Vol. E89-C, No. 10, 01.01.2006, p. 1460-1464.Research output: Contribution to journal › Article
TY - JOUR
T1 - Excimer laser annealing of PbZr 0.4 Ti 0.6 O 3 thin film at low temperature
AU - Xianyu, Wenxu
AU - Cho, Hans Se Young
AU - Kwon, Jang-Yeon
AU - Yin, Huaxinag
AU - Noguchi, Takashi
PY - 2006/1/1
Y1 - 2006/1/1
N2 - PbZr 0.4 Ti 0.6 O 3 (PZT) thin films with high crystallinity and high remanant polarization (P r ) have been fabricated by sol-gel deposition with pulsed excimer (XeCl) laser annealing at low process temperatures. The amorphous PZT films were prepared on Pt/Ti/SiO 2 /Si substrates by a sol-gel method. The deposited amorphous PZT films were annealed at 550°C for 10 min. to initiate the nucleation of the PZT perovskite phase, and then annealed with an UV pulsed excimer laser (308 nm) heating at 400°C. X-ray diffraction (XRD) patterns show that 150-230 mJ/cm 2 range multi-shot excimer laser irradiation drastically improved the crystallinity of the PZT perovskite phase. Field emission SEM (FE SEM) image show that the PZT thin film has uniform-sized crystal grains. The ferroelectric properties were found to depend on the laser energy density and shot number.
AB - PbZr 0.4 Ti 0.6 O 3 (PZT) thin films with high crystallinity and high remanant polarization (P r ) have been fabricated by sol-gel deposition with pulsed excimer (XeCl) laser annealing at low process temperatures. The amorphous PZT films were prepared on Pt/Ti/SiO 2 /Si substrates by a sol-gel method. The deposited amorphous PZT films were annealed at 550°C for 10 min. to initiate the nucleation of the PZT perovskite phase, and then annealed with an UV pulsed excimer laser (308 nm) heating at 400°C. X-ray diffraction (XRD) patterns show that 150-230 mJ/cm 2 range multi-shot excimer laser irradiation drastically improved the crystallinity of the PZT perovskite phase. Field emission SEM (FE SEM) image show that the PZT thin film has uniform-sized crystal grains. The ferroelectric properties were found to depend on the laser energy density and shot number.
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U2 - 10.1093/ietele/e89-c.10.1460
DO - 10.1093/ietele/e89-c.10.1460
M3 - Article
AN - SCOPUS:33750086998
VL - E89-C
SP - 1460
EP - 1464
JO - IEICE Transactions on Electronics
JF - IEICE Transactions on Electronics
SN - 0916-8524
IS - 10
ER -