PbZr 0.4 Ti 0.6 O 3 (PZT) thin films with high crystallinity and high remanant polarization (P r ) have been fabricated by sol-gel deposition with pulsed excimer (XeCl) laser annealing at low process temperatures. The amorphous PZT films were prepared on Pt/Ti/SiO 2 /Si substrates by a sol-gel method. The deposited amorphous PZT films were annealed at 550°C for 10 min. to initiate the nucleation of the PZT perovskite phase, and then annealed with an UV pulsed excimer laser (308 nm) heating at 400°C. X-ray diffraction (XRD) patterns show that 150-230 mJ/cm 2 range multi-shot excimer laser irradiation drastically improved the crystallinity of the PZT perovskite phase. Field emission SEM (FE SEM) image show that the PZT thin film has uniform-sized crystal grains. The ferroelectric properties were found to depend on the laser energy density and shot number.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering