Exciton transfer and dephasing in polysilanes at low temperature

J. R.G. Thorne, A. Tilgner, Y. R. Kim, J. M. Zeigler, H. P. Trommsdorff, R. M. Hochstrasser

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Abstract

We report on time-correlated single photon counting studies of the sigma conjugated polysilane, poly(di-n-hexylsilane), at 2 K. The emission processes of Raman and dephased flourescence are distinguished. It is shown that the risetime of flourescence and the decay time of the Raman polarization are similar and that energy transfer occurs on a tens of picosecond timescale. Simultaneous depolarization of the emission suggests energy transfer along a twisted chain. The energy transfer time is several times longer than the (T1) dephasing time derived from hole burning studies of the polymer.

Original languageEnglish
Pages (from-to)170-174
Number of pages5
JournalJournal of Luminescence
Volume53
Issue number1-6
DOIs
Publication statusPublished - 1992 Jul

All Science Journal Classification (ASJC) codes

  • Biophysics
  • Biochemistry
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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    Thorne, J. R. G., Tilgner, A., Kim, Y. R., Zeigler, J. M., Trommsdorff, H. P., & Hochstrasser, R. M. (1992). Exciton transfer and dephasing in polysilanes at low temperature. Journal of Luminescence, 53(1-6), 170-174. https://doi.org/10.1016/0022-2313(92)90131-R