Experimental observation of gate geometry dependent characteristic degradations of the multi-finger MOSFETs

Mingu Kang, Ilgu Yun

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this paper, the characteristic degradations of multi-finger MOSFETs with different gate structures are experimentally investigated when the gate voltage stress is applied. Here, the degradations of threshold voltage (V th), subthreshold swing (S sub), and mobility are analyzed depending on the gate geometry. In addition, the correlation between the gate structure considering the effective channel length and the charge trapping effect due to line edge roughness is also investigated using the charge trap density and the off current.

Original languageEnglish
Pages (from-to)1936-1939
Number of pages4
JournalMicroelectronics Reliability
Volume52
Issue number9-10
DOIs
Publication statusPublished - 2012 Sep 1

Fingerprint

field effect transistors
degradation
Degradation
Charge trapping
Geometry
geometry
Threshold voltage
Surface roughness
Electric potential
threshold voltage
roughness
trapping
traps
electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

@article{5acca4421b614ac69d17a8d1de4c3c1f,
title = "Experimental observation of gate geometry dependent characteristic degradations of the multi-finger MOSFETs",
abstract = "In this paper, the characteristic degradations of multi-finger MOSFETs with different gate structures are experimentally investigated when the gate voltage stress is applied. Here, the degradations of threshold voltage (V th), subthreshold swing (S sub), and mobility are analyzed depending on the gate geometry. In addition, the correlation between the gate structure considering the effective channel length and the charge trapping effect due to line edge roughness is also investigated using the charge trap density and the off current.",
author = "Mingu Kang and Ilgu Yun",
year = "2012",
month = "9",
day = "1",
doi = "10.1016/j.microrel.2012.06.022",
language = "English",
volume = "52",
pages = "1936--1939",
journal = "Microelectronics Reliability",
issn = "0026-2714",
publisher = "Elsevier Limited",
number = "9-10",

}

Experimental observation of gate geometry dependent characteristic degradations of the multi-finger MOSFETs. / Kang, Mingu; Yun, Ilgu.

In: Microelectronics Reliability, Vol. 52, No. 9-10, 01.09.2012, p. 1936-1939.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Experimental observation of gate geometry dependent characteristic degradations of the multi-finger MOSFETs

AU - Kang, Mingu

AU - Yun, Ilgu

PY - 2012/9/1

Y1 - 2012/9/1

N2 - In this paper, the characteristic degradations of multi-finger MOSFETs with different gate structures are experimentally investigated when the gate voltage stress is applied. Here, the degradations of threshold voltage (V th), subthreshold swing (S sub), and mobility are analyzed depending on the gate geometry. In addition, the correlation between the gate structure considering the effective channel length and the charge trapping effect due to line edge roughness is also investigated using the charge trap density and the off current.

AB - In this paper, the characteristic degradations of multi-finger MOSFETs with different gate structures are experimentally investigated when the gate voltage stress is applied. Here, the degradations of threshold voltage (V th), subthreshold swing (S sub), and mobility are analyzed depending on the gate geometry. In addition, the correlation between the gate structure considering the effective channel length and the charge trapping effect due to line edge roughness is also investigated using the charge trap density and the off current.

UR - http://www.scopus.com/inward/record.url?scp=84866737030&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84866737030&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2012.06.022

DO - 10.1016/j.microrel.2012.06.022

M3 - Article

AN - SCOPUS:84866737030

VL - 52

SP - 1936

EP - 1939

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

IS - 9-10

ER -