Experimental observation of gate geometry dependent characteristic degradations of the multi-finger MOSFETs

Mingu Kang, Ilgu Yun

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this paper, the characteristic degradations of multi-finger MOSFETs with different gate structures are experimentally investigated when the gate voltage stress is applied. Here, the degradations of threshold voltage (V th), subthreshold swing (S sub), and mobility are analyzed depending on the gate geometry. In addition, the correlation between the gate structure considering the effective channel length and the charge trapping effect due to line edge roughness is also investigated using the charge trap density and the off current.

Original languageEnglish
Pages (from-to)1936-1939
Number of pages4
JournalMicroelectronics Reliability
Volume52
Issue number9-10
DOIs
Publication statusPublished - 2012 Sep 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Experimental observation of gate geometry dependent characteristic degradations of the multi-finger MOSFETs'. Together they form a unique fingerprint.

  • Cite this