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Experimental observation of gate geometry dependent characteristic degradations of the multi-finger MOSFETs
Mingu Kang,
Ilgu Yun
Department of Electrical and Electronic Engineering
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peer-review
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Dive into the research topics of 'Experimental observation of gate geometry dependent characteristic degradations of the multi-finger MOSFETs'. Together they form a unique fingerprint.
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Engineering & Materials Science
Charge trapping
100%
Degradation
88%
Geometry
77%
Threshold voltage
69%
Surface roughness
52%
Electric potential
32%
Physics & Astronomy
field effect transistors
99%
degradation
95%
geometry
71%
threshold voltage
30%
roughness
26%
trapping
24%
traps
23%
electric potential
17%
Chemistry
Trap Density Measurement
96%
Voltage
92%
Compound Mobility
48%
Length
37%