Experimental observation of the post-annealing effect on the dark current of InGaAs waveguide photodiodes

Hansung Joo; Su Chang Jeon; Yong Hwan Kwon; Joong Seon Choe; Ilgu Yun

doi:10.1016/j.sse.2006.07.019

Experimental observation of the post-annealing effect on the dark current of InGaAs waveguide photodiodes

Hansung Joo, Su Chang Jeon, Yong Hwan Kwon, Joong Seon Choe, Ilgu Yun

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The post-annealing effect on the dark current of the InGaAs waveguide photodiodes, which are developed for 40-Gbps optical receiver applications, is experimentally investigated. The interesting experimental phenomena were observed that the dark current is significantly decreased and the breakdown voltage is slightly increased after annealing at 250 and 300 °C whereas the dark current and the breakdown voltage are almost constant after annealing at 200 °C. Based on the experimental results, the post-annealing is more effective for the dark current improvement than the conventional curing process.

Original language	English
Pages (from-to)	1546-1550
Number of pages	5
Journal	Solid-State Electronics
Volume	50
Issue number	9-10
DOIs	https://doi.org/10.1016/j.sse.2006.07.019
Publication status	Published - 2006 Sep

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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@article{2f26843122204487a34a206d95233c71,

title = "Experimental observation of the post-annealing effect on the dark current of InGaAs waveguide photodiodes",

abstract = "The post-annealing effect on the dark current of the InGaAs waveguide photodiodes, which are developed for 40-Gbps optical receiver applications, is experimentally investigated. The interesting experimental phenomena were observed that the dark current is significantly decreased and the breakdown voltage is slightly increased after annealing at 250 and 300 °C whereas the dark current and the breakdown voltage are almost constant after annealing at 200 °C. Based on the experimental results, the post-annealing is more effective for the dark current improvement than the conventional curing process.",

author = "Hansung Joo and Jeon, {Su Chang} and Kwon, {Yong Hwan} and Choe, {Joong Seon} and Ilgu Yun",

year = "2006",

month = sep,

doi = "10.1016/j.sse.2006.07.019",

language = "English",

volume = "50",

pages = "1546--1550",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "9-10",

}

TY - JOUR

T1 - Experimental observation of the post-annealing effect on the dark current of InGaAs waveguide photodiodes

AU - Joo, Hansung

AU - Jeon, Su Chang

AU - Kwon, Yong Hwan

AU - Choe, Joong Seon

AU - Yun, Ilgu

PY - 2006/9

Y1 - 2006/9

N2 - The post-annealing effect on the dark current of the InGaAs waveguide photodiodes, which are developed for 40-Gbps optical receiver applications, is experimentally investigated. The interesting experimental phenomena were observed that the dark current is significantly decreased and the breakdown voltage is slightly increased after annealing at 250 and 300 °C whereas the dark current and the breakdown voltage are almost constant after annealing at 200 °C. Based on the experimental results, the post-annealing is more effective for the dark current improvement than the conventional curing process.

AB - The post-annealing effect on the dark current of the InGaAs waveguide photodiodes, which are developed for 40-Gbps optical receiver applications, is experimentally investigated. The interesting experimental phenomena were observed that the dark current is significantly decreased and the breakdown voltage is slightly increased after annealing at 250 and 300 °C whereas the dark current and the breakdown voltage are almost constant after annealing at 200 °C. Based on the experimental results, the post-annealing is more effective for the dark current improvement than the conventional curing process.

UR - http://www.scopus.com/inward/record.url?scp=33750336598&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33750336598&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2006.07.019

DO - 10.1016/j.sse.2006.07.019

M3 - Article

AN - SCOPUS:33750336598

VL - 50

SP - 1546

EP - 1550

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 9-10

ER -

Experimental observation of the post-annealing effect on the dark current of InGaAs waveguide photodiodes

Abstract

All Science Journal Classification (ASJC) codes

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