Abstract
The post-annealing effect on the dark current of the InGaAs waveguide photodiodes, which are developed for 40-Gbps optical receiver applications, is experimentally investigated. The interesting experimental phenomena were observed that the dark current is significantly decreased and the breakdown voltage is slightly increased after annealing at 250 and 300 °C whereas the dark current and the breakdown voltage are almost constant after annealing at 200 °C. Based on the experimental results, the post-annealing is more effective for the dark current improvement than the conventional curing process.
| Original language | English |
|---|---|
| Pages (from-to) | 1546-1550 |
| Number of pages | 5 |
| Journal | Solid-State Electronics |
| Volume | 50 |
| Issue number | 9-10 |
| DOIs | |
| Publication status | Published - 2006 Sep 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Experimental observation of the post-annealing effect on the dark current of InGaAs waveguide photodiodes. / Joo, Hansung; Jeon, Su Chang; Kwon, Yong Hwan; Choe, Joong Seon; Yun, Ilgu.
In: Solid-State Electronics, Vol. 50, No. 9-10, 01.09.2006, p. 1546-1550.Research output: Contribution to journal › Article
TY - JOUR
T1 - Experimental observation of the post-annealing effect on the dark current of InGaAs waveguide photodiodes
AU - Joo, Hansung
AU - Jeon, Su Chang
AU - Kwon, Yong Hwan
AU - Choe, Joong Seon
AU - Yun, Ilgu
PY - 2006/9/1
Y1 - 2006/9/1
N2 - The post-annealing effect on the dark current of the InGaAs waveguide photodiodes, which are developed for 40-Gbps optical receiver applications, is experimentally investigated. The interesting experimental phenomena were observed that the dark current is significantly decreased and the breakdown voltage is slightly increased after annealing at 250 and 300 °C whereas the dark current and the breakdown voltage are almost constant after annealing at 200 °C. Based on the experimental results, the post-annealing is more effective for the dark current improvement than the conventional curing process.
AB - The post-annealing effect on the dark current of the InGaAs waveguide photodiodes, which are developed for 40-Gbps optical receiver applications, is experimentally investigated. The interesting experimental phenomena were observed that the dark current is significantly decreased and the breakdown voltage is slightly increased after annealing at 250 and 300 °C whereas the dark current and the breakdown voltage are almost constant after annealing at 200 °C. Based on the experimental results, the post-annealing is more effective for the dark current improvement than the conventional curing process.
UR - http://www.scopus.com/inward/record.url?scp=33750336598&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33750336598&partnerID=8YFLogxK
U2 - 10.1016/j.sse.2006.07.019
DO - 10.1016/j.sse.2006.07.019
M3 - Article
AN - SCOPUS:33750336598
VL - 50
SP - 1546
EP - 1550
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 9-10
ER -