Experimental observation of the post-annealing effect on the dark current of InGaAs waveguide photodiodes

Hansung Joo, Su Chang Jeon, Yong Hwan Kwon, Joong Seon Choe, Ilgu Yun

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The post-annealing effect on the dark current of the InGaAs waveguide photodiodes, which are developed for 40-Gbps optical receiver applications, is experimentally investigated. The interesting experimental phenomena were observed that the dark current is significantly decreased and the breakdown voltage is slightly increased after annealing at 250 and 300 °C whereas the dark current and the breakdown voltage are almost constant after annealing at 200 °C. Based on the experimental results, the post-annealing is more effective for the dark current improvement than the conventional curing process.

Original languageEnglish
Pages (from-to)1546-1550
Number of pages5
JournalSolid-State Electronics
Volume50
Issue number9-10
DOIs
Publication statusPublished - 2006 Sep 1

Fingerprint

Dark currents
dark current
Photodiodes
photodiodes
Waveguides
Annealing
waveguides
annealing
Electric breakdown
electrical faults
Optical receivers
curing
Curing
receivers

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Joo, Hansung ; Jeon, Su Chang ; Kwon, Yong Hwan ; Choe, Joong Seon ; Yun, Ilgu. / Experimental observation of the post-annealing effect on the dark current of InGaAs waveguide photodiodes. In: Solid-State Electronics. 2006 ; Vol. 50, No. 9-10. pp. 1546-1550.
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Experimental observation of the post-annealing effect on the dark current of InGaAs waveguide photodiodes. / Joo, Hansung; Jeon, Su Chang; Kwon, Yong Hwan; Choe, Joong Seon; Yun, Ilgu.

In: Solid-State Electronics, Vol. 50, No. 9-10, 01.09.2006, p. 1546-1550.

Research output: Contribution to journalArticle

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