Experiments on scaling and variable range hopping in the integral quantum Hall effect

K. H. Yoo; H. C. Kwon; J. C. Park

doi:10.1016/0038-1098(94)90320-4

Experiments on scaling and variable range hopping in the integral quantum Hall effect

K. H. Yoo, H. C. Kwon, J. C. Park

Department of Physics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We have studied the magnetoresistivity ρ{variant}_xx and Hall resistivity ρ{variant}_xy in GaAs/Al_xGa_1-xAs heterostructures at low temperatures. The half-width Δν(T) of ρ{variant}_xx peaks exhibits the power-law dependence Δν∼T^κ{script} with the exponent κ{script} = 0.50 ± 0.03. This result has been explained by the model which accounts for the scaling behavior in terms of variable range hopping.

Original language	English
Pages (from-to)	821-824
Number of pages	4
Journal	Solid State Communications
Volume	92
Issue number	10
DOIs	https://doi.org/10.1016/0038-1098(94)90320-4
Publication status	Published - 1994 Dec

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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abstract = "We have studied the magnetoresistivity ρ{variant}xx and Hall resistivity ρ{variant}xy in GaAs/AlxGa1-xAs heterostructures at low temperatures. The half-width Δν(T) of ρ{variant}xx peaks exhibits the power-law dependence Δν∼Tκ{script} with the exponent κ{script} = 0.50 ± 0.03. This result has been explained by the model which accounts for the scaling behavior in terms of variable range hopping.",

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N2 - We have studied the magnetoresistivity ρ{variant}xx and Hall resistivity ρ{variant}xy in GaAs/AlxGa1-xAs heterostructures at low temperatures. The half-width Δν(T) of ρ{variant}xx peaks exhibits the power-law dependence Δν∼Tκ{script} with the exponent κ{script} = 0.50 ± 0.03. This result has been explained by the model which accounts for the scaling behavior in terms of variable range hopping.

AB - We have studied the magnetoresistivity ρ{variant}xx and Hall resistivity ρ{variant}xy in GaAs/AlxGa1-xAs heterostructures at low temperatures. The half-width Δν(T) of ρ{variant}xx peaks exhibits the power-law dependence Δν∼Tκ{script} with the exponent κ{script} = 0.50 ± 0.03. This result has been explained by the model which accounts for the scaling behavior in terms of variable range hopping.

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