Experiments on scaling and variable range hopping in the integral quantum Hall effect

Kyung-hwa Yoo, H. C. Kwon, J. C. Park

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We have studied the magnetoresistivity ρ{variant}xx and Hall resistivity ρ{variant}xy in GaAs/AlxGa1-xAs heterostructures at low temperatures. The half-width Δν(T) of ρ{variant}xx peaks exhibits the power-law dependence Δν∼Tκ{script} with the exponent κ{script} = 0.50 ± 0.03. This result has been explained by the model which accounts for the scaling behavior in terms of variable range hopping.

Original languageEnglish
Pages (from-to)821-824
Number of pages4
JournalSolid State Communications
Volume92
Issue number10
DOIs
Publication statusPublished - 1994 Jan 1

Fingerprint

Quantum Hall effect
magnetoresistivity
quantum Hall effect
Magnetoresistance
Heterojunctions
exponents
scaling
electrical resistivity
Experiments
Temperature
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

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Experiments on scaling and variable range hopping in the integral quantum Hall effect. / Yoo, Kyung-hwa; Kwon, H. C.; Park, J. C.

In: Solid State Communications, Vol. 92, No. 10, 01.01.1994, p. 821-824.

Research output: Contribution to journalArticle

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AU - Park, J. C.

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AB - We have studied the magnetoresistivity ρ{variant}xx and Hall resistivity ρ{variant}xy in GaAs/AlxGa1-xAs heterostructures at low temperatures. The half-width Δν(T) of ρ{variant}xx peaks exhibits the power-law dependence Δν∼Tκ{script} with the exponent κ{script} = 0.50 ± 0.03. This result has been explained by the model which accounts for the scaling behavior in terms of variable range hopping.

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