Abstract
We have studied the magnetoresistivity ρ{variant}xx and Hall resistivity ρ{variant}xy in GaAs/AlxGa1-xAs heterostructures at low temperatures. The half-width Δν(T) of ρ{variant}xx peaks exhibits the power-law dependence Δν∼Tκ{script} with the exponent κ{script} = 0.50 ± 0.03. This result has been explained by the model which accounts for the scaling behavior in terms of variable range hopping.
Original language | English |
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Pages (from-to) | 821-824 |
Number of pages | 4 |
Journal | Solid State Communications |
Volume | 92 |
Issue number | 10 |
DOIs | |
Publication status | Published - 1994 Dec |
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry