Explicit continuous I-V model for 2D transition metal dichalcogenide field-effect transistors

L. F. Deng, C. M. Si, H. Q. Huang, J. Wang, H. Wen, Seongil Im

Research output: Contribution to journalArticle

Abstract

In this paper, an explicit continuous I-V model was proposed for field-effect transistors (FETs) with 2-dimensional (2D) transition metal dichalcogenide (TMD) as the semiconductor. The model was derived by means of charge control method. The explicit continuous I-V model was compared with the implicit I-V model, which had been proved valid for FETs based on 2D TMDs. The explicit I-V model agrees well with exact numeric solution of the implicit I-V model. In addition, the explicit continuous model is proven valid by comparing it with the experimental data reported.

Original languageEnglish
Pages (from-to)61-66
Number of pages6
JournalMicroelectronics Journal
Volume88
DOIs
Publication statusPublished - 2019 Jun 1

Fingerprint

Field effect transistors
Transition metals
field effect transistors
transition metals
Semiconductor materials

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Deng, L. F. ; Si, C. M. ; Huang, H. Q. ; Wang, J. ; Wen, H. ; Im, Seongil. / Explicit continuous I-V model for 2D transition metal dichalcogenide field-effect transistors. In: Microelectronics Journal. 2019 ; Vol. 88. pp. 61-66.
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Explicit continuous I-V model for 2D transition metal dichalcogenide field-effect transistors. / Deng, L. F.; Si, C. M.; Huang, H. Q.; Wang, J.; Wen, H.; Im, Seongil.

In: Microelectronics Journal, Vol. 88, 01.06.2019, p. 61-66.

Research output: Contribution to journalArticle

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