Exploiting Data Longevity for Enhancing the Lifetime of Flash-based Storage Class Memory

Wonil Choi, Mohammad Arjomand, Myoungsoo Jung, Mahmut T. Kandemir

Research output: Contribution to journalArticle

Abstract

This paper proposes to exploit the capability of retention time relaxation in flash memories for improving the lifetime of an SLC-based SSD. The main idea is that as a majority of I/O data in a typical workload do not need a retention time larger than a few days, we can have multiple partial program states in a cell and use every two states to store one-bit data at each time. Thus, we can store multiple bits in a cell (one bit at each time) without erasing it after each write-that would directly translates into lifetime enhancement. The proposed scheme is called Dense-SLC (D-SLC) flash design which improves SSD lifetime by 5.1X-8.6X.

Original languageEnglish
Pages (from-to)53
Number of pages1
JournalPerformance Evaluation Review
Volume45
Issue number1
DOIs
Publication statusPublished - 2017 Jun 5

All Science Journal Classification (ASJC) codes

  • Software
  • Hardware and Architecture
  • Computer Networks and Communications

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