Due to the emergence of extremely high density memory along with the growing number of embedded memories, memory yield is an important issue. Memory self-repair using redundancies to increase the yield of memories is widely used. Because high density memories are vulnerable to soft errors, memory error correction code (ECC) plays an important role in memory design. In this paper, methods to exploit spare columns including replaced defective columns are proposed to improve memory ECC. To utilize replaced defective columns, the defect information needs to be stored. Two approaches to store defect information are proposed - one is to use a spare column and the other is to use a content-addressable-memory. Experimental results show that the proposed method can significantly enhance the ECC performance.
|Number of pages||12|
|Journal||IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems|
|Publication status||Published - 2017 Sep|
Bibliographical noteFunding Information:
Manuscript received March 17, 2015; revised July 8, 2015 and September 30, 2015; accepted November 6, 2015. Date of publication March 15, 2017; date of current version August 18, 2017. This work was supported in part by the Basic Science Research Program through the National Research Foundation of Korea by the Ministry of Education under Grant NRF-2015R1D1A1A01058856, in part by Samsung Research Fund, and in part by the National Science Foundation under Grant CCF-1217750. This paper was recommended by Associate Editor H.-G. Stratigopoulos.
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All Science Journal Classification (ASJC) codes
- Computer Graphics and Computer-Aided Design
- Electrical and Electronic Engineering