@inproceedings{dca91a50e3364d8b9c2b00cd1a1bb5c7,
title = "Fabricated poly-Si thin film transistor with anodizing Al film using nanoindentation",
abstract = "This letter reports the fabrication of polycrystalline silicon thin-film transistors (poly-Si TFT) on glass substrates using Al oxide films by anodizing. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The a-Si films were then laser crystallized using XeCl excimer laser irradiation and a four-mask-processed poly-Si TFTs were fabricated with fully self-aligned top gate structure.",
author = "Han, {Jin Woo} and Kim, {Jong Yeon} and Kan, {Hee Jin} and Moon, {Hyun Chan} and Choi, {Seong Ho} and Park, {Kwang Bum} and Kim, {Tae Ha} and Seo, {Dae Shik}",
year = "2006",
doi = "10.1109/NMDC.2006.4388967",
language = "English",
isbn = "1424405408",
series = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",
pages = "698--699",
booktitle = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",
note = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC ; Conference date: 22-10-2006 Through 25-10-2006",
}