Abstract
This letter reports the fabrication of polycrystalline silicon thin-film transistors (poly-Si TFT) on glass substrates using Al oxide films by anodizing. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The a-Si films were then laser crystallized using XeCl excimer laser irradiation and a four-mask-processed poly-Si TFTs were fabricated with fully self-aligned top gate structure.
| Original language | English |
|---|---|
| Title of host publication | 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC |
| Pages | 698-699 |
| Number of pages | 2 |
| DOIs | |
| Publication status | Published - 2006 Dec 1 |
| Event | 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of Duration: 2006 Oct 22 → 2006 Oct 25 |
Publication series
| Name | 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC |
|---|---|
| Volume | 1 |
Other
| Other | 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC |
|---|---|
| Country | Korea, Republic of |
| City | Gyeongju |
| Period | 06/10/22 → 06/10/25 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Materials Science(all)
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Cite this
Han, J. W., Kim, J. Y., Kan, H. J., Moon, H. C., Choi, S. H., Park, K. B., Kim, T. H., & Seo, D. S. (2006). Fabricated poly-Si thin film transistor with anodizing Al film using nanoindentation. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (pp. 698-699). [4388967] (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1). https://doi.org/10.1109/NMDC.2006.4388967