Fabricated poly-Si thin film transistor with anodizing Al film using nanoindentation

Jin Woo Han; Jong Yeon Kim; Hee Jin Kan; Hyun Chan Moon; Seong Ho Choi; Kwang Bum Park; Tae Ha Kim; Dae Shik Seo

doi:10.1109/NMDC.2006.4388967

Fabricated poly-Si thin film transistor with anodizing Al film using nanoindentation

Jin Woo Han, Jong Yeon Kim, Hee Jin Kan, Hyun Chan Moon, Seong Ho Choi, Kwang Bum Park, Tae Ha Kim, Dae Shik Seo

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This letter reports the fabrication of polycrystalline silicon thin-film transistors (poly-Si TFT) on glass substrates using Al oxide films by anodizing. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The a-Si films were then laser crystallized using XeCl excimer laser irradiation and a four-mask-processed poly-Si TFTs were fabricated with fully self-aligned top gate structure.

Original language	English
Title of host publication	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages	698-699
Number of pages	2
DOIs	https://doi.org/10.1109/NMDC.2006.4388967
Publication status	Published - 2006 Dec 1
Event	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of Duration: 2006 Oct 22 → 2006 Oct 25

Publication series

Name	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume	1

Other

Other	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Country	Korea, Republic of
City	Gyeongju
Period	06/10/22 → 06/10/25

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All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Materials Science(all)

Cite this

Han, J. W., Kim, J. Y., Kan, H. J., Moon, H. C., Choi, S. H., Park, K. B., Kim, T. H., & Seo, D. S. (2006). Fabricated poly-Si thin film transistor with anodizing Al film using nanoindentation. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (pp. 698-699). [4388967] (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1). https://doi.org/10.1109/NMDC.2006.4388967

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title = "Fabricated poly-Si thin film transistor with anodizing Al film using nanoindentation",

abstract = "This letter reports the fabrication of polycrystalline silicon thin-film transistors (poly-Si TFT) on glass substrates using Al oxide films by anodizing. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The a-Si films were then laser crystallized using XeCl excimer laser irradiation and a four-mask-processed poly-Si TFTs were fabricated with fully self-aligned top gate structure.",

author = "Han, {Jin Woo} and Kim, {Jong Yeon} and Kan, {Hee Jin} and Moon, {Hyun Chan} and Choi, {Seong Ho} and Park, {Kwang Bum} and Kim, {Tae Ha} and Seo, {Dae Shik}",

year = "2006",

month = dec

day = "1",

doi = "10.1109/NMDC.2006.4388967",

language = "English",

isbn = "1424405408",

series = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

pages = "698--699",

booktitle = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

note = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC ; Conference date: 22-10-2006 Through 25-10-2006",

}

Han, JW, Kim, JY, Kan, HJ, Moon, HC, Choi, SH, Park, KB, Kim, TH & Seo, DS 2006, Fabricated poly-Si thin film transistor with anodizing Al film using nanoindentation. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC., 4388967, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, vol. 1, pp. 698-699, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06/10/22. https://doi.org/10.1109/NMDC.2006.4388967

Fabricated poly-Si thin film transistor with anodizing Al film using nanoindentation. / Han, Jin Woo; Kim, Jong Yeon; Kan, Hee Jin; Moon, Hyun Chan; Choi, Seong Ho; Park, Kwang Bum; Kim, Tae Ha; Seo, Dae Shik.

2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. 2006. p. 698-699 4388967 (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - This letter reports the fabrication of polycrystalline silicon thin-film transistors (poly-Si TFT) on glass substrates using Al oxide films by anodizing. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The a-Si films were then laser crystallized using XeCl excimer laser irradiation and a four-mask-processed poly-Si TFTs were fabricated with fully self-aligned top gate structure.

AB - This letter reports the fabrication of polycrystalline silicon thin-film transistors (poly-Si TFT) on glass substrates using Al oxide films by anodizing. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The a-Si films were then laser crystallized using XeCl excimer laser irradiation and a four-mask-processed poly-Si TFTs were fabricated with fully self-aligned top gate structure.

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Access to Document

10.1109/NMDC.2006.4388967