Fabricated poly-Si thin film transistor with anodizing Al film using nanoindentation

Jin Woo Han, Jong Yeon Kim, Hee Jin Kan, Hyun Chan Moon, Seong Ho Choi, Kwang Bum Park, Tae Ha Kim, Dae Shik Seo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This letter reports the fabrication of polycrystalline silicon thin-film transistors (poly-Si TFT) on glass substrates using Al oxide films by anodizing. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The a-Si films were then laser crystallized using XeCl excimer laser irradiation and a four-mask-processed poly-Si TFTs were fabricated with fully self-aligned top gate structure.

Original languageEnglish
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages698-699
Number of pages2
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: 2006 Oct 222006 Oct 25

Publication series

Name2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume1

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
CountryKorea, Republic of
CityGyeongju
Period06/10/2206/10/25

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Materials Science(all)

Cite this

Han, J. W., Kim, J. Y., Kan, H. J., Moon, H. C., Choi, S. H., Park, K. B., Kim, T. H., & Seo, D. S. (2006). Fabricated poly-Si thin film transistor with anodizing Al film using nanoindentation. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (pp. 698-699). [4388967] (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1). https://doi.org/10.1109/NMDC.2006.4388967