Abstract
This letter reports the fabrication of Si nanowire using nanoimprint Method. We propose silicon nanowire fabricate method which enables us to provide mass production compatible and electronics device. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The a-Si films were then laser crystallized using XeCl excimer laser irradiation and nanoimprint-processed was fabricated with quartz mask.
| Original language | English |
|---|---|
| Title of host publication | 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC |
| Pages | 700-701 |
| Number of pages | 2 |
| DOIs | |
| Publication status | Published - 2006 Dec 1 |
| Event | 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of Duration: 2006 Oct 22 → 2006 Oct 25 |
Publication series
| Name | 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC |
|---|---|
| Volume | 1 |
Other
| Other | 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC |
|---|---|
| Country | Korea, Republic of |
| City | Gyeongju |
| Period | 06/10/22 → 06/10/25 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Materials Science(all)
Cite this
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Fabricated Si nanowire using nanoimprint method. / Han, Jin Woo; Kim, Jong Yoen; Kan, Hee Jin; Moon, Hyun Chan; Choi, Seong Ho; Park, Kwang Bum; Kim, Tae Ha; Seo, Dae-Shik.
2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. 2006. p. 700-701 4388968 (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Fabricated Si nanowire using nanoimprint method
AU - Han, Jin Woo
AU - Kim, Jong Yoen
AU - Kan, Hee Jin
AU - Moon, Hyun Chan
AU - Choi, Seong Ho
AU - Park, Kwang Bum
AU - Kim, Tae Ha
AU - Seo, Dae-Shik
PY - 2006/12/1
Y1 - 2006/12/1
N2 - This letter reports the fabrication of Si nanowire using nanoimprint Method. We propose silicon nanowire fabricate method which enables us to provide mass production compatible and electronics device. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The a-Si films were then laser crystallized using XeCl excimer laser irradiation and nanoimprint-processed was fabricated with quartz mask.
AB - This letter reports the fabrication of Si nanowire using nanoimprint Method. We propose silicon nanowire fabricate method which enables us to provide mass production compatible and electronics device. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The a-Si films were then laser crystallized using XeCl excimer laser irradiation and nanoimprint-processed was fabricated with quartz mask.
UR - http://www.scopus.com/inward/record.url?scp=50249090938&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=50249090938&partnerID=8YFLogxK
U2 - 10.1109/NMDC.2006.4388968
DO - 10.1109/NMDC.2006.4388968
M3 - Conference contribution
SN - 1424405408
SN - 9781424405404
T3 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
SP - 700
EP - 701
BT - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
ER -