Fabricated Si nanowire using nanoimprint method

Jin Woo Han; Jong Yoen Kim; Hee Jin Kan; Hyun Chan Moon; Seong Ho Choi; Kwang Bum Park; Tae Ha Kim; Dae Shik Seo

doi:10.1109/NMDC.2006.4388968

Fabricated Si nanowire using nanoimprint method

Jin Woo Han, Jong Yoen Kim, Hee Jin Kan, Hyun Chan Moon, Seong Ho Choi, Kwang Bum Park, Tae Ha Kim, Dae Shik Seo

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

This letter reports the fabrication of Si nanowire using nanoimprint Method. We propose silicon nanowire fabricate method which enables us to provide mass production compatible and electronics device. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The a-Si films were then laser crystallized using XeCl excimer laser irradiation and nanoimprint-processed was fabricated with quartz mask.

Original language	English
Title of host publication	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages	700-701
Number of pages	2
DOIs	https://doi.org/10.1109/NMDC.2006.4388968
Publication status	Published - 2006
Event	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of Duration: 2006 Oct 22 → 2006 Oct 25

Publication series

Name	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume	1

Other

Other	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Country/Territory	Korea, Republic of
City	Gyeongju
Period	06/10/22 → 06/10/25

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Materials Science(all)

Access to Document

10.1109/NMDC.2006.4388968

Cite this

@inproceedings{fa5b5327be684ea5945a112cc43bb6e2,

title = "Fabricated Si nanowire using nanoimprint method",

abstract = "This letter reports the fabrication of Si nanowire using nanoimprint Method. We propose silicon nanowire fabricate method which enables us to provide mass production compatible and electronics device. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The a-Si films were then laser crystallized using XeCl excimer laser irradiation and nanoimprint-processed was fabricated with quartz mask.",

author = "Han, {Jin Woo} and Kim, {Jong Yoen} and Kan, {Hee Jin} and Moon, {Hyun Chan} and Choi, {Seong Ho} and Park, {Kwang Bum} and Kim, {Tae Ha} and Seo, {Dae Shik}",

year = "2006",

doi = "10.1109/NMDC.2006.4388968",

language = "English",

isbn = "1424405408",

series = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

pages = "700--701",

booktitle = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

note = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC ; Conference date: 22-10-2006 Through 25-10-2006",

}

Han, JW, Kim, JY, Kan, HJ, Moon, HC, Choi, SH, Park, KB, Kim, TH & Seo, DS 2006, Fabricated Si nanowire using nanoimprint method. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC., 4388968, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, vol. 1, pp. 700-701, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06/10/22. https://doi.org/10.1109/NMDC.2006.4388968

TY - GEN

T1 - Fabricated Si nanowire using nanoimprint method

AU - Han, Jin Woo

AU - Kim, Jong Yoen

AU - Kan, Hee Jin

AU - Moon, Hyun Chan

AU - Choi, Seong Ho

AU - Park, Kwang Bum

AU - Kim, Tae Ha

AU - Seo, Dae Shik

PY - 2006

Y1 - 2006

N2 - This letter reports the fabrication of Si nanowire using nanoimprint Method. We propose silicon nanowire fabricate method which enables us to provide mass production compatible and electronics device. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The a-Si films were then laser crystallized using XeCl excimer laser irradiation and nanoimprint-processed was fabricated with quartz mask.

AB - This letter reports the fabrication of Si nanowire using nanoimprint Method. We propose silicon nanowire fabricate method which enables us to provide mass production compatible and electronics device. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The a-Si films were then laser crystallized using XeCl excimer laser irradiation and nanoimprint-processed was fabricated with quartz mask.

UR - http://www.scopus.com/inward/record.url?scp=50249090938&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=50249090938&partnerID=8YFLogxK

U2 - 10.1109/NMDC.2006.4388968

DO - 10.1109/NMDC.2006.4388968

M3 - Conference contribution

AN - SCOPUS:50249090938

SN - 1424405408

SN - 9781424405404

T3 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

SP - 700

EP - 701

BT - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

T2 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

Y2 - 22 October 2006 through 25 October 2006

ER -

Fabricated Si nanowire using nanoimprint method

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