Fabricated Si nanowire using nanoimprint method

Jin Woo Han; Jong Yoen Kim; Hee Jin Kan; Hyun Chan Moon; Seong Ho Choi; Kwang Bum Park; Tae Ha Kim; Dae Shik Seo

doi:10.1109/NMDC.2006.4388968

Fabricated Si nanowire using nanoimprint method

Jin Woo Han, Jong Yoen Kim, Hee Jin Kan, Hyun Chan Moon, Seong Ho Choi, Kwang Bum Park, Tae Ha Kim, Dae Shik Seo

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

This letter reports the fabrication of Si nanowire using nanoimprint Method. We propose silicon nanowire fabricate method which enables us to provide mass production compatible and electronics device. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The a-Si films were then laser crystallized using XeCl excimer laser irradiation and nanoimprint-processed was fabricated with quartz mask.

Original language	English
Title of host publication	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages	700-701
Number of pages	2
DOIs	https://doi.org/10.1109/NMDC.2006.4388968
Publication status	Published - 2006 Dec 1
Event	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of Duration: 2006 Oct 22 → 2006 Oct 25

Publication series

Name	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume	1

Other

Other	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Country	Korea, Republic of
City	Gyeongju
Period	06/10/22 → 06/10/25

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All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Materials Science(all)

Cite this

Han, J. W., Kim, J. Y., Kan, H. J., Moon, H. C., Choi, S. H., Park, K. B., Kim, T. H., & Seo, D. S. (2006). Fabricated Si nanowire using nanoimprint method. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (pp. 700-701). [4388968] (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1). https://doi.org/10.1109/NMDC.2006.4388968

@inproceedings{fa5b5327be684ea5945a112cc43bb6e2,

title = "Fabricated Si nanowire using nanoimprint method",

abstract = "This letter reports the fabrication of Si nanowire using nanoimprint Method. We propose silicon nanowire fabricate method which enables us to provide mass production compatible and electronics device. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The a-Si films were then laser crystallized using XeCl excimer laser irradiation and nanoimprint-processed was fabricated with quartz mask.",

author = "Han, {Jin Woo} and Kim, {Jong Yoen} and Kan, {Hee Jin} and Moon, {Hyun Chan} and Choi, {Seong Ho} and Park, {Kwang Bum} and Kim, {Tae Ha} and Seo, {Dae Shik}",

year = "2006",

month = dec

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doi = "10.1109/NMDC.2006.4388968",

language = "English",

isbn = "1424405408",

series = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

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booktitle = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

note = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC ; Conference date: 22-10-2006 Through 25-10-2006",

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Han, JW, Kim, JY, Kan, HJ, Moon, HC, Choi, SH, Park, KB, Kim, TH & Seo, DS 2006, Fabricated Si nanowire using nanoimprint method. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC., 4388968, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, vol. 1, pp. 700-701, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06/10/22. https://doi.org/10.1109/NMDC.2006.4388968

Fabricated Si nanowire using nanoimprint method. / Han, Jin Woo; Kim, Jong Yoen; Kan, Hee Jin; Moon, Hyun Chan; Choi, Seong Ho; Park, Kwang Bum; Kim, Tae Ha; Seo, Dae Shik.

2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. 2006. p. 700-701 4388968 (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - This letter reports the fabrication of Si nanowire using nanoimprint Method. We propose silicon nanowire fabricate method which enables us to provide mass production compatible and electronics device. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The a-Si films were then laser crystallized using XeCl excimer laser irradiation and nanoimprint-processed was fabricated with quartz mask.

AB - This letter reports the fabrication of Si nanowire using nanoimprint Method. We propose silicon nanowire fabricate method which enables us to provide mass production compatible and electronics device. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The a-Si films were then laser crystallized using XeCl excimer laser irradiation and nanoimprint-processed was fabricated with quartz mask.

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Access to Document

10.1109/NMDC.2006.4388968