Solution-processed gate insulator was fabricated using polymethylphenylsilane (PMPS) as a liquid precursor. The spin-coated PMPS films were transformed into SiO2 films after exposing to ultraviolet (UV) with 365 nm of wavelength. Fourier transform infrared spectra showed the variations of photo oxidation according to UV exposing time. The peak intensity of Si-O-Si bond increases with the UV energy, while the intensities of the methyl and phenyl peaks decrease. The electrical characteristics of PMPS-based spin-on glass (PMPS-SOG) were analyzed by capacitance-voltage and leakage current measurements. The dielectric constant was 4.14 and leakage current density was 10- 7 A/cm2. The low temperature below 200 °C fabrication processing of PMPS-SOG could be achieved by UV exposing. PMPS-SOG, forming SiO2, is applicable to gate insulator by low temperature solution-based process.
Bibliographical noteFunding Information:
This work was supported by Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) [No. R0A-2007-000-10044-0(2007)] and the LG Display.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry