Fabricating gate insulator by low temperature solution-based process

Si Joon Kim; Dong Lim Kim; Hyun Jae Kim

doi:10.1016/j.tsf.2009.02.002

Fabricating gate insulator by low temperature solution-based process

Si Joon Kim, Dong Lim Kim, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Solution-processed gate insulator was fabricated using polymethylphenylsilane (PMPS) as a liquid precursor. The spin-coated PMPS films were transformed into SiO₂ films after exposing to ultraviolet (UV) with 365 nm of wavelength. Fourier transform infrared spectra showed the variations of photo oxidation according to UV exposing time. The peak intensity of Si-O-Si bond increases with the UV energy, while the intensities of the methyl and phenyl peaks decrease. The electrical characteristics of PMPS-based spin-on glass (PMPS-SOG) were analyzed by capacitance-voltage and leakage current measurements. The dielectric constant was 4.14 and leakage current density was 10^{- 7} A/cm². The low temperature below 200 °C fabrication processing of PMPS-SOG could be achieved by UV exposing. PMPS-SOG, forming SiO₂, is applicable to gate insulator by low temperature solution-based process.

Original language	English
Pages (from-to)	4135-4137
Number of pages	3
Journal	Thin Solid Films
Volume	517
Issue number	14
DOIs	https://doi.org/10.1016/j.tsf.2009.02.002
Publication status	Published - 2009 May 29

Bibliographical note

Funding Information:
This work was supported by Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) [No. R0A-2007-000-10044-0(2007)] and the LG Display.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2009.02.002

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title = "Fabricating gate insulator by low temperature solution-based process",

abstract = "Solution-processed gate insulator was fabricated using polymethylphenylsilane (PMPS) as a liquid precursor. The spin-coated PMPS films were transformed into SiO2 films after exposing to ultraviolet (UV) with 365 nm of wavelength. Fourier transform infrared spectra showed the variations of photo oxidation according to UV exposing time. The peak intensity of Si-O-Si bond increases with the UV energy, while the intensities of the methyl and phenyl peaks decrease. The electrical characteristics of PMPS-based spin-on glass (PMPS-SOG) were analyzed by capacitance-voltage and leakage current measurements. The dielectric constant was 4.14 and leakage current density was 10- 7 A/cm2. The low temperature below 200 °C fabrication processing of PMPS-SOG could be achieved by UV exposing. PMPS-SOG, forming SiO2, is applicable to gate insulator by low temperature solution-based process.",

author = "Kim, {Si Joon} and Kim, {Dong Lim} and Kim, {Hyun Jae}",

note = "Funding Information: This work was supported by Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) [No. R0A-2007-000-10044-0(2007)] and the LG Display.",

year = "2009",

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doi = "10.1016/j.tsf.2009.02.002",

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AU - Kim, Si Joon

AU - Kim, Dong Lim

AU - Kim, Hyun Jae

N1 - Funding Information: This work was supported by Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) [No. R0A-2007-000-10044-0(2007)] and the LG Display.

PY - 2009/5/29

Y1 - 2009/5/29

N2 - Solution-processed gate insulator was fabricated using polymethylphenylsilane (PMPS) as a liquid precursor. The spin-coated PMPS films were transformed into SiO2 films after exposing to ultraviolet (UV) with 365 nm of wavelength. Fourier transform infrared spectra showed the variations of photo oxidation according to UV exposing time. The peak intensity of Si-O-Si bond increases with the UV energy, while the intensities of the methyl and phenyl peaks decrease. The electrical characteristics of PMPS-based spin-on glass (PMPS-SOG) were analyzed by capacitance-voltage and leakage current measurements. The dielectric constant was 4.14 and leakage current density was 10- 7 A/cm2. The low temperature below 200 °C fabrication processing of PMPS-SOG could be achieved by UV exposing. PMPS-SOG, forming SiO2, is applicable to gate insulator by low temperature solution-based process.

AB - Solution-processed gate insulator was fabricated using polymethylphenylsilane (PMPS) as a liquid precursor. The spin-coated PMPS films were transformed into SiO2 films after exposing to ultraviolet (UV) with 365 nm of wavelength. Fourier transform infrared spectra showed the variations of photo oxidation according to UV exposing time. The peak intensity of Si-O-Si bond increases with the UV energy, while the intensities of the methyl and phenyl peaks decrease. The electrical characteristics of PMPS-based spin-on glass (PMPS-SOG) were analyzed by capacitance-voltage and leakage current measurements. The dielectric constant was 4.14 and leakage current density was 10- 7 A/cm2. The low temperature below 200 °C fabrication processing of PMPS-SOG could be achieved by UV exposing. PMPS-SOG, forming SiO2, is applicable to gate insulator by low temperature solution-based process.

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ER -

Fabricating gate insulator by low temperature solution-based process

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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