Abstract
Silicon carbide (SiC) whiskers were produced at different positions in the chemical vapor deposition (CVD) furnace. The effect of shifts in specimen position on vaporsolid (VS) whisker growth was studied. First, we confirmed the major factors influencing CVD whisker growth by controlling the specimen position. The source reactant depletion effect and temperature gradient acted to reduce the whisker diameter by 33.3 and 61.7%, but the gas residence time only accounted for 4.2% of whisker diameter reduction. The specimen upon which all three factors acted showed a 74.2% decrease in diameter. Transmission electron microscopy (TEM) observation showed that all whiskers had highly crystalline FCC structures. The front perpendicular specimen showed higher stacking fault densities, whereas the back horizontal specimen possessed no stacking faults. These results suggest that position variation led to a growth rate difference, which affected the stability of whisker growth. Based on this idea, we confirmed the possibility of synthesizing whiskers of two different diameters on the same substrate. This can propose a new network structure consisting of combined whiskers. This report focuses on varying the whisker deposition size by controlling the deposition position instead of changing the deposition conditions as is common.
| Original language | English |
|---|---|
| Pages (from-to) | 1083-1086 |
| Number of pages | 4 |
| Journal | Journal of the Ceramic Society of Japan |
| Volume | 118 |
| Issue number | 1383 |
| DOIs | |
| Publication status | Published - 2010 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Ceramics and Composites
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry
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Fabricating SiC whiskers of different sizes by controlling only the CVD deposition position. / Choi, Yoo Youl; Kim, Jun Gyu; Park, Si Jung; Choi, Doo Jin.
In: Journal of the Ceramic Society of Japan, Vol. 118, No. 1383, 01.01.2010, p. 1083-1086.Research output: Contribution to journal › Article
TY - JOUR
T1 - Fabricating SiC whiskers of different sizes by controlling only the CVD deposition position
AU - Choi, Yoo Youl
AU - Kim, Jun Gyu
AU - Park, Si Jung
AU - Choi, Doo Jin
PY - 2010/1/1
Y1 - 2010/1/1
N2 - Silicon carbide (SiC) whiskers were produced at different positions in the chemical vapor deposition (CVD) furnace. The effect of shifts in specimen position on vaporsolid (VS) whisker growth was studied. First, we confirmed the major factors influencing CVD whisker growth by controlling the specimen position. The source reactant depletion effect and temperature gradient acted to reduce the whisker diameter by 33.3 and 61.7%, but the gas residence time only accounted for 4.2% of whisker diameter reduction. The specimen upon which all three factors acted showed a 74.2% decrease in diameter. Transmission electron microscopy (TEM) observation showed that all whiskers had highly crystalline FCC structures. The front perpendicular specimen showed higher stacking fault densities, whereas the back horizontal specimen possessed no stacking faults. These results suggest that position variation led to a growth rate difference, which affected the stability of whisker growth. Based on this idea, we confirmed the possibility of synthesizing whiskers of two different diameters on the same substrate. This can propose a new network structure consisting of combined whiskers. This report focuses on varying the whisker deposition size by controlling the deposition position instead of changing the deposition conditions as is common.
AB - Silicon carbide (SiC) whiskers were produced at different positions in the chemical vapor deposition (CVD) furnace. The effect of shifts in specimen position on vaporsolid (VS) whisker growth was studied. First, we confirmed the major factors influencing CVD whisker growth by controlling the specimen position. The source reactant depletion effect and temperature gradient acted to reduce the whisker diameter by 33.3 and 61.7%, but the gas residence time only accounted for 4.2% of whisker diameter reduction. The specimen upon which all three factors acted showed a 74.2% decrease in diameter. Transmission electron microscopy (TEM) observation showed that all whiskers had highly crystalline FCC structures. The front perpendicular specimen showed higher stacking fault densities, whereas the back horizontal specimen possessed no stacking faults. These results suggest that position variation led to a growth rate difference, which affected the stability of whisker growth. Based on this idea, we confirmed the possibility of synthesizing whiskers of two different diameters on the same substrate. This can propose a new network structure consisting of combined whiskers. This report focuses on varying the whisker deposition size by controlling the deposition position instead of changing the deposition conditions as is common.
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U2 - 10.2109/jcersj2.118.1083
DO - 10.2109/jcersj2.118.1083
M3 - Article
AN - SCOPUS:78149321653
VL - 118
SP - 1083
EP - 1086
JO - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
JF - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
SN - 1882-0743
IS - 1383
ER -