Fabrication and characterization of direct-patternable PZT film prepared by photochemical metal-organic deposition

Hyeong Ho Park, Hyung-Ho Park, Tae Song Kim, Ross H. Hill

Research output: Contribution to journalArticle

Abstract

The ferroelectric properties of UV irradiated and non-irradiated PZT films prepared via photochemical metal-organic deposition using photosensitive precursors were characterized. Fourier transform infrared spectroscopy showed that complete removal of organic groups was possible through UV exposure of the spin-coated PZT precursor films at room temperature. The measured remnant polarization values of UV-irradiated and non-irradiated PZT films after annealing at 650°C were 29 and 23 μC/cm2, respectively. The UV irradiation was found to be effective for the enhancement of the <111> growth orientation and ferroelectric property of PZT film and in the direct patterning in the fabrication of micro-patterned systems without dry etching.

Original languageEnglish
Pages (from-to)98-102
Number of pages5
JournalKorean Journal of Materials Research
Volume18
Issue number2
DOIs
Publication statusPublished - 2008 Feb 1

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Metals
Fabrication
Ferroelectric materials
Dry etching
Fourier transform infrared spectroscopy
Irradiation
Annealing
Polarization
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

@article{59f21a98765e4f159af22b74b4e6b7c7,
title = "Fabrication and characterization of direct-patternable PZT film prepared by photochemical metal-organic deposition",
abstract = "The ferroelectric properties of UV irradiated and non-irradiated PZT films prepared via photochemical metal-organic deposition using photosensitive precursors were characterized. Fourier transform infrared spectroscopy showed that complete removal of organic groups was possible through UV exposure of the spin-coated PZT precursor films at room temperature. The measured remnant polarization values of UV-irradiated and non-irradiated PZT films after annealing at 650°C were 29 and 23 μC/cm2, respectively. The UV irradiation was found to be effective for the enhancement of the <111> growth orientation and ferroelectric property of PZT film and in the direct patterning in the fabrication of micro-patterned systems without dry etching.",
author = "Park, {Hyeong Ho} and Hyung-Ho Park and Kim, {Tae Song} and Hill, {Ross H.}",
year = "2008",
month = "2",
day = "1",
doi = "10.3740/MRSK.2008.18.2.098",
language = "English",
volume = "18",
pages = "98--102",
journal = "Korean Journal of Materials Research",
issn = "1225-0562",
publisher = "The Korea Federation of Science and Technology",
number = "2",

}

Fabrication and characterization of direct-patternable PZT film prepared by photochemical metal-organic deposition. / Park, Hyeong Ho; Park, Hyung-Ho; Kim, Tae Song; Hill, Ross H.

In: Korean Journal of Materials Research, Vol. 18, No. 2, 01.02.2008, p. 98-102.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Fabrication and characterization of direct-patternable PZT film prepared by photochemical metal-organic deposition

AU - Park, Hyeong Ho

AU - Park, Hyung-Ho

AU - Kim, Tae Song

AU - Hill, Ross H.

PY - 2008/2/1

Y1 - 2008/2/1

N2 - The ferroelectric properties of UV irradiated and non-irradiated PZT films prepared via photochemical metal-organic deposition using photosensitive precursors were characterized. Fourier transform infrared spectroscopy showed that complete removal of organic groups was possible through UV exposure of the spin-coated PZT precursor films at room temperature. The measured remnant polarization values of UV-irradiated and non-irradiated PZT films after annealing at 650°C were 29 and 23 μC/cm2, respectively. The UV irradiation was found to be effective for the enhancement of the <111> growth orientation and ferroelectric property of PZT film and in the direct patterning in the fabrication of micro-patterned systems without dry etching.

AB - The ferroelectric properties of UV irradiated and non-irradiated PZT films prepared via photochemical metal-organic deposition using photosensitive precursors were characterized. Fourier transform infrared spectroscopy showed that complete removal of organic groups was possible through UV exposure of the spin-coated PZT precursor films at room temperature. The measured remnant polarization values of UV-irradiated and non-irradiated PZT films after annealing at 650°C were 29 and 23 μC/cm2, respectively. The UV irradiation was found to be effective for the enhancement of the <111> growth orientation and ferroelectric property of PZT film and in the direct patterning in the fabrication of micro-patterned systems without dry etching.

UR - http://www.scopus.com/inward/record.url?scp=40749107379&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=40749107379&partnerID=8YFLogxK

U2 - 10.3740/MRSK.2008.18.2.098

DO - 10.3740/MRSK.2008.18.2.098

M3 - Article

AN - SCOPUS:40749107379

VL - 18

SP - 98

EP - 102

JO - Korean Journal of Materials Research

JF - Korean Journal of Materials Research

SN - 1225-0562

IS - 2

ER -