Fabrication and characterization of direct-patternable PZT film prepared by photochemical metal-organic deposition

Hyeong Ho Park; Hyung Ho Park; Tae Song Kim; Ross H. Hill

doi:10.3740/MRSK.2008.18.2.098

Fabrication and characterization of direct-patternable PZT film prepared by photochemical metal-organic deposition

Hyeong Ho Park, Hyung Ho Park, Tae Song Kim, Ross H. Hill

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The ferroelectric properties of UV irradiated and non-irradiated PZT films prepared via photochemical metal-organic deposition using photosensitive precursors were characterized. Fourier transform infrared spectroscopy showed that complete removal of organic groups was possible through UV exposure of the spin-coated PZT precursor films at room temperature. The measured remnant polarization values of UV-irradiated and non-irradiated PZT films after annealing at 650°C were 29 and 23 μC/cm², respectively. The UV irradiation was found to be effective for the enhancement of the <111> growth orientation and ferroelectric property of PZT film and in the direct patterning in the fabrication of micro-patterned systems without dry etching.

Original language	English
Pages (from-to)	98-102
Number of pages	5
Journal	Korean Journal of Materials Research
Volume	18
Issue number	2
DOIs	https://doi.org/10.3740/MRSK.2008.18.2.098
Publication status	Published - 2008 Feb

All Science Journal Classification (ASJC) codes

Materials Science(all)

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10.3740/MRSK.2008.18.2.098

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@article{59f21a98765e4f159af22b74b4e6b7c7,

title = "Fabrication and characterization of direct-patternable PZT film prepared by photochemical metal-organic deposition",

abstract = "The ferroelectric properties of UV irradiated and non-irradiated PZT films prepared via photochemical metal-organic deposition using photosensitive precursors were characterized. Fourier transform infrared spectroscopy showed that complete removal of organic groups was possible through UV exposure of the spin-coated PZT precursor films at room temperature. The measured remnant polarization values of UV-irradiated and non-irradiated PZT films after annealing at 650°C were 29 and 23 μC/cm2, respectively. The UV irradiation was found to be effective for the enhancement of the <111> growth orientation and ferroelectric property of PZT film and in the direct patterning in the fabrication of micro-patterned systems without dry etching.",

author = "Park, {Hyeong Ho} and Park, {Hyung Ho} and Kim, {Tae Song} and Hill, {Ross H.}",

year = "2008",

month = feb,

doi = "10.3740/MRSK.2008.18.2.098",

language = "English",

volume = "18",

pages = "98--102",

journal = "Korean Journal of Materials Research",

issn = "1225-0562",

publisher = "The Korea Federation of Science and Technology",

number = "2",

}

TY - JOUR

T1 - Fabrication and characterization of direct-patternable PZT film prepared by photochemical metal-organic deposition

AU - Park, Hyeong Ho

AU - Park, Hyung Ho

AU - Kim, Tae Song

AU - Hill, Ross H.

PY - 2008/2

Y1 - 2008/2

N2 - The ferroelectric properties of UV irradiated and non-irradiated PZT films prepared via photochemical metal-organic deposition using photosensitive precursors were characterized. Fourier transform infrared spectroscopy showed that complete removal of organic groups was possible through UV exposure of the spin-coated PZT precursor films at room temperature. The measured remnant polarization values of UV-irradiated and non-irradiated PZT films after annealing at 650°C were 29 and 23 μC/cm2, respectively. The UV irradiation was found to be effective for the enhancement of the <111> growth orientation and ferroelectric property of PZT film and in the direct patterning in the fabrication of micro-patterned systems without dry etching.

AB - The ferroelectric properties of UV irradiated and non-irradiated PZT films prepared via photochemical metal-organic deposition using photosensitive precursors were characterized. Fourier transform infrared spectroscopy showed that complete removal of organic groups was possible through UV exposure of the spin-coated PZT precursor films at room temperature. The measured remnant polarization values of UV-irradiated and non-irradiated PZT films after annealing at 650°C were 29 and 23 μC/cm2, respectively. The UV irradiation was found to be effective for the enhancement of the <111> growth orientation and ferroelectric property of PZT film and in the direct patterning in the fabrication of micro-patterned systems without dry etching.

UR - http://www.scopus.com/inward/record.url?scp=40749107379&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=40749107379&partnerID=8YFLogxK

U2 - 10.3740/MRSK.2008.18.2.098

DO - 10.3740/MRSK.2008.18.2.098

M3 - Article

AN - SCOPUS:40749107379

SN - 1225-0562

VL - 18

SP - 98

EP - 102

JO - Korean Journal of Materials Research

JF - Korean Journal of Materials Research

IS - 2

ER -

Fabrication and characterization of direct-patternable PZT film prepared by photochemical metal-organic deposition

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