Fabrication and characterization of GaN/amorphous Ga2O3 nanocables through thermal oxidation

Ji Hyuk Choi, Moon Ho Ham, Woong Lee, Jae Min Myoung

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14 Citations (Scopus)

Abstract

In an effort to obtain one-dimensional core/shell nanostructures, thermal oxidation behavior of GaN nanowires in O2 with N2 ambients was investigated by x-ray diffraction, transmission electron microscopy, and x-ray photoelectron spectroscopy. Crystallinity and chemical bonding states of the oxidized surface in the GaN nanowires were strongly dependent on the oxidation temperature. Chemical oxidation reaction occurred upon increasing the temperature, accompanied by the formation of an amorphous Ga2O3 layer at the GaN nanowire surface at 900 {ring operator}C. The XPS analyses provided further evidence supporting the change in the chemical bonding states with increasing oxidation temperature.

Original languageEnglish
Pages (from-to)437-440
Number of pages4
JournalSolid State Communications
Volume142
Issue number8
DOIs
Publication statusPublished - 2007 May

Bibliographical note

Funding Information:
This research was supported by the Ministry of Information and Communication (MIC), Korea, under the Information Technology Research Center (ITRC) support program supervised by the Institute of Information Technology Assessment (IITA).

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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