Fabrication and characterization of GaN/amorphous Ga2O3 nanocables through thermal oxidation

Ji Hyuk Choi; Moon Ho Ham; Woong Lee; Jae Min Myoung

doi:10.1016/j.ssc.2007.03.034

Fabrication and characterization of GaN/amorphous Ga₂O₃ nanocables through thermal oxidation

Ji Hyuk Choi, Moon Ho Ham, Woong Lee, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

In an effort to obtain one-dimensional core/shell nanostructures, thermal oxidation behavior of GaN nanowires in O₂ with N₂ ambients was investigated by x-ray diffraction, transmission electron microscopy, and x-ray photoelectron spectroscopy. Crystallinity and chemical bonding states of the oxidized surface in the GaN nanowires were strongly dependent on the oxidation temperature. Chemical oxidation reaction occurred upon increasing the temperature, accompanied by the formation of an amorphous Ga₂O₃ layer at the GaN nanowire surface at 900 ^{{ring operator}}C. The XPS analyses provided further evidence supporting the change in the chemical bonding states with increasing oxidation temperature.

Original language	English
Pages (from-to)	437-440
Number of pages	4
Journal	Solid State Communications
Volume	142
Issue number	8
DOIs	https://doi.org/10.1016/j.ssc.2007.03.034
Publication status	Published - 2007 May

Bibliographical note

Funding Information:
This research was supported by the Ministry of Information and Communication (MIC), Korea, under the Information Technology Research Center (ITRC) support program supervised by the Institute of Information Technology Assessment (IITA).

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/j.ssc.2007.03.034

Cite this

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title = "Fabrication and characterization of GaN/amorphous Ga2O3 nanocables through thermal oxidation",

abstract = "In an effort to obtain one-dimensional core/shell nanostructures, thermal oxidation behavior of GaN nanowires in O2 with N2 ambients was investigated by x-ray diffraction, transmission electron microscopy, and x-ray photoelectron spectroscopy. Crystallinity and chemical bonding states of the oxidized surface in the GaN nanowires were strongly dependent on the oxidation temperature. Chemical oxidation reaction occurred upon increasing the temperature, accompanied by the formation of an amorphous Ga2O3 layer at the GaN nanowire surface at 900 {ring operator}C. The XPS analyses provided further evidence supporting the change in the chemical bonding states with increasing oxidation temperature.",

author = "Choi, {Ji Hyuk} and Ham, {Moon Ho} and Woong Lee and Myoung, {Jae Min}",

note = "Funding Information: This research was supported by the Ministry of Information and Communication (MIC), Korea, under the Information Technology Research Center (ITRC) support program supervised by the Institute of Information Technology Assessment (IITA).",

year = "2007",

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doi = "10.1016/j.ssc.2007.03.034",

language = "English",

volume = "142",

pages = "437--440",

journal = "Solid State Communications",

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T1 - Fabrication and characterization of GaN/amorphous Ga2O3 nanocables through thermal oxidation

AU - Choi, Ji Hyuk

AU - Ham, Moon Ho

AU - Lee, Woong

AU - Myoung, Jae Min

N1 - Funding Information: This research was supported by the Ministry of Information and Communication (MIC), Korea, under the Information Technology Research Center (ITRC) support program supervised by the Institute of Information Technology Assessment (IITA).

PY - 2007/5

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AB - In an effort to obtain one-dimensional core/shell nanostructures, thermal oxidation behavior of GaN nanowires in O2 with N2 ambients was investigated by x-ray diffraction, transmission electron microscopy, and x-ray photoelectron spectroscopy. Crystallinity and chemical bonding states of the oxidized surface in the GaN nanowires were strongly dependent on the oxidation temperature. Chemical oxidation reaction occurred upon increasing the temperature, accompanied by the formation of an amorphous Ga2O3 layer at the GaN nanowire surface at 900 {ring operator}C. The XPS analyses provided further evidence supporting the change in the chemical bonding states with increasing oxidation temperature.

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