Fabrication and characterization of La2Ti2O 7 films for ferroelectric-gate field effect transistor applications

Woo Sik Kim, Su Min Ha, Jun Kyu Yang, Hyung Ho Park

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


For applying ferroelectric material to nonvolatile active memory element in ferroelectric field effect devices, La 2 Ti 2 O 7 films on CeO 2 /Si (100) were attained at 650C using rapid thermal annealing process followed by each coating step. The crystalline property of the film as annealing temperature was characterized by X-ray diffraction C-V characteristics were measured to investigate the ferroelectric memory. As a result, the memory windows were in the range of 0.4V to 2.1V when the applied voltage varied from 3V to 9V. However, the final annealing temperature increased, the memory window decreases due to the formation of complex oxide layer underneath CeO 2.

Original languageEnglish
Pages (from-to)333-339
Number of pages7
Publication statusPublished - 2002 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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