Fabrication and characterization of La2Ti2O 7 films for ferroelectric-gate field effect transistor applications

Woo Sik Kim, Su Min Ha, Jun Kyu Yang, Hyung-Ho Park

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

For applying ferroelectric material to nonvolatile active memory element in ferroelectric field effect devices, La 2 Ti 2 O 7 films on CeO 2 /Si (100) were attained at 650C using rapid thermal annealing process followed by each coating step. The crystalline property of the film as annealing temperature was characterized by X-ray diffraction C-V characteristics were measured to investigate the ferroelectric memory. As a result, the memory windows were in the range of 0.4V to 2.1V when the applied voltage varied from 3V to 9V. However, the final annealing temperature increased, the memory window decreases due to the formation of complex oxide layer underneath CeO 2.

Original languageEnglish
Pages (from-to)333-339
Number of pages7
JournalFerroelectrics
Volume271
DOIs
Publication statusPublished - 2002 Jan 1

Fingerprint

Gates (transistor)
Ferroelectric materials
field effect transistors
Data storage equipment
Fabrication
fabrication
annealing
Annealing
ferroelectric materials
Rapid thermal annealing
Oxides
Crystalline materials
coatings
X ray diffraction
Coatings
Temperature
temperature
oxides
Electric potential
electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

@article{66ec241cf7c54cfea27d1eebd477caf7,
title = "Fabrication and characterization of La2Ti2O 7 films for ferroelectric-gate field effect transistor applications",
abstract = "For applying ferroelectric material to nonvolatile active memory element in ferroelectric field effect devices, La 2 Ti 2 O 7 films on CeO 2 /Si (100) were attained at 650C using rapid thermal annealing process followed by each coating step. The crystalline property of the film as annealing temperature was characterized by X-ray diffraction C-V characteristics were measured to investigate the ferroelectric memory. As a result, the memory windows were in the range of 0.4V to 2.1V when the applied voltage varied from 3V to 9V. However, the final annealing temperature increased, the memory window decreases due to the formation of complex oxide layer underneath CeO 2.",
author = "Kim, {Woo Sik} and Ha, {Su Min} and Yang, {Jun Kyu} and Hyung-Ho Park",
year = "2002",
month = "1",
day = "1",
doi = "10.1080/713716159",
language = "English",
volume = "271",
pages = "333--339",
journal = "Ferroelectrics",
issn = "0015-0193",
publisher = "Taylor and Francis Ltd.",

}

Fabrication and characterization of La2Ti2O 7 films for ferroelectric-gate field effect transistor applications. / Kim, Woo Sik; Ha, Su Min; Yang, Jun Kyu; Park, Hyung-Ho.

In: Ferroelectrics, Vol. 271, 01.01.2002, p. 333-339.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Fabrication and characterization of La2Ti2O 7 films for ferroelectric-gate field effect transistor applications

AU - Kim, Woo Sik

AU - Ha, Su Min

AU - Yang, Jun Kyu

AU - Park, Hyung-Ho

PY - 2002/1/1

Y1 - 2002/1/1

N2 - For applying ferroelectric material to nonvolatile active memory element in ferroelectric field effect devices, La 2 Ti 2 O 7 films on CeO 2 /Si (100) were attained at 650C using rapid thermal annealing process followed by each coating step. The crystalline property of the film as annealing temperature was characterized by X-ray diffraction C-V characteristics were measured to investigate the ferroelectric memory. As a result, the memory windows were in the range of 0.4V to 2.1V when the applied voltage varied from 3V to 9V. However, the final annealing temperature increased, the memory window decreases due to the formation of complex oxide layer underneath CeO 2.

AB - For applying ferroelectric material to nonvolatile active memory element in ferroelectric field effect devices, La 2 Ti 2 O 7 films on CeO 2 /Si (100) were attained at 650C using rapid thermal annealing process followed by each coating step. The crystalline property of the film as annealing temperature was characterized by X-ray diffraction C-V characteristics were measured to investigate the ferroelectric memory. As a result, the memory windows were in the range of 0.4V to 2.1V when the applied voltage varied from 3V to 9V. However, the final annealing temperature increased, the memory window decreases due to the formation of complex oxide layer underneath CeO 2.

UR - http://www.scopus.com/inward/record.url?scp=0011934617&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0011934617&partnerID=8YFLogxK

U2 - 10.1080/713716159

DO - 10.1080/713716159

M3 - Article

VL - 271

SP - 333

EP - 339

JO - Ferroelectrics

JF - Ferroelectrics

SN - 0015-0193

ER -