Fabrication and characterization of low temperature polycrystalline silicon thin film transistors by ink-jet printed nickel-mediated lateral crystallization

Jang Sik Lee, Min Sun Kim, Dongjo Kim, Yong Mu Kim, Jooho Moon, Seung Ki Joo

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High-performance polycrystalline silicon thin film transistors (poly-Si TFTs) were fabricated by using ink-jet printed nickel on large area glass substrates. Direct-printed Ni dots were used as a catalyst to crystallize the amorphous silicon into poly-Si for use in the channel region of TFT devices by metal-induced lateral crystallization. The fabricated poly-Si TFTs showed high field-effect mobility and on-off ratio that are comparable to the TFTs prepared using conventional semiconductor processes. The method presented here is a combination of bottom-up and top-down approaches and has a potential to be used in next generation high-performance poly-Si TFT fabrication.

Original languageEnglish
Article number122105
JournalApplied Physics Letters
Issue number12
Publication statusPublished - 2009 Apr 7


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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