Fabrication and characterization of low temperature polycrystalline silicon thin film transistors by ink-jet printed nickel-mediated lateral crystallization

Jang Sik Lee, Min Sun Kim, Dongjo Kim, Yong Mu Kim, Joo Ho Moon, Seung Ki Joo

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

High-performance polycrystalline silicon thin film transistors (poly-Si TFTs) were fabricated by using ink-jet printed nickel on large area glass substrates. Direct-printed Ni dots were used as a catalyst to crystallize the amorphous silicon into poly-Si for use in the channel region of TFT devices by metal-induced lateral crystallization. The fabricated poly-Si TFTs showed high field-effect mobility and on-off ratio that are comparable to the TFTs prepared using conventional semiconductor processes. The method presented here is a combination of bottom-up and top-down approaches and has a potential to be used in next generation high-performance poly-Si TFT fabrication.

Original languageEnglish
Article number122105
JournalApplied Physics Letters
Volume94
Issue number12
DOIs
Publication statusPublished - 2009 Apr 7

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inks
transistors
nickel
crystallization
fabrication
silicon
thin films
amorphous silicon
catalysts
glass
metals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "High-performance polycrystalline silicon thin film transistors (poly-Si TFTs) were fabricated by using ink-jet printed nickel on large area glass substrates. Direct-printed Ni dots were used as a catalyst to crystallize the amorphous silicon into poly-Si for use in the channel region of TFT devices by metal-induced lateral crystallization. The fabricated poly-Si TFTs showed high field-effect mobility and on-off ratio that are comparable to the TFTs prepared using conventional semiconductor processes. The method presented here is a combination of bottom-up and top-down approaches and has a potential to be used in next generation high-performance poly-Si TFT fabrication.",
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Fabrication and characterization of low temperature polycrystalline silicon thin film transistors by ink-jet printed nickel-mediated lateral crystallization. / Lee, Jang Sik; Kim, Min Sun; Kim, Dongjo; Kim, Yong Mu; Moon, Joo Ho; Joo, Seung Ki.

In: Applied Physics Letters, Vol. 94, No. 12, 122105, 07.04.2009.

Research output: Contribution to journalArticle

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