High-performance polycrystalline silicon thin film transistors (poly-Si TFTs) were fabricated by using ink-jet printed nickel on large area glass substrates. Direct-printed Ni dots were used as a catalyst to crystallize the amorphous silicon into poly-Si for use in the channel region of TFT devices by metal-induced lateral crystallization. The fabricated poly-Si TFTs showed high field-effect mobility and on-off ratio that are comparable to the TFTs prepared using conventional semiconductor processes. The method presented here is a combination of bottom-up and top-down approaches and has a potential to be used in next generation high-performance poly-Si TFT fabrication.
Bibliographical noteFunding Information:
This work was supported by the CMPS (Grant No. R11–2005–048–00000-0) under the auspices of the ERC program of MEST/KOSEF, by “SystemIC2010” project of MKE, by the KOSEF grant funded by the Korea Government (MEST) (Grant No. R01–2008–000–11994-0), and by the KRF grant funded by the Korea Government (MEST) (Grant No. KRF-2008-313–D00597). In addition, J.M. acknowledges the support by the NRL Program of the KOSEF/MEST (Grant No. R0A-2005-000–10011-0).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)