Fabrication and characterization of monolithic piezoresistive high-g three-axis accelerometer

Han Il Jung; Dae Sung Kwon; Jongbaeg Kim

doi:10.1186/s40486-016-0041-7

Fabrication and characterization of monolithic piezoresistive high-g three-axis accelerometer

Han Il Jung, Dae Sung Kwon, Jongbaeg Kim

Department of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We report piezoresistive high-g three-axis accelerometer with a single proof mass suspended by thin eight beams. This eight-beam design allows load-sharing at high-g preventing structural breakage, as well as the symmetric arrangement of piezoresistors. The device chip size is 1.4 mm × 1.4 mm × 0.51 mm. Experimental results show that the sensitivity in X-, Y- and Z-axes are 0.2433, 0.1308 and 0.3068 mV/g/V under 5 V applied and the resolutions are 24.2, 29.9 and 25.4 g, respectively.

Original language	English
Article number	7
Journal	Micro and Nano Systems Letters
Volume	5
Issue number	1
DOIs	https://doi.org/10.1186/s40486-016-0041-7
Publication status	Published - 2017 Dec 1

Bibliographical note

Funding Information:
This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and future Planning (NRF‑2015R1A2A1A01005496) and LG Electronics.

Publisher Copyright:
© 2017, The Author(s).

All Science Journal Classification (ASJC) codes

Biomaterials
Biomedical Engineering

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@article{598878c5847b4492a68565594ca9823b,

title = "Fabrication and characterization of monolithic piezoresistive high-g three-axis accelerometer",

abstract = "We report piezoresistive high-g three-axis accelerometer with a single proof mass suspended by thin eight beams. This eight-beam design allows load-sharing at high-g preventing structural breakage, as well as the symmetric arrangement of piezoresistors. The device chip size is 1.4 mm × 1.4 mm × 0.51 mm. Experimental results show that the sensitivity in X-, Y- and Z-axes are 0.2433, 0.1308 and 0.3068 mV/g/V under 5 V applied and the resolutions are 24.2, 29.9 and 25.4 g, respectively.",

author = "Jung, {Han Il} and Kwon, {Dae Sung} and Jongbaeg Kim",

note = "Funding Information: This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and future Planning (NRF‑2015R1A2A1A01005496) and LG Electronics. Publisher Copyright: {\textcopyright} 2017, The Author(s).",

year = "2017",

month = dec,

day = "1",

doi = "10.1186/s40486-016-0041-7",

language = "English",

volume = "5",

journal = "Micro and Nano Systems Letters",

issn = "2213-9621",

publisher = "Springer Open",

number = "1",

}

TY - JOUR

T1 - Fabrication and characterization of monolithic piezoresistive high-g three-axis accelerometer

AU - Jung, Han Il

AU - Kwon, Dae Sung

AU - Kim, Jongbaeg

N1 - Funding Information: This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and future Planning (NRF‑2015R1A2A1A01005496) and LG Electronics. Publisher Copyright: © 2017, The Author(s).

PY - 2017/12/1

Y1 - 2017/12/1

N2 - We report piezoresistive high-g three-axis accelerometer with a single proof mass suspended by thin eight beams. This eight-beam design allows load-sharing at high-g preventing structural breakage, as well as the symmetric arrangement of piezoresistors. The device chip size is 1.4 mm × 1.4 mm × 0.51 mm. Experimental results show that the sensitivity in X-, Y- and Z-axes are 0.2433, 0.1308 and 0.3068 mV/g/V under 5 V applied and the resolutions are 24.2, 29.9 and 25.4 g, respectively.

AB - We report piezoresistive high-g three-axis accelerometer with a single proof mass suspended by thin eight beams. This eight-beam design allows load-sharing at high-g preventing structural breakage, as well as the symmetric arrangement of piezoresistors. The device chip size is 1.4 mm × 1.4 mm × 0.51 mm. Experimental results show that the sensitivity in X-, Y- and Z-axes are 0.2433, 0.1308 and 0.3068 mV/g/V under 5 V applied and the resolutions are 24.2, 29.9 and 25.4 g, respectively.

UR - http://www.scopus.com/inward/record.url?scp=85047613815&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85047613815&partnerID=8YFLogxK

U2 - 10.1186/s40486-016-0041-7

DO - 10.1186/s40486-016-0041-7

M3 - Article

AN - SCOPUS:85047613815

VL - 5

JO - Micro and Nano Systems Letters

JF - Micro and Nano Systems Letters

SN - 2213-9621

IS - 1

M1 - 7

ER -

Fabrication and characterization of monolithic piezoresistive high-g three-axis accelerometer

Abstract

Bibliographical note

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