Fabrication and characterization of Nd2Ti2O 7 for ferroelectric field effect transistor

Woo Sik Kim, Min Gu Kang, Jun Kyu Yang, Hyung Ho Park

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

Ferroelectric field effect devices offer the possibility of nonvolatile active memory elements. In the metal-ferroelectric-insulator-semiconductor field effect transistor, it is important for a ferroelectric material to have a low dielectric constant to enable the application of sufficient electric field to a ferroelectric film. In this work, Nd2Ti2O7 (NTO) films on CeO2/Si (100) were attained by sol-gel process. The crystalline property of the film according to annealing temperature was characterized by X-ray diffraction. C-V characteristics were measured to investigate the ferroelectric memory effects by HP4284A LCR meter at 1MHz with a bias sweep rate of 0.18V/s. As a result, the crystalline of NTO thin film on CeO2/Si(100) was developed from 700°C and perfect crystalline phase was obtained at 1000°C. The memory windows were in the range of 0.2 to 2.5 V when the applied voltage varied from 3 to 9 V. And, the fact that C-V loops were caused by the ferroelectricity of NTO was confirmed by P-E characterization of Au/NTO/Pt structure.

Original languageEnglish
Pages (from-to)299-304
Number of pages6
JournalFerroelectrics
Volume259
Issue number1
DOIs
Publication statusPublished - 2001 Dec 1
Event3rd Asian Meeting on Ferroelectrics, AMF-3 - Hong Kong, China
Duration: 2002 Dec 122002 Dec 15

Fingerprint

Field effect transistors
Ferroelectric materials
field effect transistors
Fabrication
fabrication
Crystalline materials
Data storage equipment
ferroelectric materials
ferroelectricity
sol-gel processes
Ferroelectric films
Ferroelectricity
insulators
Chemical elements
permittivity
Sol-gel process
annealing
Permittivity
electric fields
Metals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Kim, Woo Sik ; Kang, Min Gu ; Yang, Jun Kyu ; Park, Hyung Ho. / Fabrication and characterization of Nd2Ti2O 7 for ferroelectric field effect transistor. In: Ferroelectrics. 2001 ; Vol. 259, No. 1. pp. 299-304.
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Fabrication and characterization of Nd2Ti2O 7 for ferroelectric field effect transistor. / Kim, Woo Sik; Kang, Min Gu; Yang, Jun Kyu; Park, Hyung Ho.

In: Ferroelectrics, Vol. 259, No. 1, 01.12.2001, p. 299-304.

Research output: Contribution to journalConference article

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