Fabrication and characterization of Nd₂Ti₂O ₇ for ferroelectric field effect transistor

Engineering & Materials Science

• Ferroelectric materials 82%
• Field effect transistors 67%
• Crystalline materials 49%
• Fabrication 46%
• Cerium oxide 39%
• Ferroelectricity 29%
• Ferroelectric films 28%
• Data storage equipment 28%
• Sol-gel process 21%
• Permittivity 15%
• Annealing 15%
• X ray diffraction 15%
• Thin films 14%
• Electric fields 14%
• Semiconductor materials 13%
• Metals 10%
• Electric potential 8%
• Temperature 6%

Chemistry

• Point Group C∞V 100%
• Field Effect 62%
• Ferroelectric Film 54%
• Memory Effect 40%
• Liquid Film 30%
• Dielectric Constant 28%
• Electric Field 28%
• Sol Gel Process 25%
• Annealing 24%
• Voltage 22%
• X-Ray Diffraction 15%
• Application 9%

Physics & Astronomy

• field effect transistors 49%
• fabrication 38%
• characterization 34%
• sol-gel processes 24%
• ferroelectric materials 24%
• ferroelectricity 24%
• insulators 15%
• permittivity 14%
• annealing 12%
• electric fields 12%
• electric potential 11%
• diffraction 11%
• thin films 10%
• metals 10%
• x rays 9%
• temperature 6%