Abstract
Vertical aligned p-Si nanowires were fabricated by electroless wet chemical etching of Si wafer. p-Si nanowires/ZnO thin film heterojunction diode was fabricated by depositing ZnO thin film on vertically aligned p-Si nanowire arrays. Optical studies revealed that the Si nanowire surface has porous silicon like structure. The junction properties were evaluated by measuring I-V and C-V characteristics. I-V characteristics exhibited well defined rectifying behavior with a turn-on voltage of 2.26 V and ideality factor of 4.5.
| Original language | English |
|---|---|
| Pages (from-to) | 1582-1585 |
| Number of pages | 4 |
| Journal | Solid-State Electronics |
| Volume | 54 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2010 Dec 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Choi, J. H., Das, S. N., Moon, K. J., Kar, J. P., & Myoung, J. M. (2010). Fabrication and characterization of p-Si nanowires/ZnO film heterojunction diode. Solid-State Electronics, 54(12), 1582-1585. https://doi.org/10.1016/j.sse.2010.07.015