Abstract
Vertical aligned p-Si nanowires were fabricated by electroless wet chemical etching of Si wafer. p-Si nanowires/ZnO thin film heterojunction diode was fabricated by depositing ZnO thin film on vertically aligned p-Si nanowire arrays. Optical studies revealed that the Si nanowire surface has porous silicon like structure. The junction properties were evaluated by measuring I-V and C-V characteristics. I-V characteristics exhibited well defined rectifying behavior with a turn-on voltage of 2.26 V and ideality factor of 4.5.
| Original language | English |
|---|---|
| Pages (from-to) | 1582-1585 |
| Number of pages | 4 |
| Journal | Solid-State Electronics |
| Volume | 54 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2010 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
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Fabrication and characterization of p-Si nanowires/ZnO film heterojunction diode. / Choi, Ji Hyuk; Das, Sachindra Nath; Moon, Kyeong Ju; Kar, Jyoti Prakash; Myoung, Jae Min.
In: Solid-State Electronics, Vol. 54, No. 12, 01.12.2010, p. 1582-1585.Research output: Contribution to journal › Article
TY - JOUR
T1 - Fabrication and characterization of p-Si nanowires/ZnO film heterojunction diode
AU - Choi, Ji Hyuk
AU - Das, Sachindra Nath
AU - Moon, Kyeong Ju
AU - Kar, Jyoti Prakash
AU - Myoung, Jae Min
PY - 2010/12/1
Y1 - 2010/12/1
N2 - Vertical aligned p-Si nanowires were fabricated by electroless wet chemical etching of Si wafer. p-Si nanowires/ZnO thin film heterojunction diode was fabricated by depositing ZnO thin film on vertically aligned p-Si nanowire arrays. Optical studies revealed that the Si nanowire surface has porous silicon like structure. The junction properties were evaluated by measuring I-V and C-V characteristics. I-V characteristics exhibited well defined rectifying behavior with a turn-on voltage of 2.26 V and ideality factor of 4.5.
AB - Vertical aligned p-Si nanowires were fabricated by electroless wet chemical etching of Si wafer. p-Si nanowires/ZnO thin film heterojunction diode was fabricated by depositing ZnO thin film on vertically aligned p-Si nanowire arrays. Optical studies revealed that the Si nanowire surface has porous silicon like structure. The junction properties were evaluated by measuring I-V and C-V characteristics. I-V characteristics exhibited well defined rectifying behavior with a turn-on voltage of 2.26 V and ideality factor of 4.5.
UR - http://www.scopus.com/inward/record.url?scp=77957300406&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77957300406&partnerID=8YFLogxK
U2 - 10.1016/j.sse.2010.07.015
DO - 10.1016/j.sse.2010.07.015
M3 - Article
AN - SCOPUS:77957300406
VL - 54
SP - 1582
EP - 1585
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 12
ER -