Fabrication and characterization of p-Si nanowires/ZnO film heterojunction diode

Ji Hyuk Choi, Sachindra Nath Das, Kyeong Ju Moon, Jyoti Prakash Kar, Jae Min Myoung

Research output: Contribution to journalArticle

32 Citations (Scopus)


Vertical aligned p-Si nanowires were fabricated by electroless wet chemical etching of Si wafer. p-Si nanowires/ZnO thin film heterojunction diode was fabricated by depositing ZnO thin film on vertically aligned p-Si nanowire arrays. Optical studies revealed that the Si nanowire surface has porous silicon like structure. The junction properties were evaluated by measuring I-V and C-V characteristics. I-V characteristics exhibited well defined rectifying behavior with a turn-on voltage of 2.26 V and ideality factor of 4.5.

Original languageEnglish
Pages (from-to)1582-1585
Number of pages4
JournalSolid-State Electronics
Issue number12
Publication statusPublished - 2010 Dec 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Fabrication and characterization of p-Si nanowires/ZnO film heterojunction diode'. Together they form a unique fingerprint.

  • Cite this