Fabrication and characterization of p-Si nanowires/ZnO film heterojunction diode

Ji Hyuk Choi; Sachindra Nath Das; Kyeong Ju Moon; Jyoti Prakash Kar; Jae Min Myoung

doi:10.1016/j.sse.2010.07.015

Fabrication and characterization of p-Si nanowires/ZnO film heterojunction diode

Ji Hyuk Choi, Sachindra Nath Das, Kyeong Ju Moon, Jyoti Prakash Kar, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

Vertical aligned p-Si nanowires were fabricated by electroless wet chemical etching of Si wafer. p-Si nanowires/ZnO thin film heterojunction diode was fabricated by depositing ZnO thin film on vertically aligned p-Si nanowire arrays. Optical studies revealed that the Si nanowire surface has porous silicon like structure. The junction properties were evaluated by measuring I-V and C-V characteristics. I-V characteristics exhibited well defined rectifying behavior with a turn-on voltage of 2.26 V and ideality factor of 4.5.

Original language	English
Pages (from-to)	1582-1585
Number of pages	4
Journal	Solid-State Electronics
Volume	54
Issue number	12
DOIs	https://doi.org/10.1016/j.sse.2010.07.015
Publication status	Published - 2010 Dec

Bibliographical note

Funding Information:
This work was supported by the IT R&D program of MKE/IITA (2008-F-023-01) and by the IT R&D program of MKE/KEIT (10030559, Development of next generation high performance organic/nano materials and printing process technology).

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Fabrication and characterization of p-Si nanowires/ZnO film heterojunction diode",

abstract = "Vertical aligned p-Si nanowires were fabricated by electroless wet chemical etching of Si wafer. p-Si nanowires/ZnO thin film heterojunction diode was fabricated by depositing ZnO thin film on vertically aligned p-Si nanowire arrays. Optical studies revealed that the Si nanowire surface has porous silicon like structure. The junction properties were evaluated by measuring I-V and C-V characteristics. I-V characteristics exhibited well defined rectifying behavior with a turn-on voltage of 2.26 V and ideality factor of 4.5.",

author = "Choi, {Ji Hyuk} and Das, {Sachindra Nath} and Moon, {Kyeong Ju} and Kar, {Jyoti Prakash} and Myoung, {Jae Min}",

note = "Funding Information: This work was supported by the IT R&D program of MKE/IITA (2008-F-023-01) and by the IT R&D program of MKE/KEIT (10030559, Development of next generation high performance organic/nano materials and printing process technology).",

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AU - Choi, Ji Hyuk

AU - Das, Sachindra Nath

AU - Moon, Kyeong Ju

AU - Kar, Jyoti Prakash

AU - Myoung, Jae Min

N1 - Funding Information: This work was supported by the IT R&D program of MKE/IITA (2008-F-023-01) and by the IT R&D program of MKE/KEIT (10030559, Development of next generation high performance organic/nano materials and printing process technology).

PY - 2010/12

Y1 - 2010/12

N2 - Vertical aligned p-Si nanowires were fabricated by electroless wet chemical etching of Si wafer. p-Si nanowires/ZnO thin film heterojunction diode was fabricated by depositing ZnO thin film on vertically aligned p-Si nanowire arrays. Optical studies revealed that the Si nanowire surface has porous silicon like structure. The junction properties were evaluated by measuring I-V and C-V characteristics. I-V characteristics exhibited well defined rectifying behavior with a turn-on voltage of 2.26 V and ideality factor of 4.5.

AB - Vertical aligned p-Si nanowires were fabricated by electroless wet chemical etching of Si wafer. p-Si nanowires/ZnO thin film heterojunction diode was fabricated by depositing ZnO thin film on vertically aligned p-Si nanowire arrays. Optical studies revealed that the Si nanowire surface has porous silicon like structure. The junction properties were evaluated by measuring I-V and C-V characteristics. I-V characteristics exhibited well defined rectifying behavior with a turn-on voltage of 2.26 V and ideality factor of 4.5.

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Fabrication and characterization of p-Si nanowires/ZnO film heterojunction diode

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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