Fabrication and characterization of p-Si nanowires/ZnO film heterojunction diode

Ji Hyuk Choi, Sachindra Nath Das, Kyeong Ju Moon, Jyoti Prakash Kar, Jae Min Myoung

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Vertical aligned p-Si nanowires were fabricated by electroless wet chemical etching of Si wafer. p-Si nanowires/ZnO thin film heterojunction diode was fabricated by depositing ZnO thin film on vertically aligned p-Si nanowire arrays. Optical studies revealed that the Si nanowire surface has porous silicon like structure. The junction properties were evaluated by measuring I-V and C-V characteristics. I-V characteristics exhibited well defined rectifying behavior with a turn-on voltage of 2.26 V and ideality factor of 4.5.

Original languageEnglish
Pages (from-to)1582-1585
Number of pages4
JournalSolid-State Electronics
Volume54
Issue number12
DOIs
Publication statusPublished - 2010 Dec 1

Fingerprint

Nanowires
Heterojunctions
heterojunctions
Diodes
nanowires
diodes
Fabrication
fabrication
Thin films
Wet etching
Porous silicon
thin films
porous silicon
etching
wafers
Electric potential
electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Choi, Ji Hyuk ; Das, Sachindra Nath ; Moon, Kyeong Ju ; Kar, Jyoti Prakash ; Myoung, Jae Min. / Fabrication and characterization of p-Si nanowires/ZnO film heterojunction diode. In: Solid-State Electronics. 2010 ; Vol. 54, No. 12. pp. 1582-1585.
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Fabrication and characterization of p-Si nanowires/ZnO film heterojunction diode. / Choi, Ji Hyuk; Das, Sachindra Nath; Moon, Kyeong Ju; Kar, Jyoti Prakash; Myoung, Jae Min.

In: Solid-State Electronics, Vol. 54, No. 12, 01.12.2010, p. 1582-1585.

Research output: Contribution to journalArticle

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AU - Myoung, Jae Min

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